SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 4 - SEPTEMBER 1997
FEATURES
* Up to 3.5 Amps continuous collector current, up to 5 Amp peak
* V
CEO
= 300V
* Very low saturation voltage
* Excellent h
FE
specified up to 3 Amps
PARTMARKING DETAIL -
FZT857
COMPLEMENTARY TYPE -
FZT957
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
350
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
5
A
Continuous Collector Current
I
C
3.5
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches square.
FZT857
C
C
E
B
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