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Электронный компонент: LL4448

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LL4148, LL4448
SILICON EPITAXIAL PLANAR DIODES
Reverse Voltage 100 Volts Peak Forward Current - 500mA
SYMBOL
SYMBOL
Zowie Technology Corporation
REV. : 0
SOD-80
*Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS ( T
J
=25
o
C )
Repetitive Peak Reverse Voltage
Reverse Voltage
Peak Forward Surge Current
Repetitive Peak Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
MAXIMUM THERMAL RESISTANCE ( T
J
=25
o
C )
MAXIMUM THERMAL RESISTANCE ( T
J
=25
o
C )
Forward Voltage
Reverse Current
Breakdown Voltage
Diode Capacitance
Rectification Efficiency
Reverse Recovery Time
( I
F
= 5 mA )
( I
F
= 50 mA )
( I
F
= 100 mA )
( Type : LL4448 )
( Type : LL4148 )
( Type : LL4448 )
( V
R
= 20 V )
( V
R
= 20 V, T
J
=150
o
C )
( V
R
= 75 V )
-
-
-
-
-
-
25
50
5.0
( I
R
= 100 uA, tp/T = 0.01, tp = 0.3 ms )
( V
R
= 0, f=1.0MHz, V
HF
= 50mV )
( V
HF
= 2 V, f = 100MH
Z
)
( I
F
= I
R
= 10mA, I
R
= 1mA )
( I
F
= 10mA, V
R
= 6 V, I
R
= 0.1 X I
R
, R
L
= 100 )
V
RRM
V
R
I
FSM
tp = 1 us
V
R
= 0
I
FRM
P
V
T
STG
T
J
V
F
I
R
V
(BR)
C
D
r
t
rr
VALUE
100
75
2
500
UNIT
UNIT
UNIT
V
V
A
Forward Current
I
F
300
mA
mA
Average Forward Current
I
FAV
150
mA
500
175
-65 to +175
mW
o
C
o
C
MIN.
TYP.
0.62
-
-
-
0.86
0.93
nAdc
uAdc
100
-
Volts
-
-
-
-
MAX.
0.72
1.0
1.0
Volts
-
Junction Ambient
on PC Board 50mm x 50mm x 1.6mm
R
JA
500
K / W
4
45
-
-
8
4
-
-
pF
%
nS
PARAMETER
PARAMETER
Test Conditions
TEST CONDITIONS
SYMBOL
VALUE
PARAMETER
TEST CONDITIONS
FEATURES
MECHANICAL DATA
* Electrical data identical with the devices 1N4148
* and 1N4448 respectively
* Extreme fast switches
Case : Mini MELF SOD-80 Glass Case
Weight : approx. 0.05 gram
0.063(1.60)
Cathode Indification
technical drawings
accarding to DIN
specifications
Glass case
Mini MELF / SOD 80
JEDEC DO 213AA
0.055(1.40)
0.146(3.70)
0.130(3.30)
0.012(0.30)
RATINGS AND CHARACTERISTIC CURVES LL4148, LL4448
Zowie Technology Corporation
REV. : 0
FIG.1 - FORWARD CURRENT VS. FORWARD VOLTAGE
FIG.3 - REVERSSE CURRENT VS. REVERSE VOLTAGE
FIG.4 - DIODE CAPACITANCE VS. REVERSE VOLTAGE
FIG.2 - FORWARD CURRENT VS. FORWARD VOLTAGE
T
J
= 25
o
C
LL4148
LL4448
I
F

-

F
O
R
W
A
R
D

C
U
R
R
E
N
T

(

m
A

)
V
R
- REVERSE VOLTAGE ( V )
V
R
- REVERSE VOLTAGE ( V )
I
F

-

F
O
R
W
A
R
D

C
U
R
R
E
N
T

(

m
A

)
C
D

-

D
I
O
D
E

C
A
P
A
C
I
T
A
N
C
E

(

p
F

)
I
R

-

R
E
V
E
R
S
E

C
U
R
R
E
N
T

(

n
A

)
V
F
- FORWARD VOLTAGE ( V )
V
F
- FORWARD VOLTAGE ( V )
1
0
1
10
100
1000
100
T
J
= 25
o
C
Scattering Limit
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
2.0
Scattering Limit
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
2.0
T
J
= 25
o
C
Scattering Limit
0.1
1
10
0
0.5
1.0
1.5
2.0
3.0
100
2.5