K4T1G084QA-ZCCC0 (Samsung) - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr, DDR SDRAM (1 Гб)

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K4T1G084QA-ZCCC0 (Samsung)

Подробное описание (datasheet) электронного компонента «K4T1G084QA-ZCCC0» (DDR SDRAM (1 Гб)), производства Samsung. Выберите наиболее удобный формат.

Datasheet K4T1G084QA-ZCCC0 производства Samsung

Маркировка	K4T1G084QA-ZCCC0
Описание	1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
Функционал	DDR SDRAM (1 Гб)
Производитель	Samsung semiconductor
Сайт	www.samsung.com

Размер	Страниц: 28, 612Кб
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