T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
1 TA0103 Rev 3.3/06.00
TA0103A
Stereo 250W (4
) Class-T Digital Audio Amplifier Driver using
Digital Power Processing (DPP
TM
) Technology
T e c h n i c a l I n f o r m a t i o n
R e v i s i o n 3 . 3 - J u n e 2 0 0 0
G E N E R A L D E S C R I P T I O N
T h e T A 0 1 0 3 A i s a 2 5 0 W c o n t i n u o u s a v e r a g e ( 4
) , t w o c h a n n e l A m p l i f i e r D r i v e r
M o d u l e w h i c h u s e s T r i p a t h ' s p r o p r i e t a r y D i g i t a l P o w e r P r o c e s s i n g ( D P P
T M
)
t e c h n o l o g y . C l a s s - T a m p l i f i e r s o f f e r b o t h t h e a u d i o f i d e l i t y o f C l a s s - A B a n d t h e
p o w e r e f f i c i e n c y o f C l a s s - D a m p l i f i e r s .
Applications
Audio/Video
Amplifiers/Receivers
Pro-audio Amplifiers
Automobile Power Amplifiers
Subwoofer Amplifiers
Home/PC Speaker Systems
Benefits
Reduced system cost with smaller/less
expensive power supply and heat sink
Signal fidelity equal to high quality Class-
AB amplifiers
High dynamic range compatible with
digital media such as CD and DVD
Features
Class-T architecture
Proprietary Digital Power Processing
technology
Supports wide range of output power
levels
"Audiophile" Sound Quality
0.04% THD+N @ 55W, 8
0.03% IHF-IM @ 36W, 8
140W @ 8
, 0.1% THD+N,
V
S
= +54V
250W @ 4
, 0.1% THD+N,
V
S
= +54V
High Power
150W @ 8
, 1% THD+N,
V
S
= +54V
300W @ 4
, 1% THD+N,
V
S
= +54V
High Efficiency
92% @ 155W @ 8
,
V
S
= +45V
90% @ 275W @ 4
,
V
S
= +45V
Dynamic Range = 106 dB
Requires only N-Channel MOSFET output
transistors
High power supply rejection ratio
Mute input
Outputs short-circuit protected
Over- and under-voltage protection
Bridgeable, single-ended outputs
38-pin quad package
Supports 100kHz BW of Super Audio CD and
DVD-Audio (refer to Application Note for
specifics)
T Y P I C A L P E R F O R M A N C E
THD+N (
%
)
Output Power (W)
THD+N versus Output Power
20Hz - 22kHz BW
f = 1kHz
BBM = 65nS
Vs = +/-54V
Av = 20.75
ST STW38NB20 MOSFET
1
2
5
0.02
0.01
0.05
0.1
0.2
0.5
10
2
5
10
20
50
100
200
1
R
L
= 4
R
L
= 8
T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
2 TA0103 Rev 3.3/06.00
Absolute Maximum Ratings
SYMBOL
PARAMETER
Value
UNITS
Vs
Supply Voltage (Vspos & Vsneg)
+/-85
V
V5
Positive 5 V Bias Supply
6
V
VN12
Reference Voltage: Nominal +12V referenced to Vsneg
18
V
T
STORE
Storage Temperature Range
-40 to 150
C
T
A
Operating Free-air Temperature Range
-20 to +80
C
Notes:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Damage will occur to the device if VN12 is not supplied or falls below the recommended
operating voltage when V
S
is within its recommended operating range.
Operating Conditions
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNITS
Vs
Supply Voltage (Vspos & Vsneg)
+/- 35
+/- 60
V
V5
Positive 5 V Bias Supply
4.5
5
5.5
V
VN12
Reference Voltage: Nominal +12V referenced to Vsneg
10.8
12
13.2
V
Note: Recommended Operating Conditions indicate conditions for which the device is functional. See Electrical
Characteristics for guaranteed specific performance limits.
Electrical Characteristics
T
A
= 25
C. See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup.
Minimum and maximum limits are guaranteed but may not be 100% tested.
