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Электронный компонент: MBT3946DW

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Dual General Purpose Transistor
NPN+PNP Silicon
Maximum Ratings
Collector-Emitter Voltage
(NPN)
(PNP)
Collector-Base Voltage
(NPN)
(PNP)
Emitter-Base VOltage
(NPN)
(PNP)
Collector Current-Continuous
(NPN)
(PNP)
Symbol
VCEO
VCBO
VEBO
IC
Value
40
-40
60
-40
6.0
-5.0
Unit
Vdc
Vdc
Vdc
mAdc
200
Rating
MBT3946DW=46
Device Marking
WEITRON
MBT3946DW
http://www.weitron.com.tw
Thermal Resistance, Junction to Ambient
Total Package Dissipation
Junction and Storage, Temperature
Characteristics
TJ,Tstg
PD
Symbol
Max
150
833
-55 to +150
Unit
mW
C/W
C
Thermal Characteristics
R JA
q
SOT-363(SC-88)
3
4
5
1
2
6
NPN+PNP
1
2
3
6 5
4
-200
(1)
T
A
=25 C
WEITRON
MBT3946DW
2. Pulse Test:Pulse Width 300 S, Duty Cycle 2.0%.
Collector-Emitter Breakdown Voltage
(2)
(I
C
=1.0mAdc.I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10 Adc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10 Adc, I
C
=0)
Base Cutoff Current
(V
CE
=30 Vdc, V
EB
=3.0 Vdc)
Collector Cutoff Current
(V
CE
=30Vdc, V
EB
=3.0Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Off C har acter istics
40
60
6.0
-
-
-
-
-
-
-
-
-
-
<
=
<
=
http://www.weitron.com.tw
(NPN)
(I
C
=-1.0mAdc.I
B
=0) (PNP)
-40
(NPN)
(I
C
=-10 Adc, I
E
=0) (PNP)
-40
(I
E
=-10 Adc, I
C
=0)
(NPN)
(PNP)
-5.0
(NPN)
(V
CE
=-30 Vdc, V
EB
=-3.0 Vdc) (PNP)
-50
(V
CE
=-30Vdc, V
EB
=-3.0Vdc)
(NPN)
(PNP)
-50
1. Device Mounted on FR4 glass epoxy printed circuit board using the minimum recommeded footprint.
DC Current Gain
(IC= 0.1 mAdc, VCE=1.0Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0Vdc)
(IC= 50 mAdc, VCE= 1.0Vdc)
(IC= 100 mAdc, VCE= 1.0Vdc)
Collector-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0mAdc)
(IC= 50 mAdc, IB= 5.0mAdc)
Base-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)
HFE
VCE(sat)
VBE(sat)
-
-
-
-
-
-
-
-
-
-
-
-
-
Vdc
Vdc
40
70
100
60
30
-
-
300
-
-0.85
On Characteristics
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
(2)
(NPN)
(IC= -0.1 mAdc, VCE=-1.0Vdc)
(IC= -1.0 mAdc, VCE= -1.0 Vdc)
(IC= -10 mAdc, VCE= -1.0Vdc)
(IC= -50 mAdc, VCE= -1.0Vdc)
(IC= -100 mAdc, VCE= -1.0Vdc)
(PNP)
300
60
80
100
60
30
(NPN)
(IC= -10 mAdc, IB= -1.0mAdc)
(IC=-50 mAdc, IB= -5.0mAdc)
(PNP)
0.20
0.30
-0.25
-0.40
(IC= -10 mAdc, IB= -1.0 mAdc)
(IC= -50 mAdc, IB= -5.0 mAdc)
(NPN)
(PNP)
0.65
-0.65
0.85
0.95
-0.95
Small-signal Characteristics
Switching Characteristics
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f=100MHz)
Output Capacitance
(VCB= 5.0 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB= 0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz)
Voltage Feeback Radio
(VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz)
Small-Signal Current Gain
(VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz)
Output Admittance
(VCE= 10Vdc, IC=1.0 mAdc, f=1.0kHz)
Noise Figure
(VCE= 5.0Vdc, IC= 100 Adc, , RS=1.0k ohms, f=1.0kHz)
300
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
1.0
100
1.0
4.0
5.0
50
MBT3946DW
40
400
8.0
10
8.0
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc= 3.0 Vdc, V
BE
= -0.5 Vdc)
(Ic= 10 mAdc, I
B1
=I
B2=
1.0 mAdc)
(Vcc= 3.0 Vdc,Ic= 10 mAdc)
td
tr
ts
tf
35
35
35
35
ns
ns
ns
ns
(IC= -10 mAdc, VCE= -20 Vdc, f=100MHz)
(NPN)
(PNP)
fT
250
MHz
(VCB= -5.0 Vdc, IE=0, f=1.0MHz)
(NPN)
(PNP)
Cobo
pF
(VEB= -0.5 Vdc, IC=0, f=1.0MHz)
(NPN)
(PNP)
Cibo
10.0
pF
(VCE= -10 Vdc, IC=-1.0 mAdc, f=1.0 kHz)
(NPN)
(PNP)
hie
2.0
12
k ohms
(VCE= -10Vdc, IC=-1.0 mAdc, f=1.0 kHz)
(NPN)
(PNP)
hre
0.1
10
x 10-4
(VCE= -10Vdc, IC=-1.0 mAdc, , f=1.0 kHz)
(NPN)
(PNP)
hfe
100
400
(VCE= -10Vdc, IC=-1.0 mAdc, f=1.0kHz)
hoe
3.0
60
mhos
(VCE= -5.0Vdc, IC= -100 Adc, , RS=1.0k ohms, f=1.0kHz)
(NPN)
(PNP)
(NPN)
(PNP)
NF
4.0
dB
4.5
(Ic= 10 mAdc, I
B1
= 1.0 mAdc)
(Ic= -10 mAdc, I
B1
= -1.0 mAdc)
(Vcc= -3.0 Vdc, V
BE
= 0.5 Vdc)
(NPN)
(PNP)
(Vcc= -3.0 Vdc,Ic= -10 mAdc)
(NPN)
(PNP)
200
225
(Ic= -10 mAdc, I
B1
=I
B2=
-1.0 mAdc)
75
WEITRON
http://www.weitron.com.tw
MBT3946DW
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
10
7.0
5.0
3.0
2.0
1.0
Cibo
Cobo
Figure 4. Charge Data
IC COLLECTOR CURRENT (mA)
Q

