K4S561633F-X(Z)E/N/G/C/L/F75 (Samsung) - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high, SDR SDRAM (256 Мб)

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K4S561633F-X(Z)E/N/G/C/L/F75 (Samsung)

Подробное описание (datasheet) электронного компонента «K4S561633F-X(Z)E/N/G/C/L/F75» (SDR SDRAM (256 Мб)), производства Samsung. Выберите наиболее удобный формат.

Datasheet K4S561633F-X(Z)E/N/G/C/L/F75 производства Samsung

Маркировка	K4S561633F-X(Z)E/N/G/C/L/F75
Описание	4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
Функционал	SDR SDRAM (256 Мб)
Производитель	Samsung semiconductor
Сайт	www.samsung.com

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K4S561633F-X(Z)E/N/G/C/L/F1H, K4S561633F-X(Z)E/N/G/C/L/F1L, K4S561633F-X(Z)E/N/G/C/L/F75

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