DG2034
Vishay Siliconix
New Product
Document Number: 72418
S52245--Rev. B, 24-Oct-05
www.vishay.com
1
Single 4:1 Low r
ON
Multiplexers
FEATURES
D Low Voltage Operation (1.8 to 5.5 V)
D Low On-Resistance - r
DS(on)
: 4
W
D Off-Isolation and Crosstalk: 55 dB @ 10 MHz
D Fast Switch 25 ns t
ON
D Low Charge Injection Q
INJ
: 4.7 pC
D Low Power Consumption 4 mW
BENEFITS
D High Accuracy
D High Bandwidth
D TTL and Low Voltage Logic
Compatibility
D Low Power Consumption
D Reduced PCB Space
APPLICATIONS
D Mixed Signal Routing
D Portable and Battery Operated
Systems
D Low Voltage Data Acquisition
D Modems
D PCMCIA Cards
DESCRIPTION
The DG2034 is a low voltage, low r
ON
, high bandwidth single
4 to 1 analog multiplexer designed for high performance
switching of analog and video signals. Combining low power;
fast switching; low on-resistance, flatness and matching; and
small physical size, the DG2034 is ideal for portable and
battery applications.
Built on Vishay Siliconix's low voltage CMOS process, the
DG2034 has an epitaxial layer which prevents latchup.
Break-before-make is guaranteed.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
A1
S2
COM
1
2
3
10
9
Top View
A0
S1
GND
8
MSOP-10
S4
V+
4
5
7
S3
EN
6
Logic
Logic
GND
COM
S3
S4
S1
S2
1
2
3
9
8
7
4
5
6
12
11
10
EN
NC
V+
Top View
12-Pin QFN (3 X 3 mm)
A0
NC
A1
TRUTH TABLE
A1
A0
EN
ON Switch
X
X
0
None
0
0
1
S1
0
1
1
S2
1
0
1
S3
1
1
1
S4
ORDERING INFORMATION
Temp Range
Package
Part Number
40 to 85
C
MSOP-10
DG2034DQT1E3
-40 to 85
C
12-Pin QFN (3 x 3 mm)
DG2034DNT1E4
DG2034
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72418
S52245--Rev. B, 24-Oct-05
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
-0.3 to +6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
X,
E
N,
S
X
, COM
a
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
#50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current
#100 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1ms, 10% duty cycle)
Power Dissipation (Package)
b
QFN-12 (3 x 3 mm)
c
850 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MSOP-10
320 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature (D Suffix)
-65 to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
X
, D
X
, EN or A
X
exceeding V+ or V- will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 4.0 mV/
_C above 70_C.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
40 to 85
_C
Parameter
Symbol
V+ = 3 V,
"10%, V
AL
= 0.4, V
AH
= 2.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
0
V+
V
On-Resistance
r
ON
V+ = 2.7 V, V
COM
= 0.5 V/1.5 V/2.0 V
Room
Full
4
7
9
W
r
ON
Match
Dr
ON
V+ = 2.7 V, V
COM
= 0.5 V/1.5 V/2.0 V
I
S
= 10 mA
Room
0.1
0.3
W
r
ON
Flatness
d, f
r
ON
Flatness
S
Room
0.3
1.5
Off Leakage Current
g
I
S(off)
V+ = 3.3 V, V
S
= 1 V / 3 V
Room
Full
1
10
0.3
1
10
COM Off Leakage Current
g
I
COM(off)
V+ = 3.3 V, V
S
= 1 V / 3 V
V
COM
= 3 V / 1 V, V
EN
= 0 V
Room
Full
1
10
0.3
1
10
nA
Channel-On Leakage Current
g
I
COM(on)
V+ = 3.3 V
V
COM
= V
S
= 1 V / 3 V
Room
Full
1
10
0.3
1
10
Digital Control
Input Current
d
I
A
or I
EN
V
A/EN
= 0 or V+, See Truth Table
Full
1.0
1.0
mA
Input High Voltage
d
V
AH
or V
ENH
Full
2.0
V
Input Low Voltage
d
V
AL
or V
ENL
Full
0.4
V
