BYX82...BYX86
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
1 (5)
Document Number 86052
Silicon Mesa Rectifiers
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
High surge current loading
Applications
Rectifier, general purpose
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
BYX82
V
R
=V
RRM
200
V
g
=Repetitive peak reverse voltage
BYX83
V
R
=V
RRM
400
V
BYX84
V
R
=V
RRM
600
V
BYX85
V
R
=V
RRM
800
V
BYX86
V
R
=V
RRM
1000
V
Peak forward surge current
t
p
=10ms,
half sinewave
I
FSM
50
A
Repetitive peak forward current
I
FRM
10
A
Average forward current
T
amb
x
45
C
I
FAV
2
A
i
2
*trating
i
2
*t
8
A
2
*s
Junction and storage temperature range
T
j
=T
stg
65...+175
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=10mm, T
L
=constant
R
thJA
45
K/W
on PC board with spacing 25mm
R
thJA
100
K/W
BYX82...BYX86
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
2 (5)
Document Number 86052
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=1A
V
F
0.9
1.0
V
Reverse current
V
R
=V
RRM
I
R
0.1
1
m
A
V
R
=V
RRM
, T
j
=100
C
I
R
10
25
m
A
Diode capacitance
V
R
=4V, f=0.47MHz
C
D
20
pF
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
t
rr
2
4
m
s
Reverse recovery charge
I
F
=I
R
=1A, di/dt=5A/
m
s
Q
rr
3
6
m
C
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
0
20
40
60
80
120
R
Therm. Resist. Junction /
Ambient ( K/W
)
thJA
l Lead Length ( mm )
94 9572
5
10
15
25
30
20
100
l
l
T
L
=constant
Figure 1. Max. Thermal Resistance vs. Lead Length
0
400
800
1200
0
T
Junction
T
emperature ( C )
j
Reverse / Repetitive Peak Reverse Voltage ( V )
1600
94 9579
40
80
120
160
240
200
BYX
85
BYX
86
BYX
84
BYX
82
BYX
83
V
R
V
R RM
R
thJA
v
35K/W
R
thJA
v
57K/W
R
thJA
v
100K/W
Figure 2. Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
0
0.6
1.2
1.8
2.4
0.01
0.1
1
10
3.0
94 9573
I Forward Current (
A
)
F
V
F
Forward Voltage ( V )
Scattering Limits
T
j
= 25
C
T
j
=175
C
Figure 3. Forward Current vs. Forward Voltage
0
6
12
18
24
30
0.1
1
10
C Diode Capacitance ( pF )
D
V
R
Reverse Voltage ( V )
100
94 9574
f = 470kHz
T
j
= 25
C
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
BYX82...BYX86
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
4 (5)
Document Number 86052
1
10
100
1000
Z
Thermal Resistance for Pulse Cond. (K/W)
thp
t
p
Pulse Length ( s )
94 9577
I
FRM
Repetitive Peak
Forward Current ( A )
10
4
10
3
10
2
10
1
10
0
10
0
10
1
t
p
/T=0.5
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
T
amb
= 25
C
T
amb
= 45
C
T
amb
= 70
C
T
amb
= 100
C
Single Pulse
T
amb
= 125
C
T
amb
= 150
C
V
RRM
v200V
R
thJA
v57K/W
Figure 7. Thermal Response
1
10
100
1000
Z
Thermal Resistance for Pulse Cond. (K/W)
thp
t
p
Pulse Length ( s )
94 9576
I
FRM
Repetitive Peak
Forward Current ( A )
10
4
10
3
10
2
10
1
10
0
10
0
10
1
t
p
/T=0.5
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
T
amb
= 25
C
T
amb
= 45
C
70
C
100
C
Single Pulse
T
amb
= 125
C
V
RRM
v1000V
t
v10ms
R
thJA
v57K/W
Figure 8. Thermal Response
Dimensions in mm
Cathode Identification
3.6 max.
0.82 max.
4.2 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
technical drawings
according to DIN
specifications
94 9538
26 min.
26 min.
BYX82...BYX86
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
5 (5)
Document Number 86052
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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