UTC TF202
N-CHANNEL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R210-001,A
CAPACITOR MICROPHONE
APPLICATIONS
FEATURES
*Ultrasmall-sized package permitting TF202 appliedses to
be made small and slim.
*Especially suited for use in audio,telephone capacitor
microphones.
*Excellent voltage charactristic.
*Excellent transient characteristic.
*Adoption of FBET process.
SOT-113
1
3
2
1:SOURCE 2:DRAIN 3. GATE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER SYMBOL
RATING
UNIT
Gate Drain Voltage
V
GDO
-20 V
Gate Current
I
G
10
mA
Drain Current
I
D
1
mA
Power Dissipation
P
D
100
mW
Junctin Temperature
Tj
150
C
Storage Temperature
T
STG
-55~+150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Gate Drain Breakdown Voltage
B
(BR)GDO
I
G
=-100
A
-20
V
Gate Source Cut off Voltage
V
GS(off)
V
DS
=5V,I
D
=1
A
-0.2
-0.6 -1.2 V
Drain Current
I
DSS
V
DS
=5V,V
GS
=0 140
500
A
Forward Transfer Admittance
lY
FS
l V
DS
=5V,V
GS
=0,f=1KHz 0.5
1.2 mS
Input Capacitance
C
ISS
V
DS
=5V,V
GS
=0,f=1MHz
3.5
pF
Output Capacitance
C
RSS
V
DS
=5V,V
GS
=0,f=1MHz
0.65 pF
CLASSIFICATION OF I
DSS
RANK E4
E5
E6
I
DSS
(
A)
140-240 210-350 320-500
UTC TF202
N-CHANNEL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R210-001,A
TEST CIRCUIT(Ta=25
C)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Voltage Gain
Gv
V
IN
=10mV, f=1KHz
-3
dB
Reduced Voltage Characteristic
GvV
V
IN
=10mV, f=1KHz,
Vcc=4.5V
1.5V
-1.2
-3.5 dB
Frequency Characteristic
Gvf
f=1KHz to 110Hz
-1
dB
Input Resistance
Z
IN
f=1KHz
25
M
Output Resistance
Z
O
f=1KHz
700
Total Harmonic distortion
THD
V
IN
=30mV,
f=1KHz
1 %
Output Noise Voltage
V
NO
V
IN
=0, A CURVE
-110
dB
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