P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=5
REFER TO ZVP2106A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-60
V
Continuous Drain Current at T
amb
=25C
I
D
-280
mA
Pulsed Drain Current
I
DM
-4
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-60
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-100
A
A
V
DS
=-60 V, V
GS
=0
V
DS
=-48 V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
-1
A
V
DS
=-18 V, V
GS
=-10V
Static Drain-Source
On-State Resistance (1)
R
DS(on)
5
V
GS
=-10V,I
D
=-500mA
Forward Transconductance
(1)(2)
g
fs
150
mS
V
DS
=-18V,I
D
=-500mA
Input Capacitance (2)
C
iss
100
pF
Common Source Output
Capacitance (2)
C
oss
60
pF
V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
20
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
-18V, I
D
=-500mA
Rise Time (2)(3)
t
r
15
ns
Turn-Off Delay Time (2)(3)
t
d(off)
12
ns
Fall Time (2)(3)
t
f
15
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP2106C
3-420
G
D
S
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