Switching Transistor NPN Silicon
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
Unit
Vdc
Vdc
Vdc
mAdc
600
Rating
MMBT4401=2X
Device Marking
WEITRON
MMBT4401
1
2
3
BASE
COLLECTOR
EMITTER
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 S, Duty Cycle 2.0%.
Collector-Emitter Breakdown Voltage
(3)
(I
C
=1.0mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=0.1mAdc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=0.1mAdc, I
C
=0)
Base Cutoff Current (V
CE
=35 Vdc, V
EB
=0.4 Vdc)
Collector Cutoff Current (V
CE
=35Vdc, V
EB
=0.4Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEV
I
CEX
0.1
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
Off C har acter istics
40
60
6.0
-
-
-
-
-
<
=
<
=
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
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Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
q
R JA
q
SOT-23
1
2
3
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
MMBT4401
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= 20 mAdc, VCE= 10 Vdc, f=100MHz)
Collector-Base Capacitance
(VCB= 5.0 Vdc, IE=0, f=1.0MHz)
Emitter-Base Capacitance
(VEB= 0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz)
Voltage Feeback Radio
(VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz)
Small-Signal Current Gain
(VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz)
Output Admittance
(VCE= 10Vdc, IC=1.0 mAdc, f=-1.0kHz)
fT
Ccb
Ceb
hie
hre
hfe
hoe
250
-
-
-
0.1
1.0
40
1.0
6.5
MHz
pF
pF
k ohms
x 10-4
-
mhos
30
500
8.0
15
30
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc= 30 Vdc, V
BE
= 2.0 Vdc
Ic= 150 mAdc, I
B1
= 15 mAdc)
(Vcc= 30Vdc,
Ic= 150 mAdc, I
B1
=I
B2=
15 mAdc)
td
tr
ts
tf
-
-
-
-
15
20
225
30
ns
ns
WEITRON
DC Current Gain
(IC= 0.1 mAdc, VCE=1.0Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0Vdc)
(IC= 150 mAdc, VCE= 1.0Vdc)
(IC= 500 mAdc, VCE= 2.0Vdc)
Collector-Emitter Saturation Voltage
(3)
(IC= 150 mAdc, IB= 15mAdc)
(IC= 500 mAdc, IB= 50mAdc)
Base-Emitter Saturation Voltage
(3)
(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)
HFE
VCE(sat)
VBE(sat)
-
Vdc
Vdc
20
40
80
100
40
-
-
-
-
300
-
-
0.4
0.75
0.95
1.2
On Characteristics
0.75
-
(3)
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Figure 3. Capacitances
REVERSE VOLTAGE (VOL
TS)
7.0
10
20
30
5.0
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
0.1
2.0
5.0
10
20
2.0
30 50
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
Q
,
C
H
A
R
G
E
(
n
C
)
3.0
2.0
3.0
5.0
7.0
10
1.0
10
20
50 70 100
200
0.1
300
500
0.7
0.5
V
CC
= 30 V
I
C
/I
B
= 10
C
obo
Q
T
Q
A
25 C
105 C
T R A NS IE NT C HA R A C T E R IS T IC S
3.0
1.0
0.5
0.3
0.2
0.3
0.2
30
C
cb
Figure 5. Turn-On T ime
I
C
, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise and Fall Times
I
C
, COLLECTOR CURRENT (mA)
t
,
T
I
M
E
(
n
s
)
t
,
T
I
M
E
(
n
s
)
70
100
10
20
50 70 100
200 300
500
30
I
C
/I
B
= 10
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
EB
= 2.0 V
t
d
@ V
EB
= 0
20
30
50
5.0
10
7.0
70
100
10
20
50 70 100
200
300
500
30
V
CC
= 30 V
I
C
/I
B
= 10
t
r
t
f
Figure 1. Turn-On T ime
Figure 2. Turn-Off T ime
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
- 2.0 V
< 2.0 ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1.0 k
+ 30 V
200 W
W
W
C
S
* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 m s,
DUTY CYCLE 2.0%
1.0 kW
+ 30 V
200
C
S
* < 10 pF
- 4.0 V
-
-
-
-
MMBT4401
WEITRON
http://www.weitron.com.tw
Figure 1 1. Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
100
200
20
70
50
300
h f
e,
C
U
R
R
E
N
T
G
A
I
N
h i
e,
I
N
P
U
T
I
M
P
E
D
A
N
C
E
(
O
H
M
S
)
Figure 12. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
50 k
500
30
5.0 7.0
20 k
10 k
5.0 k
2.0 k
1.0 k
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
Figure 13. V oltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
0.2
10
Figure 14. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h
,
O
U
T
P
U
T
A
D
M
I
T
T
A
N
C
E
(
m
h
o
s
)
o
e
h
,
V
O
L
T
A
G
E
F
E
E
D
B
A
C
K
R
A
T
I
O
(
X
1
0
)
r
e
-
4
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
MMBT4401 UNIT 1
MMBT4401 UNIT 2
MMBT4401 UNIT 1
MMBT4401 UNIT 2
MMBT4401 UNIT 1
MMBT4401 UNIT 2
MMBT4401 UNIT 1
MMBT4401 UNIT 2
Figure 7. Storage T ime
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Fall T ime
I
C
, COLLECTOR CURRENT (mA)
20
30
50
70
100
10
5.0
7.0
t s
,
S
T
O
R
A
G
E
T
I
M
E
(
n
s
)
4
t f
,
F
A
L
L
T
I
M
E
(
n
s
)
10
20
50
70 100
200
300
500
30
100
200
30
70
50
300
10
20
50
70 100
200
300
500
30
t
s
4 = t
s
- 1/8 t
f
I
B1
= I
B2
I
C
/I
B
= 10 to 20
V
CC
= 30 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
u
WEITRON
http://www.weitron.com.tw
MMBT4401
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