BYW52...BYW56
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
1 (4)
Document Number 86049
Silicon Mesa Rectifiers
Features
D
Controlled avalanche characteristics
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
High surge current loading
D
Electrically equivalent diodes:
BYW52 1N5059 BYW53 1N5060
BYW54 1N5061 BYW55 1N5062
Applications
Rectifier, general purpose
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
BYW52
V
R
=V
RRM
200
V
g
=Repetitive peak reverse voltage
BYW53
V
R
=V
RRM
400
V
BYW54
V
R
=V
RRM
600
V
BYW55
V
R
=V
RRM
800
V
BYW56
V
R
=V
RRM
1000
V
Peak forward surge current
t
p
=10ms, half sinewave
I
FSM
50
A
Repetitive peak forward current
I
FRM
12
A
Average forward current
=180
I
FAV
2
A
Pulse avalanche peak power
t
p
=20
m
s half sinus wave,
T
j
=175
C
P
R
1000
W
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
I
(BR)R
=1A, T
j
=175
C
E
R
20
mJ
i
2
* trating
i
2
*t
8
A
2
*s
Junction and storage
temperature range
T
j
=T
stg
55...+175
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=10mm, T
L
=constant
R
thJA
45
K/W
on PC board with spacing 25mm
R
thJA
100
K/W
BYW52...BYW56
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
2 (4)
Document Number 86049
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=1A
V
F
0.9
1.0
V
Reverse current
V
R
=V
RRM
I
R
0.1
1
m
A
V
R
=V
RRM
, T
j
=100
C
I
R
5
10
m
A
Breakdown voltage
I
R
=100
m
A, t
p
/T=0.01, t
p
=0.3ms
V
(BR)
1600
V
Diode capacitance
V
R
=0, f=0.47MHz
C
D
50
pF
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
t
rr
4
m
s
y
I
F
=1A, di/dt=5A/
m
s, V
R
=50V
t
rr
4
m
s
Reverse recovery charge
I
F
=1A, di/dt=5A/
m
s
Q
rr
200
nC
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
0
20
40
60
80
120
R
Therm. Resist. Junction /
Ambient ( K/W
)
thJA
l Lead Length ( mm )
94 9101
5
10
15
25
30
20
100
l
l
T
L
=constant
Figure 1. Typ. Thermal Resistance vs. Lead Length
0
40
80
120
160
0
0.2
0.4
0.6
0.8
1.2
I
A
verage
Forward
Current
(
A
)
FA
V
T
amb
Ambient Temperature (
C )
200
94 9163
1.0
V
R
= V
R RM
R
thJA
=100K/W
PCB
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
0
0
0.4
0.8
1.2
1.6
2.0
I
A
verage
Forward
Current
(
A
)
FA
V
T
amb
Ambient Temperature (
C )
94 9172
40
80
120
160
200
V
R
= V
R RM
R
thJA
v45K/W
l=12mm
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
0
40
80
120
160
0.1
1
10
100
1000
T
j
Junction Temperature (
C )
200
94 9176
m
I Reverse Current (
A
)
R
Scattering Limit
V
R
= V
R RM
Figure 4. Reverse Current vs. Junction Temperature
BYW52...BYW56
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
3 (4)
Document Number 86049
0
0.6
1.2
1.8
2.4
0.01
0.1
1
10
100
I Forward Current (
A
)
F
V
F
Forward Voltage ( V )
3.0
94 9175
T
j
= 25
C
T
j
= 175
C
Figure 5. Typ. Forward Current vs. Forward Voltage
0
20
40
60
80
0.1
1
10
C Diode Capacitance ( pF )
D
V
R
Reverse Voltage ( V )
100
94 9177
f = 0.47 MHz
T
j
= 25
C
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
1
10
100
1000
Z
Thermal Resistance for Pulse Cond. (K/W)
thp
t
p
Pulse Length ( s )
94 9178
10
5
10
4
10
3
10
2
10
1
10
0
10
1
10
2
I
FRM
Repetitive Peak
Forward Current ( A )
10
0
10
1
V
R RM
= 1000 V, R
thJA
=100K/W
t
p
/T=0.5
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
T
amb
= 25
C
T
amb
= 45
C
T
amb
= 60
C
T
amb
= 70
C
T
amb
= 100
C
Figure 7. Thermal Response
Dimensions in mm
Cathode Identification
3.6 max.
0.82 max.
4.2 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
technical drawings
according to DIN
specifications
94 9538
26 min.
26 min.
BYW52...BYW56
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
4 (4)
Document Number 86049
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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