UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R203-012,A
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MJE2955T is designed for general
purpose of amplifier and switching applications.
TO-220
1
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
70 V
Collector-emitter voltage
V
CEO
60 V
Emitter-base voltage
V
EBO
5 V
Total Power Dissipation(Ta=25
C
)
Pc 75
W
Collector current
Ic
10
A
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
Base Current
IB
6
A
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-emitter breakdown voltage
BV
CEO
Ic=200mA 60
V
Collector-Base Breakdown Voltage
VB
CBO
Ic=10mA 70
V
Emitter-Base Breakdown Voltage
BV
EBO
IE=10mA 5
V
Collector cut-off current
I
CBO
I
CEO
I
CEX
V
CB
=70V
V
CE
=30V
V
CE
=70V,V
EB
(off)=1.5V
1
700
1
mA
A
mA
Emitter cut-off current
I
EBO
V
EB
=5V
5
mA
Collector-emitter saturation voltage
V
CE(SAT)1
V
CE(SAT)2
I
C
=4A,I
B
=0.4A
I
C
=10A,I
B
=3.3A
1.1
8.0
V
Baser-emitter on voltage
V
BE(ON)
V
CE
=4V,I
C
=4A
1.8
V
DC current gain
hFE1
hFE2
I
C
=4A,V
CE
=4V
I
C
=10A,V
CE
=4V
20
5
100
Current gain bandwidth product
fT
V
CE
=10V,I
C
=0.5A,f=1MHz 2 MHZ
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