PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 30 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation: at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-35
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30
V
I
C
=-10mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
-10
A
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.50
-0.50
-0.75
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
ZTX549A
-0.30
V
I
C
=-100mA, I
B
=-1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(on)
-0.85
-1
V
IC=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
80
40
200
130
80
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
ZTX549
100
160
300
I
C
=-500mA, V
CE
=-2V*
ZTX549A
150
200
500
I
C
=-500mA, V
CE
=-2V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZTX549
ZTX549A
3-191
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
300
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
50
ns
C
B
E
E-Line
TO92 Compatible
ZTX549
ZTX549A
3-192
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 30 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation: at T
amb
=25C
derate above 25C
P
tot
1
5.7
W
mW/ C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-35
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30
V
I
C
=-10mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
-10
A
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.50
-0.50
-0.75
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
ZTX549A
-0.30
V
I
C
=-100mA, I
B
=-1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(on)
-0.85
-1
V
IC=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
80
40
200
130
80
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
ZTX549
100
160
300
I
C
=-500mA, V
CE
=-2V*
ZTX549A
150
200
500
I
C
=-500mA, V
CE
=-2V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZTX549
ZTX549A
3-191
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
300
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
50
ns
C
B
E
E-Line
TO92 Compatible
ZTX549
ZTX549A
3-192
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