SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
*
Fast Switching
*
High h
FE
PARTMAKING DETAIL -- AS3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
90
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
10
V
Pea Pulse Current
I
CM
1.5
A
Continuous Collector Current
I
C
500
mA
Base Current
I
B
100
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
90
V
I
C
=10
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
V
I
E
=10
A, I
C
=0
Emitter Cut-Off Current
I
EBO
10
A
V
EB
=8V, I
E
=0
Collector-Emitter
Cut-Off Current
I
CES
10
A
V
CE
=80V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.3
1.3
V
V
I
C
=500mA, I
B
=0.5mA
I
C
=500mA, I
B
=0.5mA
T
j
=150C
Base-Emitter
Saturation Voltage
V
BE(sat)
1.9
V
I
C
=500mA, I
B
=0.5mA
Static Forward Current
Transfer Ratio
h
FE
1K
2K
I
C
=150mA, V
CE
=10V*
I
C
=-500mA, V
CE
=-10V*
Turn On Time
t
on
400 Typical
ns
I
C
=500mA
I
Bon
=I
Boff
=0.5mA
Turn Off Time
t
off
1.5K Typical
ns
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT614 datasheet.
BST52
C
C
B
E
SOT89
3 - 80
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