NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX656
ZTX657
UNIT
Collector-Base Voltage
V
CBO
200
300
V
Collector-Emitter Voltage
V
CEO
200
300
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX656
ZTX657
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
200
300
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
200
300
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
5
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
100
nA
nA
V
CB
=160V, I
E
=0
V
CB
=200V, I
E
=0
Emitter Cut-Off
Current
I
EBO
100
100
nA
V
EB
=3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
0.5
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1
1
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1
1
V
IC=100mA, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
50
40
50
40
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
Transition
Frequency
f
T
30
30
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
E-Line
TO92 Compatible
ZTX656
ZTX657
3-227
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
I
C
- Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
1000
10
100
0.001
0.01
0.1
1
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
300s
0.01
0.1
10
1
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
B
E
(s
a
t
)
-
(
V
o
lts
)
I
C
/I
B
=10
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
F
E
-
No
r
ma
l
ised
Ga
i
n
(
%
)
0.01
10
0.1
1
V
CE
=5V
0.01
10
0.1
1
0.6
0.8
1.0
1.2
I
C
/I
B
=10
0.4
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
-
(
V
olts
)
Switching Speeds
I
C
-
Collector Current (Amps)
Switching time
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
1.2
1.4
0
ts
s
2
1
3
td
tr
tf
s
0.6
0.4
0.2
0.8
1.0
40
60
80
100
20
0
0.01
10
0.1
1
0.6
0.8
1.0
1.2
0.4
V
CE
=5V
ZTX656
V
CE
=10V
0.4
0.6
0.8
1.0
0.2
0
1.4
1.6
1.2
1.8
0
ZTX657
ZTX656
ZTX657
3-228
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX656
ZTX657
UNIT
Collector-Base Voltage
V
CBO
200
300
V
Collector-Emitter Voltage
V
CEO
200
300
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX656
ZTX657
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
200
300
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
200
300
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
5
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
100
nA
nA
V
CB
=160V, I
E
=0
V
CB
=200V, I
E
=0
Emitter Cut-Off
Current
I
EBO
100
100
nA
V
EB
=3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
0.5
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1
1
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1
1
V
IC=100mA, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
50
40
50
40
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
Transition
Frequency
f
T
30
30
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
E-Line
TO92 Compatible
ZTX656
ZTX657
3-227
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
I
C
- Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
1000
10
100
0.001
0.01
0.1
1
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
300s
0.01
0.1
10
1
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
B
E
(s
a
t
)
-
(
V
o
lts
)
I
C
/I
B
=10
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
F
E
-
No
r
ma
l
ised
Ga
i
n
(
%
)
0.01
10
0.1
1
V
CE
=5V
0.01
10
0.1
1
0.6
0.8
1.0
1.2
I
C
/I
B
=10
0.4
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
-
(
V
olts
)
Switching Speeds
I
C
-
Collector Current (Amps)
Switching time
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
1.2
1.4
0
ts
s
2
1
3
td
tr
tf
s
0.6
0.4
0.2
0.8
1.0
40
60
80
100
20
0
0.01
10
0.1
1
0.6
0.8
1.0
1.2
0.4
V
CE
=5V
ZTX656
V
CE
=10V
0.4
0.6
0.8
1.0
0.2
0
1.4
1.6
1.2
1.8
0
ZTX657
ZTX656
ZTX657
3-228
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