K4T51083QC-ZC(L)E7 (Samsung) - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 16Mbit x 8 I/Os x 4banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of, DDR SDRAM (512 Мб)

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K4T51083QC-ZC(L)E7 (Samsung)

Подробное описание (datasheet) электронного компонента «K4T51083QC-ZC(L)E7» (DDR SDRAM (512 Мб)), производства Samsung. Выберите наиболее удобный формат.

Datasheet K4T51083QC-ZC(L)E7 производства Samsung

Маркировка	K4T51083QC-ZC(L)E7
Описание	512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 16Mbit x 8 I/Os x 4banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
Функционал	DDR SDRAM (512 Мб)
Производитель	Samsung semiconductor
Сайт	www.samsung.com

Размер	Страниц: 29, 630.07Кб
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В этом файле

K4T51043QC, K4T51043QC-ZC(L)E7, K4T51083QC-ZC(L)E7, K4T51163QC, K4T51163QC-ZC(L)E7

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