Dynamic Characteristics
Turn-On Time
t
ON
Room
Full
25
35
45
Turn-Off Time
t
OFF
V
S
= 1.5 V, R
L
= 300
W
Room
Full
15
25
35
ns
Break-Before-Make Time
d
t
D
Room
10.5
ns
Transition Time
t
trans
V
S
= 1.5 V/0 V, V
S
= 0 V/1.5 V, R
L
= 300
W
Room
Full
30
45
55
Charge Injection
d
Q
INJ
C
L
= 1 nF, Vgen = 0 V, Rgen = 0
W
Room
4.7
pC
Off Isolation
d
OIRR
R
L
= 50
W C
L
= 5 pF
f = 1 MHz
Room
73
Off-Isolation
d
OIRR
R
L
= 50
W, C
L
= 5 pF
f = 10 MHz
Room
54
dB
Channel to Channel Crosstalk
d
X
TALK
R
L
= 50
W C
L
= 5 pF
f = 1 MHz
Room
77
dB
Channel-to-Channel Crosstalk
d
X
TALK
R
L
= 50
W, C
L
= 5 pF
f = 10 MHz
Room
59
Off Capacitance
d
C
S(off)
Room
14
COM Off Capacitance
d
C
COM(off)
V+ = 2.7 V, f = 1 MHz
Room
46
pF
COM On Capacitance
d
C
COM(on)
,
Room
67
p
Power Supply
Power Supply Range
V+
2.7
3.3
V
Power Supply Current
d
I+
V+ = 3.3 V, V
A/EN
= 0 or 3.3 V, See Truth Table
Full
1.0
mA
Notes:
a.
Room = 25
C, Full = as determined by the operating suffix.
b.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c.
Typical values are for design aid only, not guaranteed nor subject to production testing.
d.
Guarantee by design, not subjected to production test.
e.
V
A,
E
N
= input voltage to perform proper function.
f.
Difference of min and max values.
g.
Guaranteed by 5 V testing.
DG2034
Vishay Siliconix
New Product
Document Number: 72418
S52245--Rev. B, 24-Oct-05
www.vishay.com
3
SPECIFICATIONS (V+ = 5 V)
Test Conditions
Otherwise Unless Specified
Limits
40 to 85
_C
Parameter
Symbol
V+ = 5 V,
"10%, V
AL
= 0.8 or V
AH
= 2.4 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
0
V+
V
On-Resistance
r
ON
V+ = 4.5 V, V
COM
= 1.5 V/2.5 V/3.5 V
Room
Full
3
5.5
7
W
r
ON
Match
Dr
ON
V+ = 4.5 V, V
COM
= 1.5 V/2.5 V/3.5 V
I
S
= 10 mA
Room
0.16
0.5
W
r
ON
Flatness
d, f
r
ON
Flatness
Room
0.6
1.5
Off Leakage Current
I
S(off)
V+ = 5.5 V, V
S
= 1 V / 4.5 V
Room
Full
1
10
0.5
1
10
COM Off Leakage Current
I
COM(off)
V+ = 5.5 V, V
S
= 1 V / 4.5 V
V
COM
= 4.5 V / 1 V, V
EN
= 0 V
Room
Full
1
10
0.5
1
10
nA
Channel-On Leakage Current
I
COM(on)
V+ = 5.5 V, V
COM
= V
S
= 1 V / 4.5 V
Room
Full
1
10
0.5
1
10
Digital Control
Input Current
d
I
AH
or I
ENH
V
A
or V
EN
= 0 or V+, See Truth Table
Full
1.0
1.0
mA
Input High Voltage
d
V
AH
or V
ENH
Full
2.4
V
Input Low Voltage
d
V
AL
or V
ENL
Full
0.8
V
Dynamic Characteristics
Turn-On Time
t
ON
Room
Full
18
30
40
Turn-Off Time
t
OFF
V
S
= 3.0 V, R
L
= 300
W
Room
Full
12
20
30
ns
Break-Before-Make Time
d
t
D
Room
10.5
ns
Transition Time
t
trans
V
S
= 3 V/0 V, V
S
= 0 V/3 V, R
L
= 300
W
Room
Full
25
40
50
Off Isolation
d
OIRR
R
L
= 50
W C
L
= 5 pF
f = 1 MHz
Room
73
Off-Isolation
d
OIRR
R
L
= 50
W, C
L
= 5 pF
f = 10 MHz
Room
53.5
dB
Channel to Channel Crosstalk
d
X
TALK
R
L
= 50
W C
L
= 5 pF
f = 1 MHz
Room
77
dB
Channel-to-Channel Crosstalk
d
X
TALK
R
L
= 50
W, C
L
= 5 pF
f = 10 MHz
Room
60.2
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
gen
= 0 V, R
gen
= 0
W
Room
4.4
pC
Off Capacitance
d
C
S(off)
Room
13
COM Off Capacitance
d
C
COM(off)
V+ = 5.0 V, f = 1 MHz
Room
43
pF
COM On Capacitance
d
C
COM(on)
Room
64
p
Power Supply
Power Supply Range
V+
4.5
5.5
V
Power Supply Current
I+
V+ = 5.5 V, V
A/EN
= 0 or 5.5 V, See Truth Table
Full
1.0
mA
Notes:
a.
