SOT223 N-CHANNEL ENHANCEMENT MODE
LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996
7
FEATURES
*
LOW R
DS(ON)
- 3
PARTMARKING DETAIL - ZVNL110
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
100
V
Continuous Drain Current at T
amb
=25C
I
D
600
mA
Pulsed Drain Current
I
DM
6
A
Gate-Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
100
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.75
1.5
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
100
A
A
V
DS
=100V, V
GS
=0V
V
DS
=80V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
750
mA
V
DS
=25V, V
GS
=5V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
4.5
3.0
V
GS
=5V, I
D
=250mA
V
GS
=10V, I
D
=500mA
Forward Transconductance(1)(2) g
fs
225
mS
V
DS
=25V, I
D
=500mA
Input Capacitance (2)
C
iss
75
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
25V, I
D
=1A, V
GS
=10V
Rise Time (2)(3)
t
r
12
ns
Turn-Off Delay Time (2)(3)
t
d(off)
15
ns
Fall Time (2)(3)
t
f
13
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVNL110G
3 - 419
D
D
S
G
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