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Электронный компонент: CHX2090-99F/00

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CHX2090
Ref. : DSCHX20909028
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12-24GHz Frequency Multiplier
GaAs Monolithic Microwave IC
Description
The CHX2090 is a cascadable by 2 frequency
multiplier monolithic circuit.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
Main Features
Broadband performances : 11-13GHz
15dBm output power for +12dBm input power
DC bias : Vd=3.5Volt@Id=50mA
Chip size : 1.67 x 0.97 x 0.10 mm
typical measurement
.
-16
-12
-8
-4
0
4
8
12
16
20
9
10
11
12
13
14
15
Input Frequency (GHz)
Output power (dBm)
Pout (Fin)
Pout (2*Fin)
Main Characteristics
Tamb. = 25C
Symbol
Parameter
Min
Typ
Max
Unit
Fin
Input frequency range
11
13
GHz
Fout
Output frequency range
22
26
GHz
Pin
Input power
6
12
dBm
Pout
Output power for +12dBm input power
13
15
dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHX2090
12-24GHz Frequency Multiplier
Ref. : DSCHX20909028
2/4
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd = 3.5V , Vg1 = -0.9V , Vg2 = -0.4V.
Symbol
Parameter
Min
Typ
Max
Unit
Fin
Input frequency range
11
13
GHz
Fout
Output frequency range
22
26
GHz
Pin
Input power
6
12
dBm
Pout
Output power for +12dBm input power
11
15
dBm
Is/Fo
Fin level at the output ( 11.5 < Fin < 13)
-10
-4
dBm
VSWRin
Input VSWR
2.0:1
VSWRout
Output VSWR
2.5:1
Id
Bias current
50
70
mA
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5V
V
Id
Drain bias current
120
mA
Vg
Gate bias voltage
-2 to +0.4
V
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
12-24GHz Multiplier
CHX2090
Ref. : DSCHX20909028
3/4
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Jig Measurements.
Bias conditions : Vd = 3.5V , Vg1 = -0.9V , Vg2 = -0.4V.
Pout = f(Fin) for Pin=12 dBm.
-16
-12
-8
-4
0
4
8
12
16
20
9
10
11
12
13
14
15
Input Frequency (GHz)
Output power (dBm)
Pout (Fin)
Pout (2*Fin)
S11 and S22 =
f(Fin) for Pin = 0 dBm
.
Pout = f(Pin) for Fin = 11.5 GHz.
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0
5
10
15
20
25
30
Input Frequency (GHz)
Return losses (dB)
S11
S22
-10
-8
-6
-4
-2
0
2
4
6
8
10
5
7
9
11
13
15
17
Input power (dBm)
Fin output power (dBm)
0
2
4
6
8
10
12
14
16
18
20
2Fin output power (dBm)
Pout (Fin)
Pout (2*Fin)
Pout = f(Vg2) for Pin = 10 dBm and
Pout = f(Vg2) for Pin=14 dBm and
Fin = 11.5 Ghz.
Fin = 11.5 Ghz.
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
-1,6
-1,4
-1,2
-1
-0,8
-0,6
-0,4
-0,2
Vg2 (V)
Fin output power (dBm)
-4
-2
0
2
4
6
8
10
12
14
16
2Fin output power (dBm)
Pout (Fin)
Pout (2*Fin)
-10
-8
-6
-4
-2
0
2
4
6
8
10
-1,6
-1,4
-1,2
-1
-0,8
-0,6
-0,4
Vg2 (V)
Fin output power (dBm)
0
2
4
6
8
10
12
14
16
18
20
2Fin output power (dBm)
Pout (Fin)
Pout (2*Fin)
CHX2090
12-24GHz Frequency Multiplier
Ref. : DSCHX20909028
4/4
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Vd=3.5V Vg1=-0.9V Vg2=-0.4V.
1nF
100pF
100pF
To Vg2 DC Gate supply feed
To Vg1 DC Gate supply feed
To Vd DC Drain supply feed
IN
OUT
Note : Supply feed should be capacitively bypassed. 25
m diameter gold wire is to be prefered.
16
1670 +/- 35
1410
1070
740
490
415
415
970 +/- 35
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
Ordering Information
Chip form
:
CHX2090-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S.
assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for
use as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.