Room = 25
C, Full = as determined by the operating suffix.
b.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c.
Typical values are for design aid only, not guaranteed nor subject to production testing.
d.
Guarantee by design, not subjected to production test.
e.
V
A,
E
N
= input voltage to perform proper function.
f.
Difference of min and max values.
DG2034
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72418
S52245--Rev. B, 24-Oct-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1
10
100
1000
10000
75
50
25
0
25
50
75
100
125
75
50
25
0
25
50
75
100
125
0
2
4
6
8
10
12
0
1
2
3
4
5
6
V+ = 1.8 V
r
ON
vs. V
COM
and Supply Voltage
r
ON
vs. Analog Voltage and Temperature
V
COM
Analog Voltage (V)
Temperature (
_C)
Supply Current (pA)
Supply Current vs. Temperature
Leakage Current vs. Temperature
Temperature (
_C)
Leakage Current (pA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
A = 85
_C
B = 25
_C
C = 40
_C
V
COM
Analog Voltage (V)
A
C
I+
V+ = 5.5 V
V
COM
= 4.5 V
V
S
= 1.0 V
B
Supply Current vs. Input Switching Frequency
Input Switching Frequency (Hz)
10
100
1 K
10 K
100 K
1 M
10 M
1 n
10 n
100 n
m
m
m
1 m
10 m
1
10
100
1400
1200
1000
800
600
400
200
0
200
400
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Leakage vs. Analog Voltage
V
S
Analog Voltage (V)
I
COM(on)
Leakage Current (pA)
I
COM(off)
V+ = 2.7 V
V+ = 3.3 V
V+ = 5.5 V
A
C
B
V+ = 4.5 V
V+ = 2.7 V
V+ = 5.5 V
r
ON
On-Resistance (
W
)
r
ON
On-Resistance (
W
)
I+ Supply Current (A)
V+ = 5.5 V
V+ = 5.5 V
I
S(off)
10000
1000
100
I
COM( off )
I
COM( on )
I
S( off )
DG2034
Vishay Siliconix
New Product
Document Number: 72418
S52245--Rev. B, 24-Oct-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
5
10
15
20
25
30
80 60 40 20
0
20
40
60
80 100 120 140
120
100
80
60
40
20
0
20
0.2
0.6
1.0
1.4
1.8
2.2
1
2
3
4
5
6
Switching
Threshold (V)
T
ALK
V+ Supply Voltage (V)
Switching Threshold vs. Supply Voltage
10 k
1 M
100 M
1 G
Frequency (Hz)
Insertion Loss, Off -Isolation
Crosstalk vs. Frequency
OIRR
Loss
10 M
Loss, OIRR, X
(dB)
V
T
Switching
T
ime (ns)
Switching Time vs. Temperature
t
ON
, t
OFF
Temperature (
_C)
X
TALK
t
ON
V+ = 5.5 V
t
ON
V+ = 3.3 V
t
OFF
V+ = 3.3 V
t
OFF
V+ = 5.5 V
100 k
V+ = 3.3 V
R
L
= 50
W
6
5
4
3
2
1
0
1
2
3
0
1
2
3
4
5
6
V
COM
Analog Voltage (V)
Charge Injection vs. Analog Voltage
Q Charge Injection (pC)
V+ = 3.3 V
V+ = 5.5 V
C
L
= 1 nF
10
15
20
25
30
35
80 60 40 20
0
20
40
60
80 100 120 140
Transistion Time vs. Temperature
t
TRANS
, V+ = 3.0 V
Temperature (
_C)
t
TRANS+
, V+ = 3.3 V
t
TRANS
, V+ = 5.5 V
t
TRANS+
, V+ = 5.5 V
R
L
= 300
W
V+ = 1.8 V
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