WEITRON
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WT-2307
Rating
Symbol
Value
Unite
V
DS
V
GS
I
D
I
DM
P
D
R
JA
Operating Junction and Storage
Temperature Range
T
J
, Tstg
I
S
-55 to 150
C
A
V
V
A
A
W
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T =125 C)
Pulsed Drain Current
Drain-Source Diode Forward Current
Power Dissipation
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
WT2307=S07
Surface Mount P-Channel
1
2
3
GATE
SOURCE
DRAIN
SOT-23
1
2
3
Features:
*Super high dense cell design for low R
DS(ON)
*Rugged and Reliable
*SOT-23 Package
R <80 m @V =-4.5V
-20
12
-3
-11
1.25
-1.25
100
-
+
Enhancement Mode MOSFET
DS(ON)
GS
R <100 m @V =-2.5V
DS(ON)
GS
J
(2)
(1)
(1)
(1)
DRAIN CURRENT
- 3 AMPERES
DRAIN SOURCE VOLTAGE
- 20 VOLTAGE
WEITRON
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WT-2307
Input Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Total Gate Charge
V
DS
=-10V, I
D
=-3A, V =-4.5V
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250 uA
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=-250 uA
Gate-Source Leakage Current
V
DS
=0V, V
GS
= 10V
Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-4.0A
On-State Drain Current
V
DS
=-5V, V
GS
=-4.5A
Forward Transconductance
V
DS
=-5V, I
D
=-5A
Static
Dynamic
Switching
(3)
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
r
DS (
on
)
V
SD
I
GSS
I
DSS
I
D(on)
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
Qg
Qgs
Qgd
-20
-
V
-0.5
-0.8
-1.5
V
-
-
-
-
-
1
100
nA
m
uA
A
S
70
85
80
100
586
101
59
PF
6.5
58.4
48
5.92
1.36
1.4
-1.815
-1.2
nS
nS
nS
nS
nc
nc
nc
V
-
32.1
-
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
V
DS
=-16V, V
GS
=0V
-
-
-
4
-15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Turn-On Time
Turn-Off Time
(2)
(3)
+
+
-
-
-
-
Rise Time
t
t
Fall Time
f
r
Note:
2. Pulse Test : PW 300us, Duty Cycle 2%.
1. Surface Mounted on FR4 Board t 10sec.
2. Guaranteed by Design, not Subject to Production Testing.
V
GS
=-2.5V, I
D
=-2.0A
GEN
=-4.5V,V =-10V, I =-1A, R =10 ,R =6
DD
D
L
V
GS
GEN
=-4.5V,V =-10V, I =-1A, R =10 ,R =6
DD
D
L
V
GS
GEN
=-4.5V,V =-10V, I =-1A, R =10 ,R =6
DD
D
L
V
GS
GS
Gate-Source Charge
V
DS
=-10V, I
D
=-3A, V =-4.5V
GS
Gate-Drain Charge
V
DS
=-10V, I
D
=-3A, V =-4.5V
Drain-Source Diode Forward Voltage
GS
V
DS
=0V, I
S
=-1.25A
GEN
=-4.5V,V =-10V, I =-1A, R =10 ,R =6
DD
D
L
V
GS
<_
<_
<_
WEITRON
http://www.weitron.com.tw
WT-2307
Typical Electrical Characteristics
FIG.2 Transfer Characteristics
FIG.4 On-Resistance Variation with
Temperature
FIG.3 Capacitance
1000
800
600
400
200
0
10
8
6
4
2
0
0
0
5
10
15
20
25
30
4
6
8
10
12
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100 125
-25
25
75
25
20
15
10
5
0
0.0
0.5
1
1.5
2
2.5
3
FIG.1 Output Characteristics
-V =2.5V
GS
-V =1.5V
GS
-V =-4.5V
GS
I =-4A
D
-V =10.5~3.5V
Coss
Ciss
Crss
GS
-55 C
25 C
-V , DRAIN-TO-SOURCE VOLTAGE(V)
DS
-V , GATE-TO-SOURCE VOLTAGE(V)
GS
-V , GATE-TO-SOURCE VOLTAGE(V)
T ( C)
GS
j
-I , DRAIN CURRENT(A)
P
-C ,CAPACITANCE( F)
R , ON-RESISTANCE(OHMS)
-I , DRAIN CURRENT(A)
D
DS(ON)
D
T =125 C
j
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WT-2307
FIG.5 with Temperature
FIG.6 Breakdown Voltage Variation
with Temperature
FIG.7 Transconductance Variation
with Drain Current
FIG.9 Gate Charge
FIG.10 Maximum Safe Operating Area
FIG.8 Body Diode Forward Voltage
Variation with Source Current
20
10
0
2
0.8
1.0
1.2
1.4
1.6
1.8
4
3
2
1
0
0
1
2
3
4
5
6
7
8
T
J
=25 C
50
10
1
1
0.1
0.03
0.1
1
10 20
50
-50 -25
0
25
50
75 100 125
1.10
1.07
1.04
1.00
0.97
0.94
0.91
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
10
8
6
4
12
0
0
5
10
15
20
25
2
5
T ,JUNCTION TEMPERATURE( C)
j
T ,JUNCTION TEMPERATURE( C)
j
I ,DRAIN-SOURCE CURRENT(A)
Q ,TOTAL GATE CHARGE(nC)
V ,BODY DIODE FORWARD VOLTAGE(V)
DS
V ,DRAIN-SOURCE CURRENT(V)
DS
SD
g
-I , DRAIN CURRENT(A)
GATE-SOURCE THRESHOLD VOLTAGE
V ,NORMALIZED
BV ,NORMALIZED
g ,TRANSCONDUCTANCE(S)
-V ,GATE TO SOURCE VOLTAGE(V)
I ,SOURCE-DRAIN CURRENT(A)
DRAIN-SOURCE BREAKDOWN VOLTAGE
th
FS
GS
S
DSS
D
V =V
DS
I =250uA
D
100ms
100ms
DC
Is
GS
I =250uA
D
V =-5V
DS
R (ON)Limit
DS
I =3A
D
V =10V
DS
T =25 C
C
V =-4.5V
Single Pulse
DS
on
WEITRON
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WT-2307
SQUARE WAVE PULSE DURATION(SEC)
NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
NORMALIZED TRANSIENT
THERMAL RESISTANCE
FIG.11 Switching Test Circuit
FIG.12 Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
5
INVE R TE D
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Single Pulse
P
DM
t
1
t
2
1. Rthja (t)=r (t) * R ja
2. R ja=See Datasheet
3. Tjm-TA = Pdm* R ja (t)
4. Duty Cycle, D=t1/t2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
WT-2307
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
E
G
M
L
H
J
T OP V IE W
K
C
SOT-23 Package Outline Dimensions
Unit:mm
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