Zowie Technology Corporation
General Purpose Transistor
PNP Silicon
MMBT2907A
1
2
1
2
3
3
SOT-23
Rating
Unit
Characteristic
Collector-Emitter Voltage
Vdc
Collector-Base Voltage
Vdc
Emitter-Base Voltage
Vdc
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-60
-60
-5.0
-600
mAdc
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25
o
C
Derate above 25
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
o
C
Derate above 25
o
C
Thermal Resistance Junction to Ambient
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Emitter - Base Breakdowe Voltage
( I
E
= -10 uAdc, I
C
=0 )
Collector Cutoff Current
( V
CB
= -50 Vdc, I
E
=0 )
( V
CB
= -50 Vdc, I
E
=0, T
A
=125
o
C )
Collector-Emitter Breakdowe Voltage
(3)
( I
C
= -1.0mAdc, I
B=0
)
Unit
Vdc
Collector-Base Breakdowe Voltage
( I
C
= -10uAdc, I
E=0
)
Vdc
Vdc
uAdc
Collector Cutoff Current
( V
CE
= -30 Vdc, V
BE (off)
= -0.5 Vdc )
Symbol
V
(BR)EBO
V
(BR)CEO
I
CBO
I
B
V
(BR)CBO
I
CEX
Min.
-5.0
-60
-
-
-
-60
-
Max.
-
-
-0.010
-10
-50
-
-50
nAdc
nAdc
Base Cutoff Current ( V
CE
=60 V, V
EB
(off)
=3.0 Vdc )
MMBT2907A=2F
Max.
225
1.8
300
2.4
556
417
-55 to +150
Unit
mW
mW /
o
C
mW
mW /
o
C
o
C / W
o
C / W
o
C
Symbol
P
D
P
D
R
JA
R
JA
T
J,
T
STG
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Zowie Technology Corporation
Characteristic
Symbol
Min.
Max.
Unit
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted) (Continued)
H
FE
75
100
100
100
50
-
-
-
300
-
-
ON CHARACTERISTICS
V
CE
(sat)
Vdc
DC Current Gain
( I
C
= -0.1 mAdc, V
CE= -
10 Vdc )
( I
C
= -1.0 mAdc, V
CE= -
10 Vdc )
( I
C
= -10 mAdc, V
CE= -
10 Vdc )
( I
C
= -150 mAdc, V
CE= -
10 Vdc )
(3)
( I
C
= -500 mAdc, V
CE= -
10 Vdc )
(3)
Collector-Emitter Saturation Voltage
(3)
( I
C
= -150 mAdc, I
B
= -15 mAdc )
( I
C
= -500 mAdc, I
B
= -50 mAdc )
-
-
-0.4
-1.6
V
BE
(sat)
Vdc
Base-Emitter Saturation Voltage
(3)
( I
C
= -150 mAdc, I
B
= -15 mAdc )
( I
C
= -500 mAdc, I
B
= -50 mAdc )
-
-
-1.3
-2.6
f
T
C
obo
200
-
-
8.0
MH
Z
SMALL-SIGNAL CHARACTERISTIC
C
ibo
pF
pF
Current-Gain-Bandwidth Product
(3),(4)
( I
C
= -50 mAdc, V
CE
= -20 Vdc, f=100 MH
Z
)
Output Capacitance
( V
CB
= -10 Vdc, I
E
=0, f=1.0 MH
Z
)
Input Capacitance
( V
EB
= -2.0 Vdc, I
C
=0, f=1.0 MH
Z
)
-
30
td
ton
-
45
SWITCHING CHARACTERISTICS
toff
nS
Delay Time
Turn-On Time
Turn-On Time
-
10
tr
Rise Time
-
40
ts
nS
Storage Time
( V
CC
= -30 Vdc, I
C
= -150 mAdc,
I
B1
= -15 mAdc )
( V
CC
= -6.0 Vdc, I
C
= -150 mAdc,
I
B1
=I
B2= -
15 mAdc )
-
-
100
80
tf
Fall Time
-
30
Zowie Technology Corporation
REV. : 0
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
(2) fT is defined as the frequency at which hfe extrapolates to unity.
