SF5G49,SF5J49,USF5G49,USF5J49
2002-02-05
1
TOSHIBA Thyristor Silicon Planar Type
SF5G49,SF5J49,USF5G49,USF5J49
Medium Power Control Applications
Repetitive peak off-state voltage: V
DRM
= 400, 600 V
Repetitive peak reverse voltage: V
RRM
= 400, 600 V
Average on-state current: I
T (AV)
= 5 A
Gate trigger current: I
GT
= 70 A max
Maximum Ratings
Characteristics Symbol
Rating
Unit
SF5G49
USF5G49
400
Repetitive peak off-state
voltage and Repetitive
peak reverse voltage
(R
GK
= 330 W)
SF5J49
USF5J49
V
DRM
V
RRM
600
V
SF5G49
USF5G49
500
Non-repetitive peak
reverse voltage
(non-repetitive
< 5 ms,
T
j
= 0~125C,
R
GK
= 330 W)
SF5J49
USF5J49
V
RSM
720
V
Average on-state current
I
T (AV)
5 A
R.M.S on-state current
I
T (RMS)
7.8 A
Peak one cycle surge on-state current
(non-repetitive)
I
TSM
65 (50 Hz)
A
I
2
t limit value
I
2
t
20 A
2
s
Peak gate power dissipation
P
GM
0.5 W
Average gate power dissipation
P
G (AV)
0.05 W
Peak forward gate voltage
V
FGM
5 V
Peak reverse gate voltage
V
RGM
-5 V
Peak forward gate current
I
GM
200
mA
Junction temperature
T
j
-40~125 C
Storage temperature range
T
stg
-40~125 C
Note: Should be used with gate resistance as follows:
Unit: mm
JEDEC
JEITA
TOSHIBA 13-7F1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA 13-F2A
Weight: 0.28 g (typ.)
Gate
Anode
Cathode
R
GK
<
= 330 W
SF5G49,SF5J49,USF5G49,USF5J49
2002-02-05
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Repetitive peak off-state current
and Repetitive peak reverse current
I
DRM
I
RRM
V
DRM
= V
RRM
= Rated
R
GK
= 330 W
20
mA
Peak on-state voltage
V
TM
I
TM
= 12 A
1.6 V
Gate trigger voltage
V
GT
0.8 V
Gate trigger current
I
GT
V
D
= 6 V, R
L
= 100 W
R
GK
= 330 W
3
70
mA
Gate non-trigger voltage
V
GD
V
D
= Rated 2/3, Tc = 125C
0.2
V
Critical rate of rise of off-state voltage
dv/dt
V
DRM
= Rated 2/3, Tc = 75C
R
GK
= 330 W, Exponential rise
50
V/ms
Holding current
I
H
R
L
= 100 W, R
GK
= 330 W
2.5
mA
Thermal resistance (junction to case)
R
th (j-c)
DC
6.0
C/W
Marking
2
1
F5G49 SF5G49,
USF5G49
1 Mark
F5J49
Type Name
SF5J49, USF5J49
2
Lot Number
Month (starting from alphabet A)
Year (last decimal digit of the current year)
T
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nce
r
th (j-c)
(C
/
W
)
Time t (s)
Transient thermal impedance
(junction to case)
0.1
0.001
1
10
0.01 0.1 1 10
SF5G49,SF5J49,USF5G49,USF5J49
2002-02-05
3
I
H
(T
c
)
/I
H
(T
c
=
25
C
)
V
GT
(T
c
)
/V
GT
(T
c
=
25
C
)
Instantaneous on-state voltage v
T
(V)
i
T
v
T
Instantan
eo
us o
n
-
s
t
a
te c
u
r
r
e
n
t
i
T
(A
)
Number of cycles at 50 Hz and 60 Hz
Surge on-state current
(non-repetitive)
P
eak
s
u
r
ge on
-state cur
r
e
n
t
I
TSM
(A
)
Case temperature Tc (C)
I
GT
(Tc)/I
GT
(Tc
= 25C) Tc
(typ.)
I
GT
(T
c
)
/I
GT
(T
c
=
25
C
)
Case temperature Tc (C)
V
GT
(Tc)/V
GT
(Tc
= 25C) Tc
(typ.)
Case temperature Tc (C)
I
H
(Tc)/I
H
(Tc
= 25C) Tc
(typ.)
Gate to cathode resistance R
GK
(k
W)
I
H
R
GK
(typ.)
