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Электронный компонент: CHA2391-99F

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CHA2391
Ref. : DSCHA23912240 -28-Aug.-02
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Very Low Noise Amplifier
GaAs Monolithic Microwave IC
Description

The CHA2391 is a two-stage wide band
monolithic low noise amplifier.

The circuit is manufactured with a standard
HEMT process : 0.25m gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.

It is supplied in chip form.


Main Features
Broad band performance 36-40GHz
2.5dB noise figure, 36-40GHz
15dB gain,
0.5dB gain flatness
Low DC power consumption, 50mA
20dBm 3rd order intercept point
Chip size : 1,67 x 1,03 x 0.1mm
IN
OUT
Vg 1 Vg 2
25
50
Vd
On wafer typical measurements.
.
Main Characteristics
Tamb = +25C
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
36
40
GHz
NF
Noise figure, 36-40GHz
2.5
3
dB
G Gain
12 15 dB
P1dB
Output power at 1dB gain compression
9
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
0
4
8
12
16
20
30 31
32 33
34 35 36
37 38
39 40
Frequency (GHz)
Ga
i
n
(
d
B
)
0
1
2
3
4
5
NF
(
d
B
)
CHA2391
36-40GHz Very Low Noise Amplifier
Ref. : DSCHA23912240 -28-Aug.-02
2/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C,
Bias Conditions:Vd = +4V
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
36
40
Ghz
G Gain
(1)
12 15 dB
G
Gain flatness (1)
0.5
1.0
dB
NF
Noise figure (1)
2.5 3 dB
VSWRin Input VSWR (1)
3.0:1
VSWRout Ouput VSWR (1)
3.0:1
IP3
3rd order intercept point
20
dBm
P1dB
Output power at 1dB gain compression
12 dBm
Vd DC
Voltage
Vd
Vg
-2
4
-0.25
4.5
+0.4
V
Id
Drain bias current (2)
45
mA

(1
) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires, the
indicated parameters should be improved
.
(2) 45 mA is the typical bias current used for on wafer measurements, with Vg1= Vg2.
For optimum noise figure, the bias current could be reduced down to 30 mA, adjusting the
Vg1,2 voltage.
Absolute Maximum Ratings
(1)
Tamb = +25C
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
5.0
V
Vg
Gate bias voltage
-2.0 to +0.4
V
Vdg
Maximum drain to gate voltage (Vd-Vg)
+5.0
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Pin
Maximum continuous input power
+1
dBm
Top
Operating temperature range
-40 to +85
C
Tsg
Storage temperature range
-55 to +125
C

(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
36-40GHz Very Low Noise Amplifier
CHA2391
Ref. : DSCHA23912240 -28-Aug.-02
3/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C
Bias conditions: Vd = +4V, Id=45mA
Freq
GHz
MS11
dB
PS11
MS12
dB
PS12
MS21
dB
PS21
MS22
dB
PS22
10
-6,21 154,25 -62,67 -132,87 -22,58 67,85 -2,93 -143,42
12
-6,33 141,75 -57,99 -156,02 -16,83 50,10 -3,89 -164,87
14
-6,29 127,36 -55,17 173,41 -12,52 23,11 -4,95 178,26
16
-6,08 114,92 -55,88 168,49 -9,73 -5,37 -5,86 161,51
18
-5,84 101,82 -53,92 135,46 -7,54 -31,47 -7,18 144,01
20 -5,54 86,62 -51,45 138,48 -6,13 -55,85 -8,65 131,69
21 -5,43 78,44 -50,53 139,32 -5,41 -67,16 -9,65 127,30
22
-5,30 68,96 -49,42 132,07 -4,82 -77,06 -10,46 125,73
23
-5,29 58,88 -49,04 122,68 -4,06 -85,86 -11,18 124,83
24
-5,35 47,97 -49,34 123,59 -3,25 -94,05 -11,33 125,87
25
-5,54 35,38 -47,96 126,63 -2,19 -101,60 -11,19 124,77
26
-5,87 21,00 -46,55 123,65 -0,88 -110,55 -11,01 125,49
27
-6,47 3,87 -44,77 125,28 0,38 -119,43 -10,17 122,17
28 -7,39
-16,23
-43,13
124,81
1,88
-128,85
-9,43
117,25
29 -8,77
-41,92
-40,03
123,61
3,63
-138,80
-9,11
109,58
30 -10,69 -77,04 -37,67 115,28 5,50 -151,53 -8,70 103,41
31 -12,44
-127,88
-35,70
105,15 7,35
-166,04
-8,15 94,50
32 -12,19
170,79
-33,04
93,43 9,18 176,87
-7,69 83,88
33 -10,65
120,05
-31,11
75,77 10,75
158,36
-7,59 70,55
34 -9,85
82,96
-29,60
58,30
12,14
138,69
-7,80
56,02
35 -9,98
54,87
-28,64
42,10
13,37
117,54
-8,57
40,66
36 -10,94
33,47
-27,69
26,41 14,27 95,66 -9,80 25,19
37 -12,52 20,51 -26,89 9,83 14,95 73,24 -11,70 9,54
38 -13,72 17,24 -26,15 -5,87 15,28 51,13 -14,31 -4,52
39 -13,22 18,64 -25,53 -22,03 15,46 29,79 -17,89 -18,79
40 -11,65 9,29 -25,06 -38,88 15,53 8,33 -23,80 -30,52
41 -10,30 -3,86 -24,91 -56,23 15,40 -12,86 -51,61 -16,72
42
-8,90 -20,55 -24,74 -72,65 15,17 -32,98 -26,28 118,15
43
-7,51 -38,62 -24,62 -88,50 14,89 -52,97 -20,52 111,87
44 -6,22
-59,90
-24,63
-105,66
14,54
-73,10
-17,09
101,92
45 -5,17
-81,47
-24,78
-122,84
14,05
-93,80
-14,60
89,21
46
-4,24 -102,42 -25,30 -139,10 13,39 -113,54 -12,92 73,66
47
-3,18 -122,95 -25,65 -155,88 12,59 -133,30 -11,93 59,95
48
-2,51 -143,29 -26,29 -173,89 11,55 -152,49 -11,14 47,16
49
-2,04 -161,80 -27,21 170,58 10,40 -170,65 -10,65 35,08
50 -1,62
-178,03
-27,82
157,24
9,39
172,00
-9,69
20,78
CHA2391
36-40GHz Very Low Noise Amplifier
Ref. : DSCHA23912240 -28-Aug.-02
4/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C
Vd = +4V Id=45mA



















