UTC 2N3904
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-027,A
GENERAL PURPOSE APPLIATION
FEATURES
*Collector-Emitter Voltage: V
CEO
=40V
*Collector Dissipation: Pc(max)=625mW
*Complementary to 2N3906
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
60 V
Collector-emitter voltage
V
CEO
40 V
Emitter-base voltage
V
EBO
6 V
Collector current
Ic
200
mA
Collector dissipation
Pc
625
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector Cut-off Current
ICEX
V
CE
=30V, V
EB
=3V
50
nA
Base Cut-off Current
I
BL
V
CE
=30V, V
EB
=3V
50
nA
Collector-base breakdown voltage
V
CBO
Ic=10
A,I
E
=0
60
V
Collector-emitter breakdown voltage
(note)
V
CEO
Ic=1mA,I
B
=0 40
V
Emitter-base breakdown voltage
V
EBO
I
E
=10
A, Ic=0
6 V
DC current gain (note)
hFE1
hFE2
hFE3
hFE4
hFE5
V
CE
=1V,Ic=0.1mA
V
CE
=1V,Ic=1mA
V
CE
=1V,Ic=10mA
V
CE
=1V,Ic=50mA
V
CE
=1V,Ic=100mA
40
70
100
60
30
300
Collector-emitter saturation voltage
(note)
V
CE
(sat)1
V
CE
(sat)2
Ic=10mA,I
B
=1mA
Ic=50mA,I
B
=5mA
0.2
0.3
V
Base-emitter saturation voltage
(note)
V
BE
(sat)1
V
BE
(sat)2
Ic=10mA,I
B
=1mA
Ic=50mA,I
B
=5mA
0.65
0.85
0.95
V
Current gain bandwidth product
f
T
V
CE
=20V, Ic=10mA, f=100MHz
300
MHz
Output Capacitance
Cob
V
CB
=5V,I
E
=0, f=1MHz
4
pF
UTC 2N3904
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-027,A
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Turn on time
t
ON
Vcc=3V,
V
BE
=0.5V, Ic=10mA,
I
B
1=1mA
70
ns
Turn off time
t
OFF
I
B
1=1
B
2=1mA
250
ns
Note: Pulse test: PW<=300
s, Duty Cycle<=2%
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