Ho
ld
in
g
c
u
r
r
e
n
t
I
H
(
m
A
)
0.1
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
1
10
100
Tj = 125C
25C
0.1
-50 0 50 100 150
1
10
VD = 6 V
RL = 100 W
RGK = 330 W
0
-60
VD = 6 V
ITM = 1 A
RGK = 330 W
-20 20 60 100 140
0.5
1.0
1.5
2.0
0.1
0.01
1
10
0.1 1 10 100
ITM = 1 A
Ta
= 25C
0
-50 0 50 100 150
0.5
1.0
1.5
2.0
VD = 6 V
RL = 100 W
RGK = 330 W
0
1 10 100
20
40
60
80
60 Hz
50
Rated load
SF5G49,SF5J49,USF5G49,USF5J49
2002-02-05
4
A
v
era
ge
on
-state
po
w
e
r
di
ssi
p
a
ti
on
P
T (
A
V
)
(W
)
Maxi
mu
m al
l
o
w
a
bl
e
cas
e
te
mp
er
atu
r
e
T
c
M
a
x
(
C)
Average on-state current I
T (AV)
(A)
P
T (AV)
I
T (AV)
A
v
era
ge
on
-state
po
w
e
r
di
ssi
p
a
ti
on
P
T (
A
V
)
(W
)
Average on-state current I
T (AV)
(A)
Tc Max I
T (AV)
Maxi
mu
m al
l
o
w
a
bl
e
cas
e
te
mp
er
atu
r
e
T
c
M
a
x
(
C)
Average on-state current I
T (AV)
(A)
P
T (AV)
I
T (AV)
A
v
era
ge
on
-state
po
w
e
r
di
ssi
p
a
ti
on
P
T (
A
V
)
(W
)
Average on-state current I
T (AV)
(A)
Tc Max I
T (AV)
Average on-state current I
T (AV)
(A)
P
T (AV)
I
T (AV)
Average on-state current I
T (AV)
(A)
Tc Max I
T (AV)
Maxi
mu
m al
l
o
w
a
bl
e
cas
e
te
mp
er
atu
r
e
T
c
M
a
x
(
C)
a = 30
0
0 1 2 3 4 5 6 7
2
4
6
8
10
60
90
120
180
Half sine waveform
180
0
Conduction angle
a
0
0 1 2 3 4 5 6 7
20
40
60
80
100
120
140
a = 30
60
90
120 180
Half sine waveform
180
0
Conduction angle
a
16
0
0 2 4 6 8 10
2
4
6
8
10
12
14
a1
Full sine waveform
360
180
Conduction angle
a = a1 + a2
0
a2
a = 60
120
180
240
360
a = 60
0
0
2
4
6
8
10
20
40
60
80
100
120
140
Full sine waveform
Conduction angle
a = a1 + a2
a1
360
180
0
a2
120 180
240 360
0
0 2 4 6 8 10
2
4
6
8
10
12
14
16
a = 30
60
90
120
180
DC
360
0
Rectangular waveform
Conduction angle
a
a = 30
0
0 2 4 6 8 10
20
40
60
80
100
120
140
60
90
120
180
DC
360
0
Rectangular waveform
Conduction angle
a
SF5G49,SF5J49,USF5G49,USF5J49
2002-02-05
5
V
BO
(T
c
)
/V
BO
(T
c
=
25
C
)
(%
)
Gate to cathode capacitance C
GK
(
mF)
dv/dt C
GK
(typ.)
C
r
i
t
i
c
al
ra
te of
ri
se of of
f-s
t
a
t
e
v
o
l
t
age
dv/dt (V
/
m
s)
Gate to cathode capacitance C
GK
(
mF)
dv/dt C
GK
(typ.)
C
r
i
t
i
c
al
ra
te of
ri
se of of
f-s
t
a
t
e
v
o
l
t
age
dv/dt (V
/
m
s)
Case temperature Tc (C)
V
BO
(Tc)/V
BO
(Tc
= 25C) Tc
(typ.)
10-
1
10-
3
10-
2
10-
1
10
0
10
0
10
1
10
2
10
3
10
4
CGK
Ta
= 75C
VD = 400 V
RGK
RGK = 100 W
330
W
1 k
W
3.3 k
W
10-
1
10-
3
10-
2
10-
1
10
0
10
0
10
1
10
2
10
3
10
4
CGK
Ta
= 100C
VD = 400 V
RGK
RGK = 100 W
330
W
1 k
W
3.3 k
W
0
-80
RGK = 100 W
330
W
1 k
W
10 k
W
-40 0 40 80 120 160 200
20
40
60
80
100
120
3.3 k
W
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