Si3585DV
Vishay Siliconix
Document Number: 71184
S-03512--Rev. B, 04-Apr-01
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
0.125 @ V
GS
= 4.5 V
2.4
N-Channel
20
0.200 @ V
GS
= 2.5 V
1.8
0.200 @ V
GS
= 4.5 V
1.8
P-Channel
20
0.340 @ V
GS
= 2.5 V
1.2
D
1
G
1
S
1
N-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
20
Gate-Source Voltage
V
GS
"
12
"
12
V
_
T
A
= 25
_
C
2.4
2.0
1.8
1.5
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
1.7
1.4
1.3
1.2
Pulsed Drain Current
I
DM
8
7
A
Continuous Source Current (Diode Conduction)
a
I
S
1.05
0.75
1.05
0.75
T
A
= 25
_
C
1.15
0.83
1.15
0.83
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
0.59
0.53
0.59
0.53
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
t
v
10 sec
93
110
93
110
Maximum Junction-to-Ambient
a
Steady State
R
thJA
130
150
130
150
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
75
90
75
90
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si3585DV
Vishay Siliconix
www.vishay.com
2
Document Number: 71184
S-03512--Rev. B, 04-Apr-01
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
DS
= V
GS
, I
D
= 250
m
A
N-Ch
0.6
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
P-Ch
0.5
V
"
N-Ch
"
100
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
12 V
P-Ch
"
100
nA
V
DS
= 16 V, V
GS
= 0 V
N-Ch
1
V
DS
= 16 V, V
GS
= 0 V
P-Ch
1
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55
_
C
N-Ch
5
m
A
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55
_
C
P-Ch
5
V
DS
w
5 V, V
GS
= 4.5 V
N-Ch
5
On-State Drain Current
a
I
D(on)
V
DS
p
5 V, V
GS
= 4.5 V
P-Ch
5
A
V
GS
= 4.5 V, I
D
= 2.4 A
N-Ch
0.100
0.125
V
GS
= 4.5 V, I
D
= 1.8 A
P-Ch
0.160
0.200
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 1.8 A
N-Ch
0.160
0.200
W
V
GS
= 2.5 V, I
D
= 1.2 A
P-Ch
0.280
0.340
V
DS
= 5 V, I
D
= 2.4 A
N-Ch
5
Forward Transconductance
a
g
fs
V
DS
= 5 V, I
D
= 1.8 A
P-Ch
3.6
S
I
S
= 1.05 A, V
GS
= 0 V
N-Ch
0.80
1.10
Diode Forward Voltage
a
V
SD
I
S
= 1.05 A, V
GS
= 0 V
P-Ch
0.83
1.10
V
Dynamic
b
N-Ch
2.1
3.2
Total Gate Charge
Q
g
N-Channel
P-Ch
2.7
4.0
N-Channel
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 2.4 A
N-Ch
0.3
Gate-Source Charge
Q
gs
P-Channel
P-Ch
0.4
nC
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 1.8 A
N-Ch
0.4
Gate-Drain Charge
Q
gd
P-Ch
0.6
N-Ch
10
17
Turn-On Delay Time
t
d(on)
P-Ch
11
17
N-Channel
W
N-Ch
30
50
Rise Time
t
r
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
P-Ch
34
50
P-Channel
W
N-Ch
14
25
Turn-Off Delay Time
t
d(off)
P-Channel
V
DD
= 10 V, R
L
= 10
W
I
^
1 A, V
= 4.5 V, R = 6
W
P-Ch
19
30
ns
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
N-Ch
6
12
Fall Time
t
f
P-Ch
24
36
Source-Drain
I
F
= 1.05 A, di/dt = 100 A/
m
s
N-Ch
30
50
Source-Drain
Reverse Recovery Time
t
rr
I
F
= 1.05 A, di/dt = 100 A/
m
s
P-Ch
20
40
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
Si3585DV
Vishay Siliconix
Document Number: 71184
S-03512--Rev. B, 04-Apr-01
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
0
1
2
3
4
5
V
GS
= 4.5 thru 3.5 V
25
_
C
T
C
= 55
_
C
1.5 V
125
_
C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
2.5 V
3 V
2 V
0.0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
6
7
0.0
0.9
1.8
2.7
3.6
4.5
0.0
0.5
1.0
1.5
2.0
2.5
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
25
0
25
50
75
100
125
150
0
50
100
150
200
250
300
0
4
8
12
16
20
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 2.4 A
V
GS
= 4.5 V
I
D
= 2.4 A
V
GS
= 4.5 V
V
GS
= 2.5 V
Gate Charge
On-Resistance vs. Drain Current
Gate-to-Source V
oltage (V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C
Capacitance (pF)
V
GS
On-Resistance (
r
DS(on)
W
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
W
)
Si3585DV
Vishay Siliconix
www.vishay.com
4
Document Number: 71184
S-03512--Rev. B, 04-Apr-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
0.00
0.08
0.16
0.24
0.32
0.40
0
1
2
3
4
5
V
GS
Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
On-Resistance (
r DS(on)
W
)
I
D
= 2.4 A
I
D
= 1 A
1.2
1.5
0.1
1
10
0.00
0.3
0.6
0.9
T
J
= 25
_
C
T
J
= 150
_
C
Source-Drain Diode Forward Voltage
V
SD
Source-to-Drain Voltage (V)
Source Current (A)
I
S
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
2
1
0.1
0.01
10
3
10
2
1
10
600
10
1
10
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 87
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0.01
0
1
6
8
2
4
10
30
0.1
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
0.6
0.4
0.2
0.0
0.2
0.4
50
25
0
25
50
75
100
125
150
I
D
= 250
m
A
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
Temperature (
_
C)
Si3585DV
Vishay Siliconix
Document Number: 71184
S-03512--Rev. B, 04-Apr-01
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
0
2
4
6
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
1
2
3
4
5
6
7
0
2
4
6
8
10
0
1
2
3
4
5
0
90
180
270
360
450
0
4
8
12
16
20
V
GS
= 4.5 thru 4 V
25
_
C
T
C
= 55
_
C
C
rss
C
oss
C
iss
V
GS
= 4.5 V
V
GS
= 2.5 V
1.5 V
125
_
C
2 V
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
V
DS
Drain-to-Source Voltage (V)
C
Capacitance (pF)
On-Resistance (
r
DS(on)
W
)
I
D
Drain Current (A)
Capacitance
V
GS
= 3.6 V
2.5 V
3 V
3.5 V
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