SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 4 - NOVEMBER 2001
FEATURES
*
Up to 5 Amps continuous collector current, up to 10 Amp peak
*
Very low saturation voltage
*
Excellent h
FE
specified up to 10 Amps
PARTMARKING DETAIL -
FZT855
COMPLEMENTARY TYPE -
FZT955
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
250
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
5
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
FZT855
C
C
E
B
78
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
250
375
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
250
375
V
I
C
=1
A, RB1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
150
180
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
50
1
nA
A
V
CB
=200V
V
CB
=200V,
T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
50
1
nA
A
V
CB
=200V
V
CB
=200V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
20
35
60
260
40
65
110
355
mV
mV
mV
mV
I
C
=100mA, I
B
=5mA*
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=5A, I
B
=500mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1250
mV
I
C
=5A, I
B
=500mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.1
V
I
C
=5A, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
100
100
15
200
200
30
10
300
I
C
=10mA, V
CE
=5V
I
C
=1A, V
CE
=5V*
I
C
=5A, V
CE
=5V*
I
C
=10A, V
CE
=5V*
Transition Frequency
f
T
90
MHz
I
C
==100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
22
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
66
2130
ns
ns
I
C
=1A, I
B1
=100mA
I
B2
=100mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
FZT855
78
FZT855
0.01
0.1
1
10
0.4
0
0.8
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(
s
a
t
)
-
(
V
o
l
t
s
)
I
C
- Collector Current (Amps)
V
BE(sat)
v I
C
0.01
0.1
1
10
1.0
0.5
2.0
1.5
I
C
- Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
-
(
V
o
l
t
s
)
V
B
E
(
s
a
t
)
-
(
V
o
l
t
s
)
0.6
0.2
0.01
0.1
1
10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
- Collector Current (Amps)
h
FE
v I
C
h
F
E
-
N
o
r
m
a
l
i
s
e
d
G
a
i
n
300
200
100
h
FE
- T
y
p
i
c
a
l G
a
i
n
100
V
CE
=10V
100
0.001
0.01
0.1
1
10
1.0
0.5
2.0
1.5
100
0.001
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=50
V
CE
=5V
I
C
/I
B
=50
I
C
/I
B
=10
100
Safe Operating Area
Single Pulse Test Tamb=25C
I
C
-
Col
l
e
c
t
o
r
Cur
r
ent
(
A
)
0.1
1
10
1 100 1000
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
78
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