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNITS
I
q
Quiescent Current
+45V
(no load, BBM0=BBM1=0)
-45V
+5V
VN12
30
36
43
210
80
60
65
250
mA
mA
mA
mA
I
S
Source Current @ P
OUT
= 275W, R
L
= 4
V
SPOS
= +45V
@ 10% THD+N
V
SNEG
= -45V
7
7
7.8
7.8
A
A
I5
Source Current for 5V Bias Supply @ P
OUT
= 275W, R
L
= 4
50
60
mA
IVN12
Source Current for VN12 Supply @ P
OUT
= 275W, R
L
= 4
80
100
mA
Vu
Under Voltage (Vspos & Vsneg)
+/-35
V
Vo
Over Voltage (Vspos & Vsneg)
+/-60
V
V
IH
High-level Input Voltage (MUTE)
3.5
V
V
IL
Low-level Input Voltage (MUTE)
1
V
I
DD
MUTE
Mute Supply Current
+45V
(no load, BBM0=BBM1=0)
-45V
+5V
VN12
0.375
3.7
17
0.5
2
5
25
2
mA
mA
mA
mA
V
OH
High-level Output Voltage (HMUTE & OVERLOADB)
3.5
V
V
OL
Low-level Output Voltage (HMUTE & OVERLOADB)
1
V
V
TOC
Over Current Sense Voltage Threshold
0.67
0.75
0.82
V
A
V
Gain Ratio V
OUT
/V
IN
, R
IN
= 0
108
V/V
Voffset
Offset Voltage, no load, MUTE = Logic low (before nulling)
300
500
mV
T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
3 TA0103 Rev 3.3/06.00
Performance Characteristics Single Ended, Vs = +54V
Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. T
A
= 25
C.
See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup.
Performance Characteristics Single Ended, Vs = +45V
Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. T
A
= 25
C.
See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup.
Minimum and maximum limits are guaranteed but may not be 100% tested.
Notes:
1) V5 = +5V, VN12 = +12V referenced to V
SNEG
2) Test/Application Circuit Values:
D = MUR120T3 diodes, R
IN
= 22.1K
R
D
= 33
, R
S
= 0.025
,R
G
= 10
R
OCR1
= R
OCR2
= 0
, L
F
= 18uH (Amidon core T200-2)
C
F
= 0.22uF, C
D
= 0.1uF, C
IN
= 1uF, C
BY
= 0.1uF
Power Output MOSFETs, M = ST STW38NB20
BBMO=0,
BBM1=1
SYMBOL PARAMETER
CONDITIONS MIN.
TYP.
MAX.
UNITS
P
OUT
Output
Pow er
(Continuous Average/Channel)
THD+N = 0.1%, R
L
= 8
R
L
= 4
THD+N = 1%,
R
L
= 8
R
L
= 4
140
250
150
300
W
W
W
W
THD + N
Total Harmonic Distortion Plus
Noise
P
OUT
= 55W/Channel, R
L
= 8
0.04
%
IHF-IM
IHF Intermodulation Distortion
19kHz, 20kHz, 1:1 (IHF), R
L
= 4
P
OUT
= 36W/Channel
0.02 %
SNR
Signal-to-Noise Ratio
A Weighted, R
L
= 8, P
OUT
=140W/Ch 101 dB
CS
Channel Separation
0dBr = 60W, R
L
= 4, f = 1kHz
82
dB
PSRR
Pow er Supply Rejection Ratio
Input Referenced, 30kHz Bandw idth
67
dB
Pow er
Efficiency
P
OUT
= 200W/Channel, R
L
= 8
92
%
e
NOUT
Output Noise Voltage
A Weighted, no signal, input shorted,
DC offset nulled to zero, BBM =
145nS
295 V
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNITS
P
OUT
Output
Pow er
(Continuous Average/Channel)
THD+N = 0.1%, R
L
= 8
R
L
= 4
THD+N = 1%,
R
L
= 8
R
L
= 4
85
150
100
200
W
W
W
W
THD + N
Total Harmonic Distortion Plus
Noise
P
OUT
= 55W/Channel, R
L
= 8
0.04
%
IHF-IM
IHF Intermodulation Distortion
19kHz, 20kHz, 1:1 (IHF), R
L
= 4
P
OUT
= 36W/Channel
0.03 %
SNR
Signal-to-Noise Ratio
A Weighted, R
L
= 8, P
OUT
=
85W/Ch 100 dB
CS
Channel Separation
0dBr = 60W, R
L
= 4, f = 1kHz
82
dB
PSRR
Pow er Supply Rejection Ratio
Input Referenced, 30kHz Bandw idth
67
dB
Pow er
Efficiency
P
OUT
= 155W/Channel, R
L
= 8
92
%
e
NOUT
Output Noise Voltage
A Weighted, no signal, input shorted,
DC offset nulled to zero, BBM = 145nS
250 V
T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
4 TA0103 Rev 3.3/06.00
Pin Description
Pin
Function
Description
1 AGND
Analog
Ground
2
OVERLOADB
Logic output. When low, indicates that the level of the input signal has
overloaded the amplifier.
