ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
MPSA56
MPSA55
Unit
Vdc
Vdc
Vdc
mAdc
Rating
MPSA55
MPSA56
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
Driver PNP Transistors
(Ta=25 C)
-60
-4.0
-500
-60
Total Device Dissipation T =25 C
0.625
W
Junction Temperature
T j
150
Storage, Temperature
-55 to +150
A
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current (VEB= -3.0V c, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
-4.0
-
-
-
-
-
-
-0.1
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
-60
-80
-60
-80
-0.1
-0.1
d
C
-80
-80
MPSA55
MPSA56
MPSA55
MPSA56
MPSA55
MPSA56
(VCE= 50 Vdc, I =0)
(VCE= 60 Vdc, I =0)
B
B
MPSA55
MPSA56
(VCE= -60 Vdc, I =0)
(VCE= -80 Vdc, I =0)
B
B
Current-Gain-Bandwidth Product
(IC= -10 mAdc, VCE= -2.0 Vdc, f=100 MHz)
fT
MHz
Collector-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -10 mAdc)
Base-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -10 mAdc)
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
-
-
-
-
-
100
-
MPSA55
MPSA56
(IC= -100 mAdc, VCE=1.0 Vdc)
DC Current Gain
100
-
(1)
-0.25
-1.2
-
TYP
-
WEITRON
http://www.weitron.com.tw
F IG 1. C urrent-G ain
B andwidth P roduct
F IG 2. C apacitance
I
C
, COLLECTOR CURRENT (mA)
-100
-200
-10
200
100
70
50
20
V
R
, REVERSE VOL TAGE (VOLTS)
-1.0
-100
-0.1
100
70
50
30
20
10
-2.0
V
CE
= -2.0 V
T
J
= 25 C
f T
,
C
U
R
R
E
N
T
-
G
A
I
N
-
B
A
N
D
W
I
D
T
H
P
R
O
D
U
C
T
(
M
H
z
)
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
-2.0 -3.0
-5.0 -7.0
-20 -30
-50 -70
30
7.0
5.0
-0.2
-0.5
-5.0
-10 -20
-50
T
J
= 25 C
C
obo
MPSA55
MPSA56
WEITRON
http://www.weitron.com.tw
F IG 3. DC C urrent G ain
-2.0
-500
-0.5
I
C
, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
-10
,
D
C
C
U
R
R
E
N
T
G
A
I
N
T
J
= 125 C
-1.0
-5.0
V
CE
= -1.0 V
-20
-100
-50
-200
h
F
E
25 C
-55 C
F IG 4. " ON" Voltages
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
-10
-500
-1.0
I
C
, COLLECTOR CURRENT (mA)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-100
T
J
= 25 C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -1.0 V
-0.5
-2.0
-5.0
-200
-20
-50
F IG 5. C ollector S aturation R egion
I
B
, BASE CURRENT (mA)
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
V
C
E
-0.1
-10
-0.05
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0
T
J
= 25 C
-50
I
C
=
-100 mA
I
C
=
-50 mA
I
C
=
-250 mA
I
C
=
-500 mA
I
C
=
-10 mA
-20
-2.0
-5.0
-0.2
-0.5
F IG 6. B as e-E mitter Temperature
C oefficient
I
C
, COLLECTOR CURRENT (mA)
R
V
B
,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
(
m
V
/
C
)
-100
-500
-0.5
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-10
R
VB
for V
BE
-1.0 -2.0
-5.0
-20
-50
-200
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