INPUT
Z
O
= 50
PRF = 150PPS
RISE TIME 2.0nS
P.W. < 200nS
0
0
-16V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME 5.0nS
+15 V
-6.0V
1.0 k
37
50
1N916
1.0 k
200 ns
-30 V
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
INPUT
Z
O
= 50
PRF = 150PPS
RISE TIME 2.0nS
P.W. < 200nS
TO OSCILLOSCOPE
RISE TIME 5.0nS
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBT2907A
Figure 4. Collector Saturation Region
I
B
, BASE CURRENT ( mA )
V
C
E
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
I
C
= 1.0 mA
-10 mA
-100 mA
-500 mA
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT ( mA )
h
F
E
,
N
O
R
M
A
L
I
Z
E
D
C
U
R
R
E
T
N
G
A
I
N
-1.0
0
-0.005
-0.01
-0.2
-0.5
-1.0
-2.0
-20
-50
-0.8
-0.4
-0.6
-0.2
-0.02
-0.05
-0.1
-10
-5.0
Figure 5. Turn - On Time
t
,
T
I
M
E
(
n
S
)
I
C
, COLLECTOR CURRENT
Figure 6. Turn - Off Time
I
C
, COLLECTOR CURRENT ( mA )
t
,
T
I
M
E
(
n
S
)
t
d
@
V
BE(off)
= 0V
t'
S
= t
S
- 1/8 t
f
t
r
t
f
2.0 V
0.3
0.5
0.7
1.0
3.0
0.2
-0.1
2.0
-0.2
-0.3
-0.5 -0.7
-1.0
-2.0
-3.0
-5.0 -7.0
-10
-20
-30
-50 -70 -100
-200
-300
-500
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25
o
C
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25
o
C
V
CE
= -10 V
TYPICAL CHARACTERISTICS
300
-5.0
200
100
70
50
30
20
10
7.0
5.0
3.0
-7.0 -10
-20
-30
-50 -70 -100
-200 -300
-500
-5.0
500
300
100
70
50
30
20
10
7.0
5.0
-7.0 -10
-20
-30
-50 -70 -100
-200 -300
-500
200
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBT2907A
Figure 7. Frequency Effects
f, FREQUENCY ( kHz )
Figure 9. Capacitances
Figure 10. Current-Gain Bandwidth Product
R
S
, SOURCE RESISTANCE ( OHMS )
N
F
,
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
N
F
,
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
REVERSE VOLTAGE ( VOLTS )
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
I
C
, COLLECTOR CURRENT ( mA )
Figure11. " On " Voltage
I
C
, COLLECTOR CURRENT ( mA )
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 12. Temperature Coefficients
I
C
, COLLECTOR CURRENT ( mA )
C
O
E
F
F
I
C
I
E
N
T
(
m
V
/
o
C
)
Figure 8. Source Resistance Effects
N
F
,
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
f=1.0kHz
C
eb
C
cb
T
J
= 25
o
C
V
CE
= -20 V
10
0.01
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
R
S
=OPTIMUM SOURCE RESISTANCE
I
C
= -1.0mA, R
S
=430
-500uA, R
S
=560
-50uA, R
S
=2.7k
-100uA, R
S
=1.6k
I
C
= -50 uA
-100 uA
-500 uA
-1.0 mA
10
8.0
6.0
4.0
2.0
0
50 100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k
30
-0.1
2.0
20
10
7.0
5.0
3.0
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
400
300
200
100
80
60
40
30
20
-1.0
-2.0
-5.0
-10
-20
-50
-100 -200
-500 -1000
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200
-500
T
J
= 25
o
C
V
BE(sat)
@ I
C/
I
B
= 10
V
CE(sat)
@ I
C/
I
B
= 10
V
BE(on)
@ I
CE
= -10V
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200 -500
R
VC
for V
CE
(sat)
R
VB
for V
BE
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