SF3G48,SF3J48,USF3G48,USF3J48
2001-07-10
1
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF3G48,SF3J48,USF3G48,USF3J48
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak Off-State Voltage : V
DRM
= 400,600V
Repetitive Peak Reverse Voltage
: V
RRM
= 400,600V
l Average On-State Current
: I
T (AV)
= 3A
l Gate Trigger Current
: I
GT
= 10mA MAX.
Unit: mm
SF3G48SF3J48 USF3G48USF3J48
JEDEC
JEDEC
JEITA
JEITA
TOSHIBA
13-10J1B
TOSHIBA
13-10J2B
Weight: 1.7g
MARKING
F3G48
SF3G48, USF3G48
*1 MARK
F3J48
TYPE
NAME
SF3J48, USF3J48
*2
SF3G48,SF3J48,USF3G48,USF3J48
2001-07-10
2
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
SF3G48
USF3G48
400
Repetitive Peak
Off-State Voltage and
Repetitive Peak
Reverse Voltage
SF3J48
USF3J48
V
DRM
V
RRM
600
V
SF3G48
USF3G48
500
Non-Repetitive Peak
Reverse Voltage
(Non-Repetitive <5ms,
T
j
= 0~125C)
SF3J48
USF3J48
V
RSM
720
V
Average On-State Current
I
T (AV)
3 A
R.M.S On-State Current
I
T (RMS)
4.7 A
50 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
55 (60Hz)
A
I
2
t Limit Value
I
2
t 12.5
A
2
s
Critical Rate of Rise of On-State
Current (Note
1)
di / dt
100
A / s
Peak Gate Power Dissipation
P
GM
5 W
Average Gate Power Dissipation
P
G (AV)
0.5 W
Peak Forward Gate Voltage
V
FGM
10 V
Peak Reverse Gate Voltage
V
RGM
-5 V
Peak Forward Gate Current
I
GM
2 A
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
Note 1: V
DRM
= 0.5 Rated
I
TM
12A
t
gw
10s
t
gr
250ns
i
gp
= I
GT
2.0
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current and
Repetitive Peak Reverse Current
I
DRM
I
RRM
V
DRM
= V
RRM
= Rated
10 A
Peak On-State Voltage
V
TM
I
TM
= 12A
1.5 V
Gate Trigger Voltage
V
GT
1.0 V
Gate Trigger Current
I
GT
V
D
= 6V, R
L
= 10
10 mA
Gate Non-Trigger Voltage
V
GD
V
D
= Rated 2 / 3, Tc = 125C
0.2
V
Critical Rate of Rise of Off-State Voltage
dv / dt
V
DRM
= Rated, Tc = 125C
Exponential Rise
50 V
/
s
Holding Current
I
H
V
D
= 6V, I
TM
= 1A
40 mA
Latching Current
I
L
V
D
= 6V, f = 50Hz
t
gw
= 50s, i
G
= 30mA
50 mA
Thermal Resistance
R
th (j-c)
Junction
to
Case,
DC
3.6
C
/
W
SF3G48,SF3J48,USF3G48,USF3J48
2001-07-10
3
SF3G48,SF3J48,USF3G48,USF3J48
2001-07-10
4
SF3G48,SF3J48,USF3G48,USF3J48
2001-07-10
5
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