MW4IC2020 - Rf Ldmos Wideband Integrated Power Amplifiers
MW4IC2020D - RF LDMOS Wideband Integrated Power Amplifiers
MW4IC2020GMBR1 - RF LDMOS Wideband Integrated Power Amplifiers
MW4IC2020MBR1 - RF LDMOS Wideband Integrated Power Amplifiers
MW4IC2230 - Rf Ldmos Wideband Integrated Power Amplifiers
MW4IC2230GMBR1 - RF LDMOS Wideband Integrated Power Amplifiers
MW4IC2230MBR1 - RF LDMOS Wideband Integrated Power Amplifiers
MW4IC915GMBR1 - Rf Ldmos Wideband Integrated Power Amplifiers
MW4IC915GMBR1 - Rf Ldmos Wideband Integrated Power Amplifiers
MW4IC915GNBR1 - RF LDMOS Wideband Integrated Power Amplifiers
MW4IC915MBR1 - RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
MW4IC915MBR1 - RF LDMOS Wideband Integrated Power Amplifiers
MW4IC915NBR1 - RF LDMOS Wideband Integrated Power Amplifiers
MW5IC2030GMBR1 - Rf Ldmos Wideband Integrated Power Amplifiers
MW5IC2030MBR1 - RF LDMOS Wideband Integrated Power Amplifiers
MW5IC2030N - 1930–1990 MHz, 30 W, 26V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifiershe MW5IC2030NBR1 and MW5IC2030GNBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1930 to 1990 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.W5IC2030N Features Final Application * Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg
MW6IC2015N - 1805–1990 MHz, 15 W, 26V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015NBR1 and MW6IC2015GNBR1 wideband integrated circuits are designed for base station applications. They use Freescale\'s newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrateA multi–stage structure. Their wideband on-chip design make them usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA and W–CDM
MW6S010N - RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETsDesigned for ClassA or Class AB base station applications with frequenciesup to 1500 MHz. Suitable for analog and digital modulation and multicarrieramplifier applications.• Typical Two-Tone Performance at 960 MHz: VDD = 28 Volts, IDQ =125 mA, Pout = 10 Watts PEPPower Gain 18 dBDrain Efficiency 32%IMD -37 dBc• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CWOutput PowerFeatures• Characterized with Se