UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-003,B
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
* Collector current up to 5A
* 2SD965 : Collector-Emitter voltage up to 20 V
* 2SD965A : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
SOT-89
1
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
40 V
Collector-emitter voltage
2SD965
2SD965A
V
CEO
20
30
V
Emitter-base voltage
V
EBO
7 V
Collector dissipation(Ta=25
C)
Pc 750
mW
Collector current
Ic
5
A
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-65 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
BV
CBO
Ic=100
A,I
E
=0 40
V
Collector-emitter breakdown voltage
2SD965
2SD965A
BV
CEO
Ic=1mA,I
B
=0
20
30
V
Emitter-base breakdown voltage
BV
EBO
I
E
=10
A,Ic=0 7
V
Collector cut-off current
I
CBO
V
CB
=10V,I
E
=0
100
nA
Emitter cut-off current
I
EBO
V
EB
=7V,Ic=0
100
nA
DC current gain(note)
h
FE
V
CE
=2V,Ic=1mA
V
CE
=2V,Ic=0.5A
V
CE
=2V,Ic=2A
230
150
200
800
Collector-emitter saturation voltage
V
CE
(sat) Ic=3A,
I
B
= 0.1A
1
V
Current gain bandwidth product
f
T
V
CE
=6V,Ic=50mA
150
MHz
UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R208-003,B
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Output capacitance
Cob
V
CB
=20V,I
E
=0
f=1MHz
50
pF
CLASSIFICATION OF hFE2
RANK Q R S
RANGE 230-380 340-600 560-800
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic,Collector current (A)
0
0.4
0.8
1.2
1.6
2.0
0
1.0
1.5
2.0
2.5
3.0
I
B
=0.5mA
I
B
=1.0mA
I
B
=1.5mA
I
B
=2.0mA
I
B
=2.5mA
I
B
=3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
, DC current Gain
10
2
10
1
10
0
10
3
10
4
10
3
10
2
10
1
10
-1
V
CE
=2V
Fig.3 Base-Emitter on Voltage
10
1
10
2
10
3
10
4
Ic,Collector current (mA)
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
V
CE
=2V
Ic,Collector current (mA)
10
4
10
3
10
2
10
1
10
0
Saturation voltage (mV)
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
Current Gain-bandwidth
product,f
T
(MHz)
10
0
10
1
10
2
V
CE
=6V
Collector-Base voltage (V)
Cob,Capacitance (pF)
10
3
10
3
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
f=1MHz
I
E
=0
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