PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 140 Volt V
CEO
* Gain of 250 at I
C
=0.2 Amps
* Very low saturation voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-140
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Practical Power Dissipation*
P
totp
1.5
W
Power Dissipation at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/C
Operating and Storage Temperature Range
T
j:
T
stg
-55 to +200
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-140
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-140
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
A
V
CB
=-100V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.3
-0.3
-0.25
V
V
V
I
C
=-100mA, I
B
=-1mA*
I
C
=-200mA, I
B
=-5mA*
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.95
V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
IC=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
100
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-200mA, V
CE
=-2V*
I
C
=-300mA, V
CE
=-2V*
E-Line
TO92 Compatible
ZTX795A
3-285
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
15
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
100
1900
ns
ns
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
C/W
C/W
C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX795A
-40
0.0001
Derating curve
T
-Temperature
(C)
M
ax Po
we
r
D
is
sipat
i
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-286
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 140 Volt V
CEO
* Gain of 250 at I
C
=0.2 Amps
* Very low saturation voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-140
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Practical Power Dissipation*
P
totp
1.5
W
Power Dissipation at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/C
Operating and Storage Temperature Range
T
j:
T
stg
-55 to +200
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-140
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-140
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
A
V
CB
=-100V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.3
-0.3
-0.25
V
V
V
I
C
=-100mA, I
B
=-1mA*
I
C
=-200mA, I
B
=-5mA*
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.95
V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
IC=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
100
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-200mA, V
CE
=-2V*
I
C
=-300mA, V
CE
=-2V*
E-Line
TO92 Compatible
ZTX795A
3-285
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
15
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
100
1900
ns
ns
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
C/W
C/W
C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX795A
-40
0.0001
Derating curve
T
-Temperature
(C)
M
ax Po
we
r
D
is
sipat
i
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-286
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