http://www.weitron.com.tw
WEITRON
SOT-23
1
2
3
2SC1623
NPN General Purpose Transistors
Symbol
V
CEO
V
CBO
V
EBO
Value
Unit
V
V
V
Rating
50
60
5.0
mW
Tj
200
Tstg
-55 to +150
+150
C
C
100
I
C
P
D
Collector Current - Continuous
mA
Emitter-Base Voltage
Collector-Emitter Voltage
Collector-Base Voltage
MAXIMUM RATINGS
(Ta=25C)
Storage Temperature
Junction Temperature
Total Device Dissipation
T
A
=25C
1/3
02-Aug-06
Lead(Pb)-Free
P b
250
-
-
V
2SC1623
Rank
Range
L4
L7
90-180
300-600
L6
200-400
135-270
0.3
WEITRON
http://www.weitron.com.tw
Characteristics
Symbol
Min
Max
Typ
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
5.0
-
-
-
-
-
0.1
V
V
V
A
A
50
60
0.1
-
-
-
-
-
ELECTRICAL CHARACTERISTICS
L5
Marking
L4
L7
L6
L5
SMALL-SIGNAL CHARACTERISTICS
Transition frequence
V
CE
= 6V, I
C
=10mA
MHz
fT
-
Collector-Emitter Saturation Voltage
I
C
= 100mA, I
B
= 10mA
V
CE(sat)
-
-
-
V
1.0
Base-Emitter Saturation Voltage
I
C
= 100mA, I
B
= 10mA
V
BE(sat)
-
90
600
DC Current Transfer Ration
V
CE
= 6V, I
C
= 1mA
h
FE
ON CHARACTERISTICS
Emitter Cutoff Current
V
EB
= 5V, I
C
= 0
Collector Cutoff Current
V
CB
= 60V, I
E
= 0
Emitter-Base Breakdown Voltage
I
E
= 100A, I
C
=0
Collector-Emitter Breakdown Voltage
I
C
= 1mA, I
B
= 0
Collector-Base Breakdown Voltage
I
C
= 100A, I
E
= 0
CLASSIFICATION h
FE
2/3
02-Aug-06
http://www.weitron.com.tw
WEITRON
-0.2
0
-500
-200
-100
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
V
CE
=-3
V
I
:
T
N
E
R
R
U
C
R
O
T
C
E
L
L
O
C
C
(
)
A
m
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propogation
Ta=100 C
25 C
-55 C
-1
-40
-80
-3
0
-20
-60
-100
0
-2
-4
-5
-200
-400
-10
-5
0
-100
-300
-500
0
I
:
T
N
E
R
R
U
C
R
O
T
C
E
L
L
O
C
C
(
)
A
m
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Ta=25 C
Fig.3 Ground emitter output
I
B
=
0A
-0.5mA
-1.0mA
-1.5mA
-2.0mA
-2.5mA
-3.0mA
-3.5mA
-4.0mA
-4.5mA
-5.0mA
Ta=25 C
I
:
T
N
E
R
R
U
C
R
O
T
C
E
L
L
O
C
C
(
)
A
m
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (I)
I
B
=
0A
-0.1mA
-0.2mA
-0.3mA
-0.4mA
-0.5mA
-0.6mA
-0.7mA
-0.8mA
-0.9mA
-1mA
500
1000
200
100
50
20
h
:
N
I
A
G
T
N
E
R
R
U
C
C
D
E
F
-1 -2
-5 -10 -20 -50 -100 -200 -500 -1000
V
CE
=-5V
-3V
-1V
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs collector current ()
Ta=25 C
500
1000
200
100
50
20
-1 -2
-5 -10 -20 -50 -100 -200 -500 -1000
h
:
N
I
A
G
T
N
E
R
R
U
C
C
D
E
F
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
V
CE
=-
3V
Ta
=
100 C
25 C
-
55 C
-0.1
V
:
E
G
A
T
L
O
V
N
O
I
T
A
R
U
T
A
S
R
O
T
C
E
L
L
O
C
)
t
a
s
(
E
C
(
)
V
-1 -2
-5 -10 -20
-50 -100 -200 -500
-1
-0.5
-0.2
-0.05
-0.02
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=
50
20
10
Fig.6 Collector emitter saturation
Ta
=
25 C
-0.05
-0.03
-0.02
-0.01
-1 -2
-5 -10 -20
-50 -100 -200 -500 -1000
-0.5
-0.3
-0.2
-0.1
-1.0
l
C
/l
B
=
10
N
O
I
T
A
R
U
T
A
S
R
O
T
C
E
L
L
O
C
V
:
E
G
A
T
L
O
V
)
t
a
s
(
E
C
(
)
V
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
Ta
=
100 C
25 C
-55 C
50
0.5
20
50
100
200
500
1000
1
2
5
10
f
:
Y
C
N
E
U
Q
E
R
F
N
O
I
T
I
S
N
A
R
T
T
(
)
z
H
M
EMITTER CURRENT : I
E
(mA)
Fig.8 Gain bandwidth product vs.
emitter current
Ta
=
25 C
V
CE
=-
5V
b
o
C
:
E
C
N
A
T
I
C
A
P
A
C
T
U
P
T
U
O
R
O
T
C
E
L
L
O
C
(
)
F
p
b
i
C
:
E
C
N
A
T
I
C
A
P
A
C
T
U
P
N
I
R
E
T
T
I
M
E
(
)
F
p
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.9 Collectur output capacitance vs.
collector-base voltage. Emitter input
capacitance vs. emitter -base voltage
-50
-0.5
-20
2
5
10
50
100
-1
-2
-5
-10
20
Ta
=
25 C
f
=
1MHz
I
E
=
0A
I
C
=
0A
Electrical characteristic curves
characteristics ()
collector current ()
voltage vs. collector current ()
voltage vs. collector current (
)
2SA1036K
3/4
02-Mar-06
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