SOT23 NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 NOVEMBER 1995
FEATURES
* High f
T
=650MHz
* Maximum capacitance 0.7pF
* Low noise < 5dB at 500MHz
PARTMARKING DETAIL
3EZ
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CES
30
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
3
V
Continuous Collector Current
I
C
25
mA
Peak Pulse Current
I
CM
50
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
30
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
25
V
I
C
=1mA, I
B
=0
Emitter-Base Breakdown
Voltage
V
(BR)EBO
3
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=25V, I
E
=0
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=2V,I
C
=0
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.5
V
I
C
=4mA, I
B
=0.4mA
Common Base Feedback
Capacitance
C
rb
Typ.
0.45
0.65
pF
V
CB
=10V, I
E
=0
f=1MHz
Base-Emitter Turn-On
Voltage
V
BE(on)
0.95
V
I
C
=4mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
60
I
C
=4mA, V
CE
=10V*
Transition Frequency
f
T
650
MHz
I
C
=4mA, V
CE
=10V, f=100MHz
Collector Base Capacitance C
cb
0.7
pF
V
CB
=10V, I
E
=0, f=1MHz
Collector Base Time Constant r
b
C
c
9
ps
I
C
=4mA, V
CB
=10V, f=31.8MHz
Noise Figure
N
f
Typ.
3
5
dB
I
C
=2mA, V
CE
=5V
f=500MHz,
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMTH10
C
B
E
SOT23
3 - 182
3 - 181
FMMTH10
100
50
0
150
200
100
TYPICAL CHARACTERISTICS
h
FE
v I
C
I
C
-
(mA)
h
-G
a
i
n
V
-
(
V
o
lts
)
V
+-
=-10V
0.1
1
10
0.4
0.2
0
0.8
1.0
0.6
500
0
1500
1000
30
0 0.1
1
10
C
-
(
pF
)
V
CB
-
(Volts)
1.2
C
CB
v V
CB
f
T
v I
C
V
+-
=10V
f=100MHz
175C
100C
25C
-55C
100
0.1
1
10
V
+-
=-10V
175C
100C
25C
-55C
f
- (MH
z)
I
C
-
(mA)
100
0.1
1
10
I
C
-
(mA)
1.0
0.8
0.6
0.4
0.2
V
BE(on)
v I
C
SOT23 NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 NOVEMBER 1995
FEATURES
* High f
T
=650MHz
* Maximum capacitance 0.7pF
* Low noise < 5dB at 500MHz
PARTMARKING DETAIL
3EZ
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CES
30
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
3
V
Continuous Collector Current
I
C
25
mA
Peak Pulse Current
I
CM
50
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
30
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
25
V
I
C
=1mA, I
B
=0
Emitter-Base Breakdown
Voltage
V
(BR)EBO
3
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=25V, I
E
=0
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=2V,I
C
=0
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.5
V
I
C
=4mA, I
B
=0.4mA
Common Base Feedback
Capacitance
C
rb
Typ.
0.45
0.65
pF
V
CB
=10V, I
E
=0
f=1MHz
Base-Emitter Turn-On
Voltage
V
BE(on)
0.95
V
I
C
=4mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
60
I
C
=4mA, V
CE
=10V*
Transition Frequency
f
T
650
MHz
I
C
=4mA, V
CE
=10V, f=100MHz
Collector Base Capacitance C
cb
0.7
pF
V
CB
=10V, I
E
=0, f=1MHz
Collector Base Time Constant r
b
C
c
9
ps
I
C
=4mA, V
CB
=10V, f=31.8MHz
Noise Figure
N
f
Typ.
3
5
dB
I
C
=2mA, V
CE
=5V
f=500MHz,
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMTH10
C
B
E
SOT23
3 - 182
3 - 181
FMMTH10
100
50
0
150
200
100
TYPICAL CHARACTERISTICS
h
FE
v I
C
I
C
-
(mA)
h
-G
a
i
n
V
-
(
V
o
lts
)
V
+-
=-10V
0.1
1
10
0.4
0.2
0
0.8
1.0
0.6
500
0
1500
1000
30
0 0.1
1
10
C
-
(
pF
)
V
CB
-
(Volts)
1.2
C
CB
v V
CB
f
T
v I
C
V
+-
=10V
f=100MHz
175C
100C
25C
-55C
100
0.1
1
10
V
+-
=-10V
175C
100C
25C
-55C
f
- (MH
z)
I
C
-
(mA)
100
0.1
1
10
I
C
-
(mA)
1.0
0.8
0.6
0.4
0.2
V
BE(on)
v I
C
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