MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
Unit
Vdc
Vdc
Vdc
mAdc
Rating
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage(I =1 mAdc, I =0)
C
B
Collector-Base Breakdown Voltage(I =10 uAdc, I =0)
C
E
Emitter-Base Breakdown Voltage(I =10 uAdc, I =0)
E
C
Collector Cufoff Current(V =10Vdc, I =0)
CB
E
Emitter Cufoff Current(V =2Vdc, I =0)
EB
C
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
3.0
-
-
-
-
-
0.5
Vdc
Vdc
Vdc
uAdc
uAdc
2SC3838Q
WEITRON
http://www.weitron.com.tw
High-Frequency Amplifier Transistor
(Ta=25 C)
11
20
3.0
THERMAL CHARACTERISTICS
Total Device Dissipation FR-5 Board
T =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Symbol
Value
Unit
mW
Characteristics
T
200
1.6
625
C
Device Marking
2SC3838Q=R25
11
20
0.5
(1)
A
PD
mW/ C
C/W
R
JA
J,
Tstg
Junction and Storage, Temperature
-55 to +150
1. FR-5=1.0 0.75 0.062 in
I
I
I
I
2
1
3
COLLECTOR
EMITTER
BASE
NPN Silicon
50
1
2
3
SC-59
Transition Frequency
P
V
DC Current Gain
hFE
Cob
T
rbb'Cc
NF
V
GHz
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
-
-
-
-
-
-
-
-
-
2SC3838Q
WEITRON
http://www.weitron.com.tw
(I = 5 mAdc, V = 10 Vdc)
(I =10 mA, I =5 mA)
120
1.4
270
3.2
0.8
4
3.5
g
12
dB
0.5
1.5
TYP
Output Capacitance
Collector-Emitter Saturation Voltage
Collector-Base Time Constant
Noise Factor
(I = 10 mAdc, V =10 Vdc, f=500MHz)
C
C
C
CE(sat)
B
CB
(I = 10 mAdc, V =10 Vdc, f=31.8MHz)
C
CB
(I = 2 mAdc, V =10 Vdc, f=500MHz, R =50
)
C
CE
CE
(I = 0 Adc, V =10 Vdc, f=1MHz)
E
CB
f
F
Ps
2SC3838Q
WEITRON
http://www.weitron.com.tw
J
K
G
D
C
H
S
A
L
B
3
2
1
Top View
A
B
C
D
G
H
J
K
L
S
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
Dim Min
Max
All Dimension in mm
SC-59
SC-59 Outline Dimension
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