Typical Gain and Matching measurements on wafer.


Typical Gain and Noise Figure measurements on wafer.
0
4
8
12
16
20
30 31
32 33
34 35 36
37 38
39 40
Frequency (GHz)
Ga
i
n
(
d
B
)
0
1
2
3
4
5
NF
(
d
B
)
-20
-15
-10
-5
0
5
10
15
20
20
25
30
35
40
45
50
Frequency (GHz)
Ga
i
n
, R
L
o
s
s
(d
B
)
dBS11
dBS21
dBS22
36-40GHz Very Low Noise Amplifier
CHA2391
Ref. : DSCHA23912240 -28-Aug.-02
5/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Tamb = +25C
Vd = 4V ; Id = 45mA

Freq = 37GHz
0
2
4
6
8
10
12
14
16
-12
-10
-8
-6
-4
-2
0
2
4
6
Input Power ( dBm )
O
u
t
p
u
t
P
o
we
r ( d
B
m )
0
2
4
6
8
10
12
14
16
Gain (
dB )
Freq = 39.5GHz
0
2
4
6
8
10
12
14
16
-14
-12
-10
-8
-6
-4
-2
0
2
4
Input Power ( dBm )
O
u
t
p
u
t
P
o
we
r ( d
B
m )
0
2
4
6
8
10
12
14
16
Gain (
dB )

Typical Output Power and Gain measurements in test jig
(included losses of the jig)
CHA2391
36-40GHz Very Low Noise Amplifier
Ref. : DSCHA23912240 -28-Aug.-02
6/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Chip Assembly
25
50
To Vd DC Drain supply feed
To Vg1 DC Gate supply feed
To Vg2 DC Gate supply feed
47pF
47pF
47pF
IN
OUT
Note : Supply feed should be capacitively bypassed.



Mechanical data
1670 +/-35
1290
990
345
645
445
1030 +/
-
3
5
445
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
36-40GHz Very Low Noise Amplifier
CHA2391
Ref. : DSCHA23912240 -28-Aug.-02
7/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Biasing
This chip is a two stage amplifier, and flexibility is provided by the access to number of pads.
The internal DC electrical schematic is given in order to use these pads in a safe way.
IN
OUT
Vg 1
Vg 2
25
50
Vd
Vds1
Vds2

The two requirements are :

N1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ).

We propose two standard biasing :

Low Noise and low consumption :
Vd = 3.5V and Id = 30mA.
Low Noise and high output power :
Vd = 4.0V and Id = 45mA.( A separate access to
the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a
typical current of 30mA for the output stage and 15 mA for the first stage. The first step to
bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then
Vg1 is reduced to obtain 45 mA of current through the amplifier.
CHA2391
36-40GHz Very Low Noise Amplifier
Ref. : DSCHA23912240 -28-Aug.-02
8/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09






























Ordering Information

Chip form :
CHA2391-99F/00




Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.