3
V5
Positive 5 Volts
4
MUTE
Logic input. When high, both amplifiers are muted. When low (grounded),
both amplifiers are fully operational.
5, 6
IN2, IN1
Single-ended input (Channel 1 & 2)
7, 8
BBM0, BBM1
Break-before-make timing control
9, 12
GNDKELVIN1,
GNDKELVIN2
Kelvin connection to speaker ground (Channel 1 & 2)
10, 11
OCR2, OCR1
Over-current threshold adjustment (Channel 1 & 2)
13, 14
OCS1L+, OCS1L-
Over Current Sense resistor, Channel 1 low-side
15, 16
OCS1H-, OCS1H+
Over Current Sense resistor, Channel 1 high-side
17, 30
LO1COM,
LO2COM
Kelvin connection to source of low-side transistor (Channel 1 & 2)
18, 29
FDBKN1;FDBKN2
Feedback (Channel 1 & 2)
19
VN12
Voltage: +12 V from V
SNEG
. Refer to Application Information section.
20, 27
LO1, LO2
Low side gate drive output (Channel 1 & 2)
21, 26
HO1COM, HO2COM
Kelvin connection to source of high-side transistor (Channel 1 & 2)
22, 25
HO1, HO2
High side gate drive output (Channel 1 & 2)
23 V
SPOS
Positive supply voltage
24 V
SNEG
Negative supply voltage
28 PGND
Power
Ground
31, 32
OCS2L-, OCS2L+
Over Current Sense resistor, Channel 2 low-side
33, 34
OCS2H-, OCS2H+
Over Current Sense resistor, Channel 2 high-side
35
HMUTE
Logic output. When high, indicates that the output stages of both
amplifiers are shut off and muted.
36, 37, 38
NC
Not Connected - Must Be Left Floating
38 Pin Quad Package Pin-out
(Top View)
Figure 1
9
10
11
12
13
14
15
16
17
18
19
1
2
3
4
5
6
7
8
AGND
OVERLOADB
V5
IN2
IN1
BBM0
BBM1
MUTE
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
LO2
HO2COM
HO2
V
SNEG
V
SPOS
HO1
H01COM
LO1
G
ND KEL
VI
N1
OCR2
OCR1
G
ND KEL
VI
N2
OC
S
1L+
OC
S
1L-
OCS
1
H-
OCS
1
H+
LO1C
OM
F
D
BKN1
VN1
2
NC
NC
NC
HM
UT
E
OCS
2
H+
OCS
2
H-
OC
S
2L+
OC
S
2L-
LO2C
OM
F
D
BKN2
PG
ND
T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
5 TA0103 Rev 3.3/06.00
Test/Application Circuit
Figure
2
Processing
&
Modulation
TA0103A
MUTE
OVERLOADB
IN1
IN2
PGnd
AGnd
R
IN
R
IN
OCS1H-
HO1
HO1COM
OCS1L+
OCR1
OCR2
FDBKN1
VN12
R
S
V
SPOS
M
R
OCR1
R
OCR2
BBM0
BBM1
R
L
6
4
5
11
10
7
8
NC
36
1
28
18
OCS1H+
15
16
22
OCS1L-
14
13
20
21
LO1COM
17
9 GNDKELVIN1
HMUTE
V
SNEG
V
SPOS
19
23
24
2
NC
38
NC
37
NC - Not Connected (Must Be Left Floating)
C
IN
C
IN
Note - Heavy Lines Indicate High-Current Paths
R
G
D
C
BY
L
F
C
F
100uF
M
R
G
D
C
BY
R
S
100uF
V
SNEG
R
D
C
D
Processing
&
Modulation
OCS2H-
HO2
HO2COM
OCS2L+
R
S
V
SPOS
M
R
L
OCS2H+
33
34
25
OCS2L-
31
32
27
26
LO2COM
30
12 GNDKELVIN2
R
G
D
C
BY
L
F
C
F
100uF
M
R
G
D
C
BY
R
S
100uF
V
SNEG
R
D
C
D
LO1
35
29 FDBKN2
LO2
.1uF
.1uF
.1uF
V5
0.1 uF
3
1M
0.1 uF
1M
V5
10K
0.1 uF
1M
1M
V5
10K
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