SIDE LOOK PACKAGE
PIN PHOTODIODE
MID-85H1C
Description
Package Dimensions
The MID-85H1C is a photodiode mounted in special
dark plastic package and suitable for the IRED
(850nm/880nm) Type.
Features
l
High photo sensitivity
l
Low junction capacitance
l
High cut -off frequency
l
Fast switching time
l
Suitable for the IRED 850nm/880nm type
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Notes :
1. Tolerance is 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
Unit: mm ( inches )
Unity Opto Technology Co., Ltd.
5.00
(.200)
2.54
(.100)
RADIANT SENSITIVE AREA
0.50 TYP.
(.020)
4.00
(.160)
6.60
(.260)
4.00
(.160)
1.00MIN.
(.040)
22.60 TYP.
(.890)
A
C
16.00 MIN.
(.630)
MID-85H1C
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Reverse Break Down Voltage
I
R
=0.1mA
V
(BR)R
30
V
Ee=0
Reverse Dark Current
V
R
=10V
I
D
30
nA
Ee=0
Open Circuit Voltage
=850nm
V
OC
350
mV
Ee=0.1mW/cm
2
Rise Time
V
R
=10V
=850nm
Tr
50
nsec
Fall Time
R
L
=50
Tf
50
Light Current
V
R
=5V,
=850nm
I
L
9
A
Ee=0.1mW/cm
2
Total Capacitance
V
R
=3V, f=1MH
z
C
T
25
pF
Ee=0
Typical Optical-Electrical Characteristic Curves
02/04/2002
Unity Opto Technology Co., Ltd.
0.1
1
10
100
1000
0
20
40
60
80
100
Ambient Temperature -
o
C
FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE
V
R
=10V, Ee=0 mw/cm
2
0
1000
2000
3000
4000
0
5
10
15
20
Reverse Volatage - V
R
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
TEMP=25
o
C, Ee=0 mW/cm
2
0
50
100
150
200
0
20
40
60
80
100
Ambient Temperature -
o
C
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
Total Power Dissipation mW
Capacitance C - pF
Reverse Voltage- V
R
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
F=1MHz ; Ee=0mW/cm
2
0.01 0.1 1 10 100
0
20
40
60
80
100
Dark Current IR - pA
Dark Current IR - nA
MID-85H1C
Typical Optical-Electrical Characteristic Curves
02/04/2002
Unity Opto Technology Co., Ltd.
0
20
40
60
80
100
700 800 900 1000 1100 1200
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
Photocurrnet Ip -
A
Irradiance Ee (mW/cm
2
)
FIG.6 PHOTOCURRENT VS.
IRRADIANCE = 850 nm
FIG.7 SENSITIVITY DIAGRAM
Relative Sensitivity
1.0
0.9
0.8
0 10 20
0.5
0.3
0.1
0.2
0.4
0.6
30
40
50
60
90
70
80
Relative Spectral Sensitivity
0.1
1
10
100
1000
0.01
0.1
1
10
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