C
H
A
R
G
E

(
p
C
)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
5000
3000
2000
1000
700
500
300
200
100
70
50
VCC=40V
IC / IB=10
QT
QA
TYPICAL TRANSIENT CHARACTERISTICS
TJ=25 C
TJ=125 C
<1ns
-0.5V
+10.9V
300 ns
DUTY CYCLE=2%
10k
CS<4 pF
+3V
275
-9.1V
<1ns
0
10<t1<500s
t1
+10.9V
DUTY CYCLE=2%
10k
1N916
275
CS<4 pF
+3V
*Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
WEITRON
http://www.weitron.com.tw
(NPN)
MBT3946DW
tr@VCC=3.0V
td@VOB=0V
Figure 5.Turn-On Time
IC COLLECTOR CURRENT
T
I
M
E

(
n
s
)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
IC / IB=10
40V
15V
2.0V
IC COLLECTOR CURRENT (mA)
t f

R
I
S
E

T
I
M
E

(
n
s
)
Figure 6. Rise Time
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
200
500
300
200
100
70
30
20
10
7
5
50
VCC =40V
IC / IB=10
Figure 8. Fall Time
IC COLLECTOR CURRENT (mA)
t f

F
A
L
L

T
I
M
E

(
n
s
)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
VCC=40V
IB1=IB2
IC / IB=20
IC / IB=10
Figure 7. Storage Time
IC COLLECTOR CURRENT (mA)
I,

S
T
O
R
A
G
E

T
I
M
E

(
n
s
)
s
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
IC / IB=20
IC / IB=20
IC / IB=10
IC / IB=10
t , =ts-1/8tf
IB1=IB2
s
WEITRON
Figure 10.
RS SOURSE RESISTANCE (kOHMS)
N
F

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
14
12
10
8
6
4
2
0
f =1.0kHz
IC=1.0mA
IC=0.5mA
IC=50 A
IC=100 A
Figure 9.
f FREQUENCY (kHz)
N
F

