IN1, IN2
NO4
COM2
NO2
NC3
IN3, IN4
NC1
COM4
1
2
3
12
11
10
4
9
5
6
8
16
15
14
13
NC2 GND NO3 COM3
COM1 NO1
V+
NC4
Top View
DG2018DN
QFN-16 (3 X 3)
7
DG2018/2019
Vishay Siliconix
New Product
Document Number: 72342
S-31644--Rev. A, 01-Aug-03
www.vishay.com
1
Low Voltage, Dual DPDT and Quad SPDT Analog Switches
FEATURES
D Low Voltage Operation (1.8 V to 5.5 V)
D Low On Resistance
r
DS(on)
: 6 W @ 2.7 V
D Low Voltage Logic Compatible
DG2019: V
INH
= 1 V
D High Bandwidth: 150 MHz
D QFN-16 Package
BENEFITS
D Ideal for Both Analog and Digital
Signal Switching
D Reduced Power Consumption
D High Accuracy
D Reduced PCB Space
D Fast Switching
D Low Leakage
APPLICATIONS
D Cellular Phones
D Audio and Video Signal Routing
D PCMCIA Cards
D Battery Operated Systems
D Portable Instrumentation
DESCRIPTION
The DG2018 and DG2019 are low voltage, single supply
analog switches. The DG2018 is a dual
double-pole/double-throw (DPDT) with two control inputs that
each controls a pair of single-pole/double-throw (SPDT). The
DG2019 uses one control pin to operate four independent
SPDT switches.
When operated on a +3-V supply, the DG2018's control pins
are compatible with 1.8-V digital logic. The DG2019 has an
available feature of a V
L
pin that allows a 1.0-V threshold for the
control pin when V
L
is powered with 1.5 V.
Built on Vishay Siliconix's low voltage submicron CMOS
process, the DG2018 and DG2019 are ideal for high
performance switching of analog signals; providing low
on-resistance (6 W @ +2.7 V), fast speed (T
on
, T
off
@ 42 ns
and 16 ns), and a bandwidth that exceeds 150 MHz.
The DG2018 and DG2019 were designed to offer solutions
that extend beyond audio/video functions, to providing the
performance required for today's demanding mixed-signal
switching in portable applications.
An epitaxial layer prevents latch-up. Brake-before-make is
guaranteed for all SPDT's. All switches conduct equally well in
both directions when on, and blocks up to the power supply
level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
IN1, IN2
Logic
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
IN3, IN4
Logic
NC3 and NC4
NO3 and NO4
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85C
QFN-16 (3 x 3 mm)
DG2018DN
IN
NO4
COM2
NO2
NC3
V
L
NC1
COM4
1
2
3
12
11
10
4
9
5
6
8
16
15
14
13
NC2 GND NO3 COM3
COM1 NO1
V+
NC4
Top View
DG2019DN
QFN-16 (3 X 3)
7
DG2018/2019
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72342
S-31644--Rev. A, 01-Aug-03
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
NC1, 2, 3, and 4 NO1, 2, 3, and 4
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85C
QFN-16 (3 x 3 mm)
DG2019DN
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
-0.3 to +6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
"50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current
"100 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
-65 to 150C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)
b
QFN-16 (3 x 3 mm)
c
850 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 4.0 mW/_C above 70_C
DG2018/2019
Vishay Siliconix
New Product
Document Number: 72342
S-31644--Rev. A, 01-Aug-03
www.vishay.com
3
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
Parameter
Symbol
V+ = 3 V, "10%
(DG2018 Only) V
IN
= 0.5 or 1.4 V
e
(DG2019 Only) V
L
= 1.5 V, V
IN
= 0.4 or 1.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 2.7 V, V
COM
= 0.2 V/1.5 V
I
NO
, I
NC
= 10 mA
Room
Full
6
12
15
r
ON
Flatness
r
ON
Flatness
V+ = 2.7 V
V
COM
= 0 to V+ I
NO
I
NC
= 10 mA
Room
0.5
2
W
r
ON
Match Between Channels
Dr
ON
V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
0.6
3
Switch Off Leakage Current
I
NO(off)
,
I
NC(off)
V+ = 3.3 V, V
NO
, V
NC
=0.3 V/3 V
Room
Full
-1
-10
0.3
1
10
Switch Off Leakage Current
I
COM(off)
V+ = 3.3 V, V
NO
, V
NC
=0.3 V/3 V
V
COM
= 3 V/ 0.3 V
Room
Full
-1
-10
0.3
1
10
nA
Channel-On Leakage Current
I
COM(on)
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/ 3 V
Room
Full
-1
1.0
0.3
1
10
Digital Control
Input High Voltage
V
INH
DG2018
Full
1.4
Input High Voltage
V
INH
V
L
= 1.5 V
DG2019
Full
1.0
V
Input Low Voltage
V
INL
DG2018
Full
0.5
V
Input Low Voltage
V
INL
V
L
= 1.5 V
DG2019
Full
0.4
Input Capacitance
C
in
f = 1 MHz
Full
9
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
-1
1
mA
Dynamic Characteristics
Turn-On Time
t
ON
V
NO
or V
NC
= 2 0 V R
L
= 300 W C
L
= 35 pF
Room
Full
42
55
65
Turn-Off Time
t
OFF
V
NO
or V
NC
= 2.0 V, R
L
= 300 W, C
L
= 35 pF
Room
Full
16
25
35
ns
Break-Before-Make Time
t
d
V
NO
or V
NC
= 2.0 V, R
L
= 50 W, C
L
= 35 pF
Full
1
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0 W
Room
-1.46
pC
Off-Isolation
d
OIRR
R
L
= 50 W C
L
= 5 pF f = 1 MHz
Room
-54
dB
Crosstalk
d
X
TALK
R
L
= 50 W, C
L
= 5 pF, f = 1 MHz
Room
-53
dB
N
O
N
C
Off Capacitance
d
C
NO(off)
Room
9
N
O
, N
C
Off Capacitance
d
C
NC(off)
V
IN
= 0 or V+ f = 1 MHz
Room
9
pF
Channel On Capacitance
d
C
NO(on)
V
IN
= 0 or V+, f = 1 MHz
Room
30
pF
Channel-On Capacitance
d
C
NC(on)
Room
30
Power Supply
Power Supply Current
I+
V
IN
= 0 or V+
Full
0.01
1.0
mA
Notes:
a.
