SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
COMPLIMENTARY TO FMMT493
PARTMARKING DETAIL - P93
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX. UNITCONDITIONS.
Breakdown Voltages
V
(BR)CBO
-120
V
I
C
=-100
A
V
(BR)CEO
-100
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
A
Cut-Off Currents
I
CBO
-100
nA V
CB
=-100V
I
EBO
-100
nA V
EB
=-4V
I
CES
-100
nA V
CES
=-100V
Saturation Voltages
V
CE(sat)
-0.2
-0.3
V
V
I
C
=-250mA,I
B
=-25mA*
I
C
=-500mA I
B
=-50mA*
V
BE(sat)
-1.1
V
I
C
=-500mA,I
B
=-50mA*
Base-Emitter Turn-on Voltage
V
BE(on)
-1.0
V
I
C
=-1mA, V
CE
=-5V*
Static Forward Current Transfer Ratio h
FE
100
100
100
50
300
I
C
=-1mA, V
CE
=-5V
I
C
=-250mA,V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
Transition Frequency
f
T
50
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
5
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical Characteristics graphs see FMMT593 datasheet
FCX593
3 - 94
C
C
B
E
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