AlGaAs/GaAs T-1 PACKAGE
INFRARED EMITTING DIODE
MIE-334A4
Description
Package Dimensions
The MIE-334A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Features
l
High radiant power and high radiant intensity
l
Suitable for DC and high pulse current operation
l
Standard T-1 (
3mm ) package
l
Peak wavelength
p
= 940 nm
l
Good spectral matching to si-photodetector
l
Radiant angle : 15
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current(300pps,10
s pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
Storage Temperature Range
-55
o
C to +100
o
C
Lead Soldering Temperature
260
o
C for 5 seconds
02/04/2002
Unity Opto Technology Co., Ltd.
Unit : mm (inches )
Notes :
1. Tolerance is 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.4 mm (.0157") max.
3. Lead spacing is measured where the leads emerge from the package.
3.00
(.118)
4.00
(.157)
2.54
(.100)
.50 TYP.
(.020)
1.00
(.040)
1.00MIN.
(.040)
23.40MIN.
(.920)
5.25
(.207)
A
C
FLAT DENOTES CATHODE
0.80 0.50
(.031.020)
MIE-334A4
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Test Conditions
Symbol
Min.
Typ .
Max.
Unit
Radiant Intensity
I
F
=20mA
Ie
-
2.2
-
mW/sr
Forward Voltage
I
F
=50mA
V
F
-
1.3
1.5
V
Reverse Current
V
R
=5V
I
R
-
-
100
A
Peak Wavelength
I
F
=20mA
p
-
940
-
nm
Spectral Bandwidth
I
F
=20mA
-
50
-
nm
View Angle
I
F
=20mA
2
1/2
-
30
-
deg .
Typical Optical-Electrical Characteristic Curves
02/04/2002
0
0.5
1
840
880
920
960
1000
1040
Unity Opto Technology Co., Ltd.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40
-20
0
20
40
60
Ambient Temperature T
A
(
o
C)
FIG.3 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
Output Power To Value I
F
=20mA
Forward Voltage (V)
FIG.2 FORWARD CURRENT VS.
FORWARD VOLTAGE
Forward Current (mA)
0
1
2
3
4
5
0
20
40
60
80 100
Forward Current (mA)
FIG.4 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
Output Power Relative To
Value at I
F
=20mA
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
Relative Radiant Intensity
FIG.5 RADIATION DIAGRAM
0.5
0.3
0.1
0.2
0.4
0.6
30
40
90
70
60
50
80
1.0
0.9
0.8
Relative Radiant Intensity
0 10 20
0
20
40
60
80
100
0.8
1.2
1.6
2.0
2.4
2.8
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