Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
60
V
I
D
Continuous Drain Current(@T
C
= 25
C)
50
A
Continuous Drain Current(@T
C
= 100
C)
35
A
I
DM
Drain Current Pulsed
(Note 1)
200
A
V
GS
Gate to Source Voltage
20
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
493
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
12.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
7.0
V/ns
P
D
Total Power Dissipation(@T
C
= 25 C)
120
W
Derating Factor above 25 C
0.8
W/C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 175
C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
R
JC
Thermal Resistance, Junction-to-Case
-
-
1.24
C/W
R
CS
Thermal Resistance, Case to Sink
-
0.5
-
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
C/W
WFP50N06
Features
R
DS(on)
(Max 0.022 )@V
GS
=10V
Gate Charge (Typical 32nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (175C)
General Description
This Power MOSFET is produced using Wisdom's advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
N-Channel MOSFET
Wisdom
Semiconductor
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Symbol
2. Drain
3. Source
1. Gate
TO-220
1 2
3
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
60
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 C
-
0.07
-
V/C
I
DSS
Drain-Source Leakage Current
V
DS
= 60V, V
GS
= 0V
-
-
10
uA
V
DS
= 48V, T
C
= 125 C
-
-
100
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 20V, V
DS
= 0V
-
-
100
nA
Gate-source Leakage, Reverse
V
GS
= -20V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
V
GS
=10 V, I
D
= 25.0A
-
0.018
0.022
Dynamic Characteristics
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
1050
1365
pF
C
oss
Output Capacitance
-
460
600
C
rss
Reverse Transfer Capacitance
-
70
90
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=30V, I
D
=25.0A, R
G
=25
(Note 4, 5)
-
20
50
ns
t
r
Rise Time
-
100
210
t
d(off)
Turn-off Delay Time
-
80
170
t
f
Fall Time
-
85
180
Q
g
Total Gate Charge
V
DS
=48V, V
GS
=10V, I
D
=50A
(Note 4, 5)
-
32
42
nC
Q
gs
Gate-Source Charge
-
8
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
12
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
50
A
I
SM
Pulsed Source Current
-
-
200
V
SD
Diode Forward Voltage
I
S
=50A, V
GS
=0V
-
-
1.5
V
t
rr
Reverse Recovery Time
I
S
=50A, V
GS
=0V, dI
F
/dt=100A/us
-
50
-
ns
Q
rr
Reverse Recovery Charge
-
70
-
uC
WFP50N06
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 230uH, I
AS
=50A, V
DD
= 25V, R
G
= 25 , Starting T
J
= 25C
3. I
SD
50A, di/dt 300A/us, V
DD
BV
DSS
, Starting T
J
= 25C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Copyright@Wisdom Semiconductor Inc., All rights reserved.
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
V
DS
= 30V
V
DS
= 48V
Note : I
D
= 50A
V
GS
,
G
a
t
e
-So
u
r
c
e V
o
lt
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0
10
1
10
2
175
Notes :
1. V
GS
= 0V
2. 250s Pulse Test
25
I
DR
, Rev
e
r
s
e Dr
ai
n
Cu
r
r
e
n
t
[
A
]
V
SD
, Source-Drain voltage [V]
0
50
100
150
200
0.00
0.01
0.02
0.03
0.04
0.05
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
[
],
D
r
ai
n
-
S
o
u
r
c
e
O
n
-
R
esi
s
t
anc
e
I
D
, Drain Current [A]
2
4
6
8
10
10
0
10
1
10
2
175
25
-55
Notes :
1. V
DS
= 30V
2. 250 s Pulse Test
I
D
,
Dr
ain Cur
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Note :
1. 250s Pulse Test
2. T
C
= 25
I
D
,
Dr
ai
n Cur
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
3500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
pac
it
anc
e
[
p
F]
V
DS
, Drain-Source Voltage [V]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t) = 1 .2 4
/W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t), The
r
mal
R
e
s
pon
se
t
1
, S q u a re W a v e P u ls e D u r a tio n [s e c ]
25
50
75
100
125
150
175
0
10
20
30
40
50
60
I
D
,
D
r
a
i
n C
u
r
r
en
t [
A
]
T
C
, Case Temperature [ ]
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
I
D
, D
r
ai
n Cu
rrent
[A
]
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DS
S
,
(
N
or
m
a
l
i
zed)
Dr
ai
n-
Sour
ce Br
eakdown Vol
t
age
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
GS
= 10 V
2. I
D
= 25.0 A
R
DS
(
O
N
)
, (
N
or
m
a
li
z
e
d
)
D
r
ai
n-S
o
urce On-R
esi
s
t
a
n
c
e
T
J
, Junction Temperature [
o
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
C
h
a
rg
e
V
G
S
1
0
V
Q
g
Q
g
s
Q
g
d
3
m
A
V
G
S
D
U
T
V
D
S
3
0
0
n
F
5
0
K
2
0
0
n
F
1
2
V
S
a
m
e
T
yp
e
a
s D
U
T
C
h
a
rg
e
V
G
S
1
0
V
Q
g
Q
g
s
Q
g
d
3
m
A
V
G
S
D
U
T
V
D
S
3
0
0
n
F
5
0
K
2
0
0
n
F
1
2
V
S
a
m
e
T
yp
e
a
s D
U
T
V
G
S
V
D
S
1
0
%
9
0
%
t
d
(
o
n
)
t
r
t
o
n
t
o
ff
t
d
(
o
ff)
t
f
V
D
D
1
0
V
V
D
S
R
L
D
U
T
R
G
V
G
S
V
G
S
V
D
S
1
0
%
9
0
%
t
d
(
o
n
)
t
r
t
o
n
t
o
ff
t
d
(
o
ff)
t
f
V
D
D
1
0
V
V
D
S
R
L
D
U
T
R
G
V
G
S
E
A
S
=
L
I
A
S
2
----
2
1
--------------------
B
V
D
S
S
-V
D
D
B
V
D
S
S
V
D
D
V
D
S
B
V
D
S
S
t
p
V
D
D
I
A
S
V
D
S
(t)
I
D
(t)
T
im
e
1
0
V
D
U
T
R
G
L
I
D
t
p
E
A
S
=
L
I
A
S
2
----
2
1
E
A
S
=
L
I
A
S
2
----
2
1
----
2
1
--------------------
B
V
D
S
S
-V
D
D
B
V
D
S
S
V
D
D
V
D
S
B
V
D
S
S
t
p
V
D
D
I
A
S
V
D
S
(t)
I
D
(t)
T
im
e
1
0
V
D
U
T
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
PDF 
ZIP