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
0.1
0.2
0.4
1.0 2.0
4.0
10
20
40
100
12
10
8
6
4
2
0
SOURCE RESISTANCE=200
IC=1.0 mA
SOURCE RESISTANCE=200
IC=0.5 mA
SOURCE RESISTANCE=500
IC=100A
SOURCE RESISTANCE=1.0k
IC=50A
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE=5.0 Vdc. TA=25 C, Bandwidth=1.0Hz)
http://www.weitron.com.tw
(NPN)
MMBT3904W
WEITRON
Figure 11. Current Gain
IC COLLECTOR CURRENT (mA)
h
f
e

C
U
R
R
E
N
T

G
A
I
N
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
300
200
100
70
50
30
Figure 13. Input Impedance
IC COLLECTOR CURRENT (mA)
h f
e
IN
P
U
T

I
M
P
E
D
A
N
C
E

(
k

O
H
M
S
)
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
10
5.0
2.0
1.0
0.5
0.2
Figure 14. Voltage Feedback Radio
IC COLLECTOR CURRENT (mA)
h f
e
V
O
L
T
A
G
E

F
E
E
D
B
A
C
K

R
A
D
I
O

(
X

1
0
-
4
)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
Fiugure 12. Output Admittance
IC COLLECTOR CURRENT (mA)
h o
e
O
U
T
P
U
T

A
D
M
I
T
T
A
N
C
E

(


m
h
o
s
)
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
100
50
20
10
5
2
1
Figure 15. DC Current Gain
IC COLLECTOR CURRENT (mA)
h f
e
D
C

C
U
R
R
E
N
T

G
A
I
N

(
N
O
R
M
A
L
I
Z
E
D
)
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2.0
1.0
0.7
0.5
0.3
0.2
0.1
TJ=+125 C
VCE=1.0V
+25 C
-55 C
TYPICAL STATIC CHARACTERISTICS
h PARAMETERS
(VCE=10 Vdc,m f=1.0 kHz, TA=25 C)
http://www.weitron.com.tw
MBT3946DW
WEITRON
http://www.weitron.com.tw
Figure 16. Collector Saturation Ragion
IB BASE CURRENT (mA)
V
C
E

C
O
L
L
E
C
T
O
R

E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
O
L
T
S
)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
0.8
0.6
0.4
0.2
0
Ic=1.0mA
10mA
30mA
100mA
TJ=25 C
Figure 17. "ON" Voltage
IC COLLECTOR CURRENT (mA)
V

V
O
L
T
A
G
E

(
V
O
L
T
S
)
1.0
2.0
5.0
10
20
50
100
200
1.2
1.0
0.8
0.6
0.4
0.2
0
TJ=25 C
VBE(sat)@IC/IB=10
VBE(sat)@VCE=1.0V
VCE(sat)@IC/IB=10
Figure 18. Temperature Coefficients
IC COLLECTOR CURRENT (mA)
C
O
E
F
F
I
C
I
E
N
T

(
m
V
/

C
)
0
20
40
60
80
100
120
140
160
180
200
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
qVC FOR VCE(sat)
qVB FOR VBE(sat)
+25 C to +125 C
+25 C to +125 C
-55 C to +25 C
-55 C to +25 C
(NPN)
MBT3946DW
WEITRON
<1ns
+0.5V
10.6V
300 ns
DUTY CYCLE=2%
10k
CS<4 pF
3V
275
+9.1V
<1ns
0
10<t1<500s
t1
10.9V
DUTY CYCLE=2%
10k
1N916
275
CS<4 pF
3V
*Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20 . Storage and Fall Time
Equivalent Test Circuit
Cobo
Cibo
Figure 21. Capacitance
REVERSEM BIAS (VOLTS)
C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
10
7.0
5.0
3.0
2.0
1.0
Q
T
Q
A
VCC=40V
IC/IB=10
Figure 22. Charge Data
IC COLLECTOR CURRENT (mA)
Q

C
H
A
R
G
E

(
p
C
)
5000
3000
2000
1000
500
300
700
100
70
50
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
TYPICAL TRANSIENT CHARACTERISTICS
TJ=25 C
TJ=125 C
Figure 24.Fall Time
IC COLLECTYOR CURRENT (mA)
t f

F
A
L
L

T
I
M
E

(
n
s
)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
VCC=40V
IB1=IB2
IC/IB=20
IC/IB=10
Figure 23. Turn-On Time
IC COLLECTOP CURRENT (mA)
T
I
M
E

(
n
s
)
15V
1.0
2.0 3.0 5.0 7.0 10
20 30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
IC/IB=10
tr@VCC=3.0V
td@VOB=0V
40V
2.0V
http://www.weitron.com.tw
(PNP)
Figure 29. Input Impedance
IC COLLECTOR CURRENT (MA)
h f
e
I
N
P
U
T

I
M
P
E
D
A
N
C
E

(
k

O
H
M
S
)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
Figure 30. Votage Feeback Ratio
IC COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5
0.7 1.0
2.0
3.0
5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
h f
e
V
O
L
T
A
G
E

F
E
E
B
A
C
K

R
A
T
I
O

(
X

1
0
x
4
)
MBT3946DW
WEITRON
Figure 28. Input Impedance
IC COLLECTOR CURRENT(mA)
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
7.0
1.0
h o
e
O
U
T
P
U
T

A
D
M
I
T
T
A
N
C
E

(


m
h
o
s
)
100
70
50
30
20
10
7
5
Figure 27. Current Gain
IC COLLECTOR CURRENT (mA)
h f
e
D
C

C
U
R
R
E
N
T

G
A
I
N
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 1.0
300
200
100
70
50
30
h PARAMETERS
(VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C)
Rg SOURCE RESISTANCE (k OHMS)
Figure 26.
N
F

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
12
10
8
6
4
2
0
f=1.0 kHz
IC=1.0mA
IC=0.5mA
IC=100A
f FREQUENCY (kHZ)
N
F

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
Figure 25.
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
5.0
4.0
3.0
2.0
1.0
0
SOURCE RESISTANCE=200
IC=1.0 mA
SOURCE RESISTANCE=200
IC=0.5 mA
SOURCE RESISTANCE=2.0 k
IC=50 A
SOURCE RESISTANCE=2.0 k
IC=100 A
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz)
IC=50A
http://www.weitron.com.tw
(PNP)
MBT3946DW
WEITRON
http://www.weitron.com.tw
Figure 32. Collector Saturation Region
IB BASE CURRENT (mA)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
0.8
0.6
0.4
0.2
0
V
C
E

C
O
L
L
E
C
T
O
R

E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
O
L
T
S
)
IC=1.0mA
10mA
30mA
100mA
TJ=25 C
TYPICAL STATIC CHARACTERISTICS
Figurer 31. DC Current Gain
IC COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2.0
1.0
0.7
0.5
0.3
0.2
0.1
h F
E

D
C

C
U
R
R
E
N
T

G
A
I
N

(
N
O
R
M
A
L
I
Z
E
D
)
TJ=+125 C
+25 C
-55 C
VCE=10V
Figure 34.Temperature Coefficients
IC COLLECTOR CURRENT (mA)
q v

T
E
M
P
E
R
A
T
U
R
E

C
O
E
F
F
I
C
I
E
N
T
S

(
m
V
A
C
)
qVC FOR VCE(sat)
FOR VBE(sat)
qVB
0
20
40
60
80
100
120
140
160
180
200
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
+25 C TO +125 C
+25 C TO +125 C
-55 C TO +25 C
-55 C TO +25 C
Figure 33. "ON" Voltages
IC COLLECTOR CURRENT (mA)
V


V
O
L
T
A
G
E

(
V
O
L
T
S
)
10
20
50
10
20
50
100
200
1.0
0.8
0.6
0.4
0.2
0
TJ=25 C
VBE(sat) @ IC/IB=10
VCE(sat) @ IC/IB=10
VBE(sat) @VCE=1.0V
(PNP)
MBT3946DW
WEITRON
http://www.weitron.com.tw
SOT-363 Package Outline Dimensions
Unit:mm
1
2
3
A
K
J
M
L
6
5
4
B
D
H
E
C
Dim
A
B
C
D
E
H
J
K
L
M
Min
0.10
1.15
2.00
0.30
1.80
-
0.80
0.25
0.10
0.65 REF
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.10
0.40
0.25
SOT-363