URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
2001-07-11
1
EQUIVALENT CIRCUIT
TOSHIBA THYRISTOR SILICON PLANAR TYPE
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
l Repetitive Peak Off-State Voltage : V
DRM
= 400V
Repetitive Peak Reverse Voltage : V
RRM
= 400V
l Average On-State Current
: I
T (AV)
= 500mA
l Reduce a Quantity of Parts and Manufacturing
Process Because of Built-in RGK : R
GK
= 1k, 2.7k, 5.1k (Typ.)
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATINGS
UNIT
Repetitive Peak Off-State Voltage
and Repetitive Peak Reverse Voltage
V
DRM
V
RRM
400 V
Non-Repetitive Peak Reverse
Voltage (Non-Repetitive<5ms,
Tj = 0~125C)
V
RSM
500 V
Average On-State Current
(Half Sine Waveform)
I
T
(AV)
500 mA
R.M.S On-State Current
I
T
(RMS)
800 mA
9 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
10 (60Hz)
A
I
2
t Limit Value
I
2
t 0.4
A
2
s
Critical Rate of Rise of On-State
Current
(Note 1)
di / dt
10
A / s
Peak Gate Power Dissipation
P
GM
0.1 W
Average Gate Power Dissipation
P
G(AV)
0.01 W
Peak Forward Gate Voltage
V
FGM
3.5 V
Peak Reverse Gate Voltage
V
RGM
-5 V
Peak Forward Gate Current
I
GM
125 mA
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
Unit: mm
JEDEC
JEITA
TOSHIBA 13-5B1A
Weight: 0.2 g
NOTE 1: di / dt Test condition
i
G
= 5mA, t
gw
=10s,
t
gr
250ns
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
2001-07-11
2
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current and
Repetitive Peak Reverse Current
I
DRM
I
RRM
V
DRM
= V
RRM
= Rated
10 A
Peak On-State Voltage
V
TM
I
TM
= 1A
1.5 V
Gate Trigger Voltage
V
GT
0.8 V
URSF05G49-1P 250
700
1000
URSF05G49-3P
100 250 400
Gate Trigger Current
URSF05G49-5P
I
GT
V
D
= 6V, R
L
= 100
50 160 250
A
URSF05G49-1P
6
URSF05G49-3P
3
Holding Current
URSF05G49-5P
I
H
I
TM
= 500mA, V
D
= 6V
2
mA
URSF05G49-1P 700
1000
1300
URSF05G49-3P
1890 2700 3510
Resistor Between
Gate and Cathode
URSF05G49-5P
R
GK
3570 5100 6630
URSF05G49-1P
200
URSF05G49-3P
70
Critical Rate of Rise
of Off-State Voltage
URSF05G49-5P
dv / dt
V
DRM
= Rated,
Exponential Rise
40
V / s
Turn-On Time
t
gt
V
D
= Rated, i
G
= 5mA
1.5 s
Thermal Resistance
R
th
(j-a)
Junction to Ambient
70
C
/
W
Note:
Thermal Resistance Test Condition
Use 0.63030mm Alumina Plate
MARK
NUMBER TYPE
MARK
URSF05G49-1P PB
URSF05G49-3P PC
* 1
URSF05G49-5P PD
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
2001-07-11
3
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
2001-07-11
4
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
2001-07-11
5
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
2001-07-11
6
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000707EAA
RESTRICTIONS ON PRODUCT USE
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