Dual General Purpose Transistor
PNP+PNP Silicon
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-60
-60
-5.0
Unit
Vdc
Vdc
Vdc
mAdc
-600
Rating
MBT2907ADW=2F
Device Marking
WEITRON
MBT2907ADW
Collector-Emitter Breakdown Voltage
(2)
(I
C
=-10mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=-10 uAdc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=10 uAdc, I
C
=0)
Base Cutoff Current (V
CE
=-30 Vdc, V
EB
=-0.5 Vdc)
Collector Cutoff Current (V
CE
=-30Vdc, V
EB
=-0.5Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
-50
-50
Vdc
Vdc
Vdc
nAdc
nAdc
Off C har acter istics
-60
-60
-5.0
-
-
-
-
-
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
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Total Device Dissipation T
A
=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Characteristics
TJ,Tstg
PD
Symbol
Max
200
625
-55 to +150
Unit
mW
C/W
C
Thermal Characteristics
R JA
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width 300uS, Duty Cycle 2.0%
<
=
<
=
SOT-363(SC-88)
1
2
3
6 5
4
3
4
5
1
2
6
PNP+PNP
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
MBT2907ADW
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -50 mAdc, VCE= -20 Vdc, f=100MHz)
Output Capacitance
(VCB= -10 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB=-2.0 Vdc, IC=0, f=1.0MHz)
fT
Cobo
Cibo
200
-
-
-
8.0
MHz
pF
pF
30
Switching Characteristics
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
(Vcc= -30 Vdc, Ic= -150 mAdc,
I
B1
= -15 mAdc)
t
t
t
t
-
-
-
-
45
10
40
100
ns
WEITRON
DC Current Gain
(IC= -100uAdc, VCE=-10Vdc)
(IC= -1.0 mAdc, VCE= -10Vdc)
(IC= -10 mAdc, VCE= -10Vdc)
(IC= -150 mAdc, VCE= -10Vdc)
(IC= -500 mAdc, VCE= -10Vdc)
Collector-Emitter Saturation Voltage
(IC= -150 mAdc, IB= -15mAdc)
(IC= -500 mAdc, IB= -50mAdc)
Base-Emitter Saturation Voltage
(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)
HFE
VCE(sat)
VBE(sat)
-
-
-
-
Vdc
Vdc
75
100
100
100
50
-
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
On Characteristics
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off
d
r
off
MBT2907ADW
WEITRON
http://www.weitron.com.tw
0
50
25
50
75
100
125
150
175
200
P
,
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
D
T , AMBIENT T EMPERATURE (C)
A
100
150
200
0
1.0
5.0
20
10
30
-0.1
-10
-1.0
-30
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
REVERSE
VOLT S (V)
Cobo
Cibo
I
,
BASE CURRENT (mA)
B
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
C
E
0.001
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
FIG.1 Max Power Dissipation vs
Ambient Temperature
FIG.2 Typical Capacitance
FIG.3 Typical Collector Saturation Region
MBT2907ADW
WEITRON
http://www.weitron.com.tw
1
10
1000
100
1
10
100
f
,
G
A
I
N
B
A
N
D
W
I
D
T
H
P
R
O
D
U
C
T
(
M
H
z
)
T
I , COLLECTOR CURRENT (mA)
C
V
= 5V
CE
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1
10
100
V
,
B
A
S
E
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
B
E
(
O
N
)
I , COLLECTOR
CURRENT (mA)
C
V
= 5V
CE
T = 150C
A
T = 25C
A
T = -50C
A
1
10
1000
100
1
10
1000
100
h
,
D
C
C
U
R
R
E
N
T
F
E
G
A
I
N
(
N
O
R
M
A
L
I
Z
E
D
)
I , COLLECTOR CURRENT (mA)
C
V
=
5
V
CE
T = 150C
A
T = 25C
A
T =
- 50C
A
0
0.1
0.2
0.3
0.6
0.5
0.4
1
10
100
1000
I , COLLECTOR
C URRENT (mA)
C
V
,
C
O
L
L
E
C
T
O
O
R
T
E
M
I
T
T
E
R
C
E
(
S
A
T
)
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
I
C
I
B
= 10
T = 150C
A
T = 25C
A
T = -50C
A
FIG.4 Collector Emitter Saturation Voltage vs
Collector Current
FIG.5 DC Current vs
Collector Current
FIG.6 Base Emitter Voltage vs
Collector Current
FIG.7 Gain Bandwidth Product vs
Collector Current
MBT2907ADW
WEITRON
http://www.weitron.com.tw
SOT-363 Package Outline Dimensions
Unit:mm
1
2
3
A
K
J
M
L
6
5
4
B
D
H
E
C
Dim
A
B
C
D
E
H
J
K
L
M
Min
0.10
1.15
2.00
0.30
1.80
-
0.80
0.25
0.10
0.65 REF
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.10
0.40
0.25
SOT-363
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