Room = 25C, Full = as determined by the operating suffix.
b.
Typical values are for design aid only, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
DG2018/2019
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72342
S-31644--Rev. A, 01-Aug-03
SPECIFICATIONS (V+ = 5 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
Parameter
Symbol
V+ = 5 V, "10%,
(DG2018 Only) V
IN
= 0.8 or 1.8 V
e
(DG2019 Only) V
L
= 1.5 V, V
IN
= 0.4 or 1.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 4.5 V, V
COM
= 3 V, I
NO
, I
NC
= 10 mA
Room
Full
4
8
10
r
ON
Flatness
r
ON
Flatness
V+ = 4.5 V
V
COM
= 0 to V+ I
NO
I
NC
= 10 mA
Room
0.6
1.2
W
r
ON
Match Between Channels
Dr
ON
V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
0.6
1.2
Switch Off Leakage Current
f
I
NO(off)
,
I
NC(off)
V+ = 5.5 V
Room
Full
-1
-10
0.03
1
10
Switch Off Leakage Current
f
I
COM(off)
V+ = 5.5 V
V
NO
, V
NC
= 1 V/4.5 V, V
COM
= 4.5 V/1 V
Room
Full
-1
-10
0.03
1
10
nA
Channel-On Leakage Current
f
I
COM(on)
V+ = 5.5 V, V
NO
, V
NC
= V
COM
= 1 V/4.5 V
Room
Full
-1
-10
0.03
1
10
Digital Control
Input High Voltage
V
INH
DG2018
Full
1.8
Input High Voltage
V
INH
V
L
= 1.5 V
DG2019
Full
1.0
V
Input Low Voltage
V
INL
DG2018
Full
0.8
V
Input Low Voltage
V
INL
V
L
= 1.5 V
DG2019
Full
0.4
Input Capacitance
C
in
Full
9
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
mA
Dynamic Characteristics
Turn-On Time
t
ON
V
NO
or V
NC
= 3 V R
L
= 300 W C
L
= 35 pF
Room
Full
44
48
52
Turn-Off Time
t
OFF
V
NO
or V
NC
= 3 V, R
L
= 300 W, C
L
= 35 pF
Room
Full
19
33
35
ns
Break-Before-Make Time
t
d
V
NO
or V
NC
= 3 V, R
L
= 50 W, C
L
= 35 pF
Full
1
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0 W
Room
-2.46
pC
Off-Isolation
d
OIRR
R
L
= 50 W C
L
= 5 pF f = 1 MHz
Room
-54
dB
Crosstalk
d
X
TALK
R
L
= 50 W, C
L
= 5 pF, f = 1 MHz
Room
-53
dB
Source Off Capacitance
d
C
NO(off)
Room
7.5
Source-Off Capacitance
d
C
NC(off)
V
IN
= 0 or V+ f = 1 MHz
Room
7.5
pF
Channel On Capacitance
d
C
NO(on)
V
IN
= 0 or V+, f = 1 MHz
Room
30
pF
Channel-On Capacitance
d
C
NC(on)
Room
30
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
V
IN
= 0 or V+
Full
0.01
1.0
mA
Notes:
a.
Room = 25C, Full = as determined by the operating suffix.
b.
Typical values are for design aid only, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
f.
Not production tested.
DG2018/2019
Vishay Siliconix
New Product
Document Number: 72342
S-31644--Rev. A, 01-Aug-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-60
-40
-20
0
20
40
60
80
100
Supply Current vs. Input Switching Frequency
Input Switching Frequency (Hz)
I+
-
Supply Current (A)
0
2
4
6
8
10
0
1
2
3
4
5
6
r
ON
vs. V
COM
and Supply Voltage
V
COM
- Analog Voltage (V)
-
On-Resistance (
r
ON
W
)
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
r
ON
vs. Analog Voltage and Temperature
V
COM
- Analog Voltage (V)
-
On-Resistance (
r
ON
W
)
1
1000
10000
Supply Current vs. Temperature
-150
-125
-100
-75
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Leakage vs. Analog Voltage
V
COM
, V
NO
, V
NC
- Analog Voltage (V)
V+ = 2.7 V
Temperature (_C)
V+ = 5.5 V
V
IN
= 0 V
10
100
I+
-
Supply Current (pA)
0
10 M
2 M
10 mA
1 mA
100 nA
T = 25_C
I
COM
= 10 mA
V+ = 5.5 V
25_C
V+ = 5.5 V
-40_C
85_C
-60
-40
-20
0
20
40
60
80
100
1
1000
10000
Leakage Current vs. Temperature
Temperature (_C)
V+ = 5 V
10
100
Leakage Current (pA)
I
NO(off)
, II
NC(off)
I
COM(off)
I
COM(on)
Leakage Current (pA)
V
+
= 3.3 V
I
NO(off)
, I
NC(off)
I
COM(off)
I
COM(on)
10 nA
0
1 mA
4 M
6 M
8 M
V+ = 2.7 V
85_C
25_C
-40_C
10 mA
100 mA
V+ = 3.3 V
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