1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8V-XCX
White Electronic Designs
2x512Kx8 DUALITHIC SRAM
ADVANCED*
FEATURES
Access Times 17, 20, 25, 35, 45, 55ns
Evolutionary, Corner Power/Ground Pinout
Packaging:
32 pin, Hermetic Ceramic DIP (Package 300)
Organized as two banks of 512Kx8
Commercial, Industrial and Military Temperature
Ranges
3.3V Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
Output Enable Internally tied to GND.
* This data sheet describes a product that is developmental, is not
qualified and is subject to change or cancellation without notice.
October 2002 Rev. 2
NOTE:
1. CS
1
and CS
2
are used to select the lower and upper 512Kx8
of the device. CS
1
and CS
2
must not be enabled at the same
time.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
CC
A15
A17
WE
A13
A8
A9
A11
CS2
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
P
IN
C
ONFIGURATION
FOR WS1M8V-XCX
32 DIP
TOP VIEW
B
LOCK
D
IAGRAM
512K x 8
512K x 8
A0-18
WE
CS1
CS2
I/O0-7
(1)
(1)
A
0-18
Address Inputs
I/O
0-7
Data Input/Output
CS
1-2
Chip Selects
WE
Write Enable
V
CC
+3.3V Power Supply
GND
Ground
P
IN
D
ESCRIPTION
2
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WS1M8V-XCX
White Electronic Designs
T
RUTH
T
ABLE
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
Symbol
Min
MaxUnit
Operating Temperature
T
A
-55
+125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND
V
G
-0.5
+4.6
V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
5.5
V
CS
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
L
Write
Data In
Active
NOTE: OE is internally tied to GND.
R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Symbol
Condition
MaxUnit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
28
pF
Output capicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
28
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Min
MaxUnit
Supply Voltage
V
CC
3.0
3.6
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.3
+0.8
V
Operating Temp. (Mil.)
T
A
-55
+125
C
C
APACITANCE
(T
A
= +25C)
DC C
HARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55C
TO
+125C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
I
LI
V
CC
= 3.6, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LO
1
CS = V
IH
, V
OUT
= GND to V
CC
10
A
Operating Supply Current
I
CC
1
CS = V
IL
, f = 5MHz, Vcc = 3.6
160
mA
Standby Current
I
SB
1
CS = V
IH
, f = 5MHz, Vcc = 3.6
30
mA
Output Low Voltage
V
OL
I
OL
= 8.0mA
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0mA
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V , V
IL
= 0.3V
1. OE is internally tied to GND.
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8V-XCX
White Electronic Designs
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75 W.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC T
EST
C
IRCUIT
AC T
EST
C
ONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 2.5
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
AC C
HARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55C
TO
+125C)
Parameter
Symbol
-17
-20
-25
-35
-45
-55
Units
Read Cycle
Min
MaxMin
MaxMin
MaxMin
MaxMin
MaxMin
Max
Read Cycle Time
t
RC
17
20
25
35
45
55
ns
Address Access Time
t
AA
17
20
25
35
45
55
ns
Output Hold from Address Change
t
OH
0
0
0
0
0
0
ns
Chip Select Access Time
t
ACS
17
20
25
35
45
55
ns
Chip Select to Output in Low Z
t
CLZ
1
2
2
2
4
4
4
ns
Chip Disable to Output in High Z
t
CHZ
1
9
10
12
15
20
20
ns
1. This parameter is guaranteed by design but not tested.
2. OE is internally tied to GND.
AC C
HARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55C
TO
+125C)
Parameter
Symbol
-17
-20
-25
-35
-45
-55
Units
Write Cycle
Min
MaxMin
MaxMin
MaxMin
MaxMin
Max Min Max
Write Cycle Time
t
WC
17
20
25
35
45
55
ns
Chip Select to End of Write
t
CW
14
14
15
25
35
50
ns
Address Valid to End of Write
t
AW
14
14
15
25
35
50
ns
Data Valid to End of Write
t
DW
9
10
10
20
25
25
ns
Write Pulse Width
t
WP
14
14
15
25
35
40
ns
Address Setup Time
t
AS
0
0
0
0
0
0
ns
Address Hold Time
t
AH
0
0
0
0
5
5
ns
Output Active from End of Write
t
OW
1
2
3
4
4
5
5
ns
Write Enable to Output in High Z
t
WHZ
1
9
9
10
15
15
25
ns
Data Hold Time
t
DH
0
0
0
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
4
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WS1M8V-XCX
White Electronic Designs
WS32K32-XHX
TIMING WAVEFORM - READ CYCLE
WRITE CYCLE - CS CONTROLLED
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
CLZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS = V
IL
, WE = V
IH
)
t
AA
t
OH
t
RC
DATA VALID
PREVIOUS DATA VALID
NOTE:OE is internally tied to GND.
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8V-XCX
White Electronic Designs
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) 0.4 (0.016)
PIN 1 IDENTIFIER
0.84 (0.033)
0.4 (0.014)
4.34 (0.171) 0.79 (0.031)
15.04 (0.592)
0.3 (0.012)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M = Military Screened -55C to +125C
I = Industrial
-40C to +85C
C = Commercial
0C to +70C
PACKAGE:
C = Ceramic 0.600" DIP (Package 300)
ACCESS TIME (ns)
Low Voltage Supply 3.3V 10%
ORGANIZATION, two banks of 512K x 8
SRAM
WHITE ELECTRONIC DESIGNS CORP.
W S 1M8 V - XXX C X X
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