UTC D45H2
PNP EXPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R203-003,A
PNP EXPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC D45H2 is a general purpose power application
and switching.
FEATURE
*Low Collector-Emitter Saturation Voltage
VCE(sat)=-1v(MAX)@-15A
*Fast Switching Speeds
TO-220
1
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C)
PARAMETER SYMBOL
VALUE
UNIT
Collector to Emitter Voltage
V
CEO
-30 V
Emitter To Base Voltage
V
EBO
-5 V
Collector Current(DC)
I
C
-10
A
Collector Dissipation(Tc=25
C)
Pc 50
W
Collector Dissipation(Ta=25
C)
Pc 1.67
W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-55 ~ +150
C
*PW<=10mS,Duty Cycle<=50%
ELECTRICAL CHARACTERISTICS
(Ta=25
C)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cutoff Current
I
CES
V
CE
=Rated ; V
CEO
,V
EB
=0
-10
A
Emitter Cutoff current
I
EBO
V
EB
=-5V,Ic=0
1
A
Collector Emitter Saturation
Voltage
V
CE
(SAT) I
C
=-10A,I
B
=-0.1A
-1
V
Base Emitter Saturation Voltage
V
BE
(SAT) I
C
=-10A,I
B
=-1A
-1.5
V
DC Current Gain
h
FE1
I
C
=-10A,V
CE
=-1V
100
Current Gain Bandwidth Product
F
T
V
CE
=-10V,I
C
=-0.5A
40 MHZ
Output Capacitance
C
CB
VCB=-10V,f=1MHZ
230 PF
Turn On Time
ton
Ic=-5A,I
B
=-0.5A
135
nS
Storage Time
tstg
I
B
=-0.5A
500
nS
Fall Time
tf
100
nS
PDF 
ZIP