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Электронный компонент: FZT600

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SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 FEBRUARY 1997
FEATURES
* 2A continuous current
* 140 VOLT V
CEO
* Guaranteed h
FE
Specified up to 1A
PART MARKING DETAIL
FZT600
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
140
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
4
A
Continuous Collector Current
I
C
2
A
Power Dissipation
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
140
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
10
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.01
10
A
A
V
CB
=140V
V
CB
=140V, T
amb
=100C
Collector Cut-Off Current
I
CES
10
A
V
CES
=140V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=8V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.75
0.85
1.1
1.2
V
V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
Base-Emitter Saturation Voltage V
BE(sat)
1.7
1.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter Turn-On Voltage V
BE(on)
1.5
1.7
V
I
C
=1A, V
CE
=5V*
Static Forward
Current Transfer
Ratio
GROUP B
h
FE
1k
2k
1k
100k
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
5k
10k
5k
10k
20k
10k
100k
I
C
=50mA, V
CE
=10V*
I
C
=0.5mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition Frequency
f
T
150
250
MHz
I
C
=100mA, V
CE
=10V
f=20MHz
Output Capacitance
C
obo
10
15
MHz
V
CB
=10V, f=1MHz
Switching Times
T
on
0.75
s
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
T
off
2.20
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT600
3 - 197
C
C
E
B
C
C
E
B
FZT600
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
h
FE
v I
C
h
-

Gai
n
0.001
0.01
10
0.1
1
4k
8k
12k
16k
20k
V
+-
=10V
Group A
Group B
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-

(
V
olts
)
1.2
1.3
1.4
1.5
0.01
0.1
1
10
1.1
V
+-
=5V
I
+
-
Collector Current (Amps)
V
-

(
V
olts
)
0
0.60
0.01
0.1
10
1
0.70
0.80
0.90
1.00
I
+
/I
*
=100
I
+
-
Collector Current (Amps)
V
-

(
V
olts
)
1.0
0.01
10
0.1
1
1.2
1.4
1.6
1.8
I
+
/I
*
=100
3 - 198
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 FEBRUARY 1997
FEATURES
* 2A continuous current
* 140 VOLT V
CEO
* Guaranteed h
FE
Specified up to 1A
PART MARKING DETAIL
FZT600
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
140
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
4
A
Continuous Collector Current
I
C
2
A
Power Dissipation
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
140
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
10
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.01
10
A
A
V
CB
=140V
V
CB
=140V, T
amb
=100C
Collector Cut-Off Current
I
CES
10
A
V
CES
=140V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=8V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.75
0.85
1.1
1.2
V
V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
Base-Emitter Saturation Voltage V
BE(sat)
1.7
1.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter Turn-On Voltage V
BE(on)
1.5
1.7
V
I
C
=1A, V
CE
=5V*
Static Forward
Current Transfer
Ratio
GROUP B
h
FE
1k
2k
1k
100k
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
5k
10k
5k
10k
20k
10k
100k
I
C
=50mA, V
CE
=10V*
I
C
=0.5mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition Frequency
f
T
150
250
MHz
I
C
=100mA, V
CE
=10V
f=20MHz
Output Capacitance
C
obo
10
15
MHz
V
CB
=10V, f=1MHz
Switching Times
T
on
0.75
s
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
T
off
2.20
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT600
3 - 197
C
C
E
B
C
C
E
B
FZT600
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
h
FE
v I
C
h
-

Gai
n
0.001
0.01
10
0.1
1
4k
8k
12k
16k
20k
V
+-
=10V
Group A
Group B
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-

(
V
olts
)
1.2
1.3
1.4
1.5
0.01
0.1
1
10
1.1
V
+-
=5V
I
+
-
Collector Current (Amps)
V
-

(
V
olts
)
0
0.60
0.01
0.1
10
1
0.70
0.80
0.90
1.00
I
+
/I
*
=100
I
+
-
Collector Current (Amps)
V
-

(
V
olts
)
1.0
0.01
10
0.1
1
1.2
1.4
1.6
1.8
I
+
/I
*
=100
3 - 198