UTC BT151 SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-007,B
SCRs
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage
capability and high thermal cycling performance. Typical
applications include motor control, industrial and domestic
lighting, heating and static switching.
SYMBOL
K
A
G
TO-220
1
1: CATHODE 2: ANODE 3: GATE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL
RATING
UNIT
Repetitive peak off-state voltages
BT151-500
BT151-650
BT151-800
V
DRM
, V
RRM
500*
650*
800
V
Average on-state current
(half sine wave; T
mb
109 C)
I
T(AV)
7.5
A
RMS on-state current
(all conduction angles)
I
T(RMS)
12 A
Non-repetitive peak on-state current
(half sine wave; T
j
= 25 C prior to surge)
t = 10 ms
t = 8.3 ms
I
TSM
100
110
A
I
2
t for fusing
(t = 10 ms)
I
2
t 50
A
2
s
Repetitive rate of rise of on-state current after triggering
(I
TM
= 20 A; I
G
= 50 mA; d
IG
/dt = 50 mA/ms)
dI
T
/dt
50
A/s
Peak gate current
I
GM
2
A
Peak gate voltage
V
GM
5
V
Peak reverse gate voltage
V
RGM
5
V
Peak gate power
(over any 20 ms period)
P
GM
5
W
Average gate power
P
G(AV)
0.5
W
Storage temperature
T
stg
-40~150
Operating junction temperature
T
j
125
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15A/
s.
UTC BT151 SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-007,B
THERMAL RESISTANCES
PARAMETER SYMBOL
MIN
TYP
MAX
UNIT
Thermal resistance Junction to mounting base
R
th j-mb
1.3 K/W
Thermal resistance Junction to ambient
In free air
R
th j-a
60 K/W
STATIC CHARACTERISTICS
(T
j
=25
C,unless otherwise stated)
PARAMETER SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Gate trigger current
I
GT
V
D
= 12 V; I
T
= 0.1 A
2
15
mA
Latching current
I
L
V
D
= 12 V; I
GT
= 0.1 A
10
40
mA
Holding current
I
H
V
D
= 12 V; I
GT
= 0.1 A
7
20
mA
On-state voltage
V
T
I
T
= 23 A
1.4
1.75
V
Gate trigger voltage
V
GT
V
D
= 12 V; I
T
= 0.1 A
V
D
= VDRM(max) ; I
T
= 0.1 A; T
j
= 125 C
0.25
0.6
0.4
1.5
V
Off-state leakage current
I
D
, I
R
V
D
= V
DRM(max)
; V
R
= VRRM(max) ;
T
j
= 125 C
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
(T
j
=25
C,unless otherwise stated)
PARAMETER SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Critical rate of rise of
off-state voltage
dV
D
/dt
V
DM
= 67% V
DRM(max)
; T
j
= 125 C;
exponential waveform;
Gate open circuit
R
GK
= 100
50
200
130
1000
V/s
Gate controlled turn-on
time
t
gt
I
TM
= 40 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/s
2
s
Circuit commutated
Turn-off time
t
q
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
TM
= 20 A; V
R
= 25 V; dI
TM
/dt = 30 A/s;
dV
D
/dt = 50 V/s; R
GK
= 100
70
s
UTC BT151 SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-007,B
1ms
100us
10us
1000
T/s
10
100
10ms
ITSM/A
dI
T
/dt limit
25
10
surge duration /S
15
20
5
0
IT(RMS)/A
0.01
0.1
1
10
Fig.2.Maximum Permissible non-repetitive peak
on-state Current I
TSM
,versus pulse width t
p
,
for
sinusoidal currents,t
p
10ms
Fig. 5.Maximum permissible repetitive rms on-state
current l
T(RMS)
,versus surge duration,for sinusoidal
currents,f=50HZ;T
m b
109
I
T
time
I
TSM
Tj initial=25m ax
Fig.1. Maximum on-state dissipation,P
tot
,
versus
average on-state current,I
T(AV)
,
where
a=form factor=I
T(RMS)
/I
T(AV)
.
4
8
0
15
IT(RMS)/A
0
105.5
125
118.5
Ptot/W
Tmb(max)/C
ITSM/A
Fig4.Maximum Permissible non-repetitive peak
on-state current I
TSM
,versus number of cycles,for
sinusoidal currents,f=50HZ.
5
10
2
6
112
1
3
5
7
4
2.8
2.2
1.9
a=1.57
conduction
angle
degrees
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
100
Number of half cycles at 50Hz
60
0
10
100
1
I
T
time
I
TSM
Tj initial=25max
120
80
40
20
1000
T
100
150
-50
50
0
1.6
0.8
Tj/
1.2
1.4
1
0.6
0.4
V
GT
(25)
V
GT
(Tj)
100
150
-50
50
0
15
5
Tmb/C
0
10
IT(RMS)/A
109
Fig.3. Maximum permissible rms current lT(RMS),
versus mounting base temperature T
mb
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/V
GT
(25),versus junction temperature Tj.
0
50
100
150
UTC BT151 SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-007,B
1ms
0.1ms
10us
0.1
tp/s
Fig.11.Transient thermal impedance Zthj-mb,
versus pulse width tp.
0.001
0.01
10ms
0.1s
VT/V
Fig.10.Typical and maximum on-state characteristic.
IT/A
Zth j-mb(K/W)
100
150
-50
50
0
3
1
Tj/C
2
2.5
1.5
0.5
0
Fig. 7.Normalised gate trigger Current
I
GT
(Tj)/I
GT
(25),versus junction temperature Tj
.
I
GT
(25)
I
GT
(Tj)
max
100
150
-50
50
0
3
1
Tj/C
2
2.5
1.5
0.5
0
Fig.8.Normalised latching Current I
L
(Tj)/I
L
(25),
versus junction temperature Tj
I
L
(25)
I
L
(Tj)
100
150
-50
50
0
3
1
Tj/C
2
2.5
1.5
.5
0
Fig. 9.Normalised holding current I
H
(Tj)/I
H
(25),
versus junction temperature Tj
.
I
H
(25)
I
H
(Tj)
1s
10s
1
10
tp
t
P
D
100
150
50
0
10000
Tj/C
1000
10
Fig.12.Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
dVD/dt(V/us)
RGK=100
2
100
gate open circuit
Tj=25
Tj=125
0
5
10
15
20
25
30
0
0.5
1
1.5
typ
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