UTC 2SB834
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R203-014,A
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
Low frequency power amplifier applications.
TO-220
1
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
60 V
Collector-emitter voltage
V
CEO
60 V
Emitter-base voltage
V
EBO
7 V
Total Power Dissipation(Ta=25
C
)
Pc 30
W
Collector current
Ic
3
A
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
Base Current
IB
0.5
A
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-emitter breakdown voltage
BV
CEO
Ic=50mA 60
V
Collector cut-off current
I
CBO
V
CB
=60V
100
A
Emitter cut-off current
I
EBO
V
EB
=7V
100
A
Collector-emitter saturation voltage
V
CE(SAT)
I
C
=3A,I
B
=0.3A
1
V
Collector-emitter on voltage
V
CE(ON)
V
CE
=5V,I
C
=0.5A
0.7
1
V
DC current gain
hFE1
hFE2
I
C
=0.5A,V
CE
=5V
I
C
=3A,V
CE
=5V
60
20
300
Current gain bandwidth product
fT
V
CE
=5V,I
C
=0.5A
9
MHZ
CLASSIFICATION of hFE1
RANK O Y GR
RANGE 60-120 100-200 150-300
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