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Электронный компонент: WTC2306A

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WEITRON
http:www.weitron.com.tw
DRAIN CURRENT
5 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
Features:
*Super High Dense Cell Design For Low R
DS(ON)
R
DS(ON)
<30m@V
GS
=10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
Maximum Ratings
(
(T
T
A
A
=
=2
25
5
U
Un
nlle
es
ss
s O
Otth
he
errw
wiis
se
e S
Sp
pe
ec
ciiffiie
ed
d))
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Con tinuous Drain Current
3
,V
GS
@4.5V(T
A
5
,V
GS
@4.5V(T
A
I
D
4
Pulsed Drain Current
1,2
I
DM
20
A
Total Power Dissipation(T
A
=25
)
P
D
1.38
W
Maximum Thermal Resistance Junction-ambient
3
R
JA
90
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55~+150
C
Device Marking
WTC2306A=2306A
WTC2306A
N-Channel Enhancement
Mode Power MOSFET
C
1
2
3
GATE
SOURCE
DRAIN
SOT-23
1
2
3
13-May-05
1/6
WEITRON
http:www.weitron.com.tw
Electrical Characteristics
(T
A
= 25 Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
=0,I
D
=250A
V
(BR)DSS
30
-
-
Gate-Source Threshold Voltage
V
DS
=V
GS
,I
D
=250
A
V
GS(Th)
0.5
-
1.2
V
Gate-Source Leakage Current
V
GS
=20V
I
GSS
-
-
100
nA
-
-
1
Drain- Sou rce Leakage Current(Tj=25C)
V
DS
=30V,V
GS
=0
Drain- Sou rce Leakage Current(Tj=70C)
V
DS
=24V,V
GS
=0
I
DSS
-
-
25
A
Drain-Source On-Resistance
V
GS
=10V,I
D
=5A
V
GS
=4.5V,I
D
=5A
V
GS
=2.5V,I
D
=2.6A
V
GS
=1.8V,I
D
=1.0A

R
DS(o n)
-
-
-
-
30
35
-
-
-
-
50
90
m
Forward Transconductance
V
DS
=5V,I
D
=5A
g
fs
-
13
-
S
Dynamic
Input Capacitance
V
GS
=0V,V
DS
=25V,f=1.0MHz
C
iss
-
660 1050
Output Capacitance
V
GS
=0V,V
DS
=25V,f=1.0MHz
C
oss
-
90
-
Reverse Transfer Capacitance
V
GS
=0V,V
DS
=25V,f=1.0MHz
C
rss
-
70
-
pF
2/6
13-May-05
WTC2306A
Switching
Turn-on Delay Time
2
V
DS
=15V,V
GS
=10V,I
D
=5A,R
D
=3,R
G
=3.3
V
DS
=15V,V
GS
=10V,I
D
=5A,R
D
=3,R
G
=3.3
V
DS
=15V,V
GS
=10V,I
D
=5A,R
D
=3,R
G
=3.3
V
DS
=15V,V
GS
=10V,I
D
=5A,R
D
=3,R
G
=3.3
V
DS
=16V,V
GS
=4.5,I
D
=5.0A
V
DS
=16V,V
GS
=4.5,I
D
=5.0A
V
DS
=16V,V
GS
=4.5,I
D
=5.0A
t
d
(on)
-
6
-
Rise Time
tr
-
20
-
Turn-o ff Delay Time
t
d
(off)
-
20
-
Fall T ime
tf
-
3
-
ns
Total Gate Charge
2
Q
g
-
8.7
15
Gate-Source Charge
Q
gs
-
1.5
-
Gate-Drain Change
Q
gd
-
3.2
-
nC
Source-Drain Diode Characteristics
Forward On Voltage
2
2
V
GS
=0,I
S
=1.2A
V
GS
=0,I
S
=5A,dl/dt=100A/ s
V
GS
=0,I
S
=5A,dl/dt=100A/ s
V
SD
-
-
1.2
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
T
rr
-
Q
rr
-
14 -
7
-
Note: 1. Pulse width limited by Max, junction temperature.
2. pulse width300s, duty cycle2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270/W when mounted on min, copper pad.
3/6
13-May-05
WEITRON
http:www.weitron.com.tw
WTC2306A
WEITRON
http://www.weitron.com.tw
WTC2306A
V
DS
,DRAIN-TO-SOURCE VOLTAGE(V)
I
D

,
D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
I
D

,
D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
V
DS
,Drain-to-source Voltage(V)
FIG.1 Typical Output Characteristics
V
GS
,Gate-to-source Voltage(V)
R
)
n
(
o
s
D

(
m
)
100
80
60
40
20
1 3 5 7 9 11
Fig.3 On-Resistance v.s. Gate Voltage
o
r
m
a
l
i
z
e
d

R
N
D
s
(
o
n
)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100 150
Fig.4 Normalized OnResistance
Fig.2 Typical Output Characteristics
I
D
= 5.3A
T
A
= 25C
V
DS
,Source-to-Drain Voltage(V)
I
S
)
A
(
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Fig.5 Forward Characteristics of
Reverse Diode
T
j
,Junction Temperature(C)
T
j
,Junction Temperature(C)
V
)
h
t
(
S
G
)
V
(
1.6
1.4
1.0
1.2
0.8
0.6
0.4
0.2
-50 0 50 100 150
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
I
D
= 5.3A
V
G
= 4.5V
T
j
= 25C
T
j
= 150C
5.0V
4.5V
4.0V
V
G
=2.5V
80
60
40
20
0
0 1 2 3 4 5 6 7
TA=25C
5.0V
4.5V
4.0V
V
G
=2.5V
50
40
20
30
10
0
0 1 2 3 4 5 6 7 8
TA=125C
4/6
13-May-05
WEITRON
http://www.weitron.com.tw
WTC2306A
Q
G
, Total Gate Charge(nC)
V
S
G

,

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e
(
V
)
14
12
10
8
6
4
2
0
0 5 10 15
20 25
Fig 7. Gate Charge Characteristics
V
DS
= 16V
I
D
= 5A
V
DS
, Drain-to-Source Voltage(V)
I
D
)
A
(
100
10
1
0.1
0.01
0.1 1 10 100
Fig 9. Maximum Safe Operation Area
T
A
= 25C
Single Pulse
1ms
10ms
100ms
Is
DC
t, Pulse Width(s)
R
(
e
s
n
o
p
s
e
R

l
a
m
r
e
h
T

d
e
z
i
l
a
m
r
o
N
a
j
)
1
0.1
0.01
0.001
0.0001 0.001 0.01 0.1
1 10
100 1000
Fig 10. Effective Transient Thermal Impedance
Duty factor = 0.5
V
DS
, Drain-to-Source Voltage(V)
F
p
(
C
)
1000
10000
100
10
1 5 9
13 17 21
25 29
Fig 8. Typical Capacitance Characteristics
f = 1.0MHz
0.2
0.1
0.05
0.01
Single pulse
P
DM
Duty factor = t / T
Peak Tj=P
DM
x R
ja
+ T
a
R
ja
=270C / W
t
T
Crss
Coss
Ciss
5/6
13-May-05
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
V
DS
90%
10%
V
GS
t
r
t
d(on)
t
d(off)
t
f
VG
4.5V
Q
G
Q
GS
Q
GD
Charge
Q
WEITRON
http://www.weitron.com.tw
WTC2306A
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
E
G
M
L
H
J
TOP VIEW
K
C
SOT-23
SOT-23 Outline Dimension
6/6
13-May-05