UTC 2SA733
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA733 is an low frequency amplifier.
FEATURES
*Collector-Emitter voltage:
BV
CBO
=-50V
*Collector current up to 150mA
*High hFE linearity
*Complimentary to 2SC945
TO-92
1
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Dissipation(Ta=25
C
)
Pc
250
mW
Collector Current
Ic
-150
mA
Junction Temperature
T
j
125
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BV
CBO
Ic=-100
A, I
E
=0
-60
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=-10mA,I
B
=0
-50
V
Collector Cut-Off Current
I
CBO
V
CB
=-40V,I
E
=0
-100
nA
Emitter Cut-Off Current
I
EBO
V
EB
=-3V,Ic=0
-100
nA
DC Current Gain(note)
h
FE1
V
CE
=-6V,Ic=-1mA
90
600
Collector-Emitter Saturation Voltage
V
CE
(sat)
Ic=-100mA,I
B
=-10mA
-0.1
-0.3
V
Current Gain Bandwidth Product
f
T
V
CE
=-10V,Ic=-50mA
100
190
MHz
Output Capacitance
Cob
V
CB
=-10V,I
E
=0,f=1MHz
2.0
3.0
pF
Noise Figure
NF
Ic=-0.1mA,V
CE
=-6V
R
G
=10k
,f=100Hz
4.0
6.0
dB
UTC 2SA733
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
CLASSIFICATION OF hFE
RANK
R
Q
P
K
RANGE
90-180
135-270
200-400
300-600
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
0
-4
-8
-12
-16
-20
0
-20
-40
-60
-80
-100
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
, DC current Gain
10
2
10
1
10
0
10
3
10
3
10
2
10
1
10
0
10
-1
V
CE
=-6V
Fig.3 Base-Emitter on Voltage
10
-1
10
0
10
1
10
2
Ic,Collector current (mA)
Base-Emitter voltage (V)
0
-0.2
-0.4
-0.6
-0.8
-1.0
V
CE
=-6V
Ic,Collector current (mA)
10
3
10
2
10
1
10
0
10
-1
Saturation voltage (MV)
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
Current Gain-bandwidth
product,f
T
(MHz)
10
0
10
1
10
2
V
CE
=-6V
Collector-Base voltage (V)
Cob,Capacitance (pF)
10
0
10
1
10
2
10
0
10
1
10
2
10
3
f=1MHz
I
E
=0
I
B
= -50
A
I
B
= -100
A
I
B
= -150
A
I
B
= -200
A
I
B
= -250
A
I
B
= -300
A
10
-1
10
-1
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