Document : 1G5-0163
Rev.1
Page 1
VIS
VG26(V)(S)18160CJ
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Description
The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabri-
cated with an advanced submicron CMOS technology and designed to operate from a single 5V
only or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
backup, portable electronic application. A new refresh feature called " self-refresh " is supported
and very slow CBR cycles are being performed. It is packaged in JEDEC standard 42 - pin plas-
tic SOJ.
Features
Single 5V (
%) or 3.3V (+10%,-5%) only power supply
High speed t
RAC
access time : 50/60 ns
Low power dissipation
- Active mode : 5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
Fast Page Mode access
I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
1024 refresh cycles in 16 ms (Std) or 128ms (S - version)
4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
10
Document : 1G5-0163
Rev.1
Page 2
VIS
VG26(V)(S)18160CJ
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Pin Description
Pin Name
Function
A0 - A9
Address inputs
- Row address A0 - A9
- Column address A0 - A9
- Refresh address A0 - A9
DQ1 ~ DQ16
Data - in/data - out
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
OE
Output enable
V
cc
Power (+ 5V or + 3.3V)
V
ss
Ground
Pin Configuration
42-Pin 400mil Plastic SOJ
VCC
1
DQ1
2
DQ2
3
DQ3
4
DQ4
5
VCC
6
DQ5
7
DQ6
8
DQ7
9
DQ8
10
NC
11
NC
12
WE
13
RAS
14
NC
15
A0
16
A1
17
A2
18
A3
19
VCC
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
24
23
22
21
VSS
DQ16
DQ15
DQ14
DQ13
VSS
DQ12
DQ11
DQ10
DQ9
LCAS
UCAS
OE
A8
A7
A6
A5
A4
VSS
NC
V
G
2
6
(
V
)
(
S
)
1
8
1
6
0
C
J
NC
41
42
A9
26
25
Document : 1G5-0163
Rev.1
Page 3
VIS
VG26(V)(S)18160CJ
1,048,576 x 16 - Bit
CMOS Dynamic RAM
WE
LCAS
UCAS
NO.2 CLOCK
GENERATOR
CAS
COLUMN-
ADDRESS
BUFFERS (10)
REFRESH
CONTROLLER
REFRESH
COUNTER
BUFFERS (10)
ADDRESS
ROW -
NO.1 CLOCK
GENERATOR
A0
RAS
A1
A2
A3
A4
A5
A6
A7
A9
CONTROL
LOGIC
DATA - IN BUFFER
DATA - OUT
BUFFER
OE
DQ1
.
DQ16
.
COLUMN
DECODER
1024
SENSE AMPLIFIERS
I/0 GATING
1024x16
1024 x 1024 x 16
MEMORY
ARRAY
1
0
2
4
R
O
W
D
E
C
O
D
E
R
Vcc
Vss
Block Diagram
A8
Document : 1G5-0163
Rev.1
Page 4
VIS
VG26(V)(S)18160CJ
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Truth Table
Notes : 1. EARLY WRITE only.
FUNCTION
RAS
CAS
WE
OE
ADDRESSES
DQ
S
Notes
ROW
COL
STANDBY
H
X
X
X
X
High - Z
READ
L
L
H
L
ROW
COL Data - Out
WRITE : (EARLY
WRITE)
L
L
L
X
ROW
COL Data - In
READ WRITE
L
L
ROW
COL Data - Out, Data - In
PAGE -
MODE READ
1st Cycle
L
H
L
ROW
COL Data - Out
2st
Cycle
L
H
L
n/a
COL Data - Out
PAGE -
MODE WRITE
1st Cycle
L
L
X
ROW
COL Data - In
2st
Cycle
L
L
X
n/a
COL Data - In
PAGE - MODE
READ - WRITE
1st Cycle
L
ROW
COL Data - Out, Data - In
2st
Cycle
L
n/a
COL Data - Out, Data - In
HIDDEN
REFRESH
READ
L
H
L
ROW
COL Data - Out
WRITE
L
L
X
ROW
COL Data - In
1
RAS - ONLY REFRESH
L
H
X
X
ROW
n/a
High - Z
CBR REFRESH
L
H
X
X
X
High - Z
H
X
H
L
L
H
H
L
H
L
H
L
H
L
H
L
H
L
L
H
H
L
H
L
L
H
L
H
L
L
H
L
H
L
Document : 1G5-0163
Rev.1
Page 5
VIS
VG26(V)(S)18160CJ
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Absolute Maximum Rating
Recommended DC Operating Conditions
Capacitance
Ta = 25C, V
CC
= % or 3.3V(+10%,-5%), f = 1MHz
Note : 1. Capacitance measured with effective capacitance measuring method.
2. CAS = V
IH
to disable Dout.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss 5V
3.3V
V
T
-1.0 to + 7.0
-0.5 to + 4.6
V
Supply voltage relative to Vss 5V
3.3V
V
cc
-1.0 to + 7.0
-0.5 to + 4.6
V
Short circuit output current
I
OUT
50
mA
Power dissipation
P
D
1.0
W
Operating temperature
T
OPT
0 to + 70
C
Storage temperature
T
STG
-55 to + 125
C
Parameter/Condition
Symbol
5 Volt Version
3.3 Volt Version
Unit
Min
Typ
Max
Min
Typ
Max
Supply Voltage
V
cc
4.5
5.0
5.5
3.15
3.3
3.6
V
Input High Voltage, all inputs
V
IH
2.4
-
V
CC
+ 1.0
2.0
-
V
CC
+ 0.3
V
Input Low Voltage, all inputs
V
IL
-1.0
-
0.8
-0.3
-
0.8
V
Parameter
Symbol
Typ
Max
Unit
Note
Input capacitance (Address)
C
l1
-
5
pF
1
Input capacitance
(RAS, CAS, OE, WE)
C
l2
-
7
pF
1
Output capacitance
(Data - in, Data - out)
C
I/O
-
7
pF
1,2
5V 10
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