NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 JUNE 94
FEATURES
* 160 Volt V
CEO
* 1 Amp continuous current
* Gain of 5K at I
C
=1 Amp
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT
Collector-Base Voltage
V
CBO
160
180
V
Collector-Emitter Voltage
V
CEO
140
160
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
4
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160
180
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
140
160
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
10
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
0.01
10
0.01
10
A
A
A
A
V
CB
=140V
V
CB
=160V
V
CB
=140V,
T
=
=100C
V
CB
=160V,
T
=
=100C
Emitter Cut-Off
Current
I
EBO
0.1
0.1
A
V
EB
=8V
Colllector-Emitter
Cut-Off Current
I
CES
10
10
A
A
V
CES
=140V
V
CES
=160V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.75
0.85
1.1
1.2
0.75
0.85
1.1
1.2
V
V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.7
1.9
1.7
1.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.5
1.7
1.5
1.7
V
IC=1A, V
CE
=5V*
E-Line
TO92 Compatible
ZTX600
ZTX601
3-206
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Static Forward
Current Transfer
Ratio
Group A
Group B
h
FE
1K
2K
1K
100K
1K
2K
1K
100K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
1K
2K
1K
2K
5K
3K
20K
1K
2K
1K
2K
5K
3K
20K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
5K
10K
5K
10K
20K
10K
100K
5K
10K
5K
10K
20K
10K
100K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150
250
150
250
MHz I
C
=100mA,
V
CE
=10V f=20MHz
Input Capacitance C
ibo
60
90
60
90
pF
V
EB
=0.5V, f=1MHz
Output
Capacitance
C
obo
10
15
10
15
pF
V
CE
=10V, f=1MHz
Switching Times
t
on
0.75
0.75
s
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
t
off
2.2
2.2
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
The maximum permissible operational temperature can be obtained from this graph using the
following equation
T
amb
(
max
)
=
Power
(
max
)
-
Power
(
act
)
0.0057
+
25
C
T
amb(max )
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
C
B
E
ZTX600
ZTX601
Voltage Derating Graph
V
CE
- Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
R
5
= 5K
1
10
100
DC Conditions
R
5
= 50K
R
5
=
Maxim
um
P
o
w
e
r
Di
s
s
i
pa
ti
on (
W
)
200
R
5
= 1M
3-207
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 JUNE 94
FEATURES
* 160 Volt V
CEO
* 1 Amp continuous current
* Gain of 5K at I
C
=1 Amp
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT
Collector-Base Voltage
V
CBO
160
180
V
Collector-Emitter Voltage
V
CEO
140
160
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
4
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160
180
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
140
160
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
10
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
0.01
10
0.01
10
A
A
A
A
V
CB
=140V
V
CB
=160V
V
CB
=140V,
T
=
=100C
V
CB
=160V,
T
=
=100C
Emitter Cut-Off
Current
I
EBO
0.1
0.1
A
V
EB
=8V
Colllector-Emitter
Cut-Off Current
I
CES
10
10
A
A
V
CES
=140V
V
CES
=160V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.75
0.85
1.1
1.2
0.75
0.85
1.1
1.2
V
V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.7
1.9
1.7
1.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.5
1.7
1.5
1.7
V
IC=1A, V
CE
=5V*
E-Line
TO92 Compatible
ZTX600
ZTX601
3-206
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Static Forward
Current Transfer
Ratio
Group A
Group B
h
FE
1K
2K
1K
100K
1K
2K
1K
100K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
1K
2K
1K
2K
5K
3K
20K
1K
2K
1K
2K
5K
3K
20K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
5K
10K
5K
10K
20K
10K
100K
5K
10K
5K
10K
20K
10K
100K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150
250
150
250
MHz I
C
=100mA,
V
CE
=10V f=20MHz
Input Capacitance C
ibo
60
90
60
90
pF
V
EB
=0.5V, f=1MHz
Output
Capacitance
C
obo
10
15
10
15
pF
V
CE
=10V, f=1MHz
Switching Times
t
on
0.75
0.75
s
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
t
off
2.2
2.2
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
The maximum permissible operational temperature can be obtained from this graph using the
following equation
T
amb
(
max
)
=
Power
(
max
)
-
Power
(
act
)
0.0057
+
25
C
T
amb(max )
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
C
B
E
ZTX600
ZTX601
Voltage Derating Graph
V
CE
- Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
R
5
= 5K
1
10
100
DC Conditions
R
5
= 50K
R
5
=
Maxim
um
P
o
w
e
r
Di
s
s
i
pa
ti
on (
W
)
200
R
5
